Stacked dies and methods for forming bonded structures
In various embodiments, a method for forming a bonded structure is disclosed. The method can comprise mounting a first integrated device die to a carrier. After mounting, the first integrated device die can be thinned. The method can include providing a first layer on an exposed surface of the first integrated device die. At least a portion of the first layer can be removed. A second integrated device die can be directly bonded to the first integrated device die without an intervening adhesive.
1. A method for packaging integrated device dies, the method comprising:
directly bonding a plurality of singulated integrated device dies to a carrier such that respective bonding surfaces of the plurality of singulated integrated device dies and the carrier are in direct contact, the plurality of singulated integrated device dies comprising a first singulated device die;
after directly bonding, thinning the plurality of singulated integrated device dies;
providing a protective material on exposed surfaces of the plurality singulated integrated device dies including sidewall surfaces of the plurality of singulated integrated device dies; and
after providing the protective material, directly bonding a second singulated integrated device die to the first singulated device die.
2. The method of claim 1 , wherein providing the protective material comprises providing a conformal inorganic dielectric layer.
3. The method of claim 2 , wherein the conformal inorganic dielectric layer has a coefficient of thermal expansion that is within 15 ppm/° C. of a coefficient of thermal expansion of the first singulated integrated device.
4. The method of claim 2 , wherein the conformal inorganic dielectric layer comprises a silicon-based material.
5. The method of claim 1 , further comprising, after thinning, directly bonding a plurality of second dies to the plurality of singulated integrated device dies to form stacked dies; the plurality of second dies comprising the second singulated integrated device die.
6. The method of claim 5 , further comprising singulating the stacked dies after directly bonding the plurality of second dies over the plurality of singulated integrated device dies.
7. The method of claim 6 , further comprising providing another layer of the protective material on exposed surfaces of the plurality of second dies after directly bonding the plurality of second dies and before singulating the stacked dies.
8. The method of claim 5 , wherein the protective material comprises a first protective layer on side surfaces of the plurality of singulated integrated device dies and a second protective layer on side surfaces of the plurality of second integrated device dies, the first and second protective layers of vertically adjacent dies having an interface therebetween.
9. The method of claim 1 , wherein providing the protective material is conducted prior to thinning.
10. A method for packaging integrated device dies, the method comprising:
directly bonding a plurality of first integrated device dies to a carrier, the first integrated device dies being adjacent to one another with gaps therebetween, the first integrated device dies comprising electrical interconnects extending through at least a portion of a thickness of the first integrated device dies;
after directly bonding the first integrated device dies, providing a protective material to fill the gaps between the first integrated device dies;
exposing the electrical interconnects of the first integrated device dies; and
mounting and electrically interconnecting a plurality second integrated device dies onto the exposed electrical interconnects of the first integrated device dies.
11. The method of claim 10 , wherein mounting and electrically interconnecting the second integrated device dies onto the exposed electrical interconnects of the first integrated device dies comprises directly bonding of conductive and non-conductive surfaces of the first and second integrated device dies.
12. The method of claim 11 , further comprising:
exposing electrical interconnects of the second integrated device dies; and
mounting and electrically interconnecting a plurality of third integrated device dies onto the exposed electrical interconnects of the second integrated device dies.
13. The method of claim 11 , further comprising singulating the stacked dies after mounting and electrically connecting the second integrated device dies.
14. The method of claim 10 , wherein exposing electrical interconnects of the first integrated device dies comprises planarizing the protective material and the first integrated device dies.
15. The method of claim 10 , further comprising providing the first layer on an exposed surface of a third integrated device die, the third integrated device die positioned laterally adjacent the first integrated device die.
16. The method of claim 10 , wherein exposing the electrical interconnects of the first integrated device dies comprises forming the electrical interconnects after removing at least a portion of the protective material.
17. A bonded structure of stacked dies, comprising:
a first integrated device die, the first integrated device die comprising an upper surface opposite a lower surface and a side surface between the upper and lower surfaces of the first integrated device die;
a second integrated device die directly bonded to the upper surface of the first integrated device die without an intervening adhesive, the second integrated device die comprising an upper surface opposite a lower surface and a side surface between the upper and lower surfaces of the second integrated device die; and
a protective material disposed on the side surfaces of the first and second integrated device dies, the protective material having a continuous outer surface characteristic of singulation after forming the protective material and directly bonding the second integrated device die to the upper surface of the first integrated device die.
18. The structure of claim 17 , wherein a portion of the protective material is disposed on the upper surface of the first integrated device die between the first and second integrated device dies.
19. The structure of claim 17 , wherein a second integrated device die is directly bonded to the upper surface of the first integrated device die.
20. The structure of claim 17 , wherein the protective material has a coefficient of thermal expansion that is within 10 ppm/° C. of a coefficient of thermal expansion of the first integrated device die.
21. The structure of claim 17 , wherein the protective material comprises a first protective layer on a side surface of the first integrated device die and a second protective layer on a side surface of the second integrated device die, the first and second protective layers having an interface therebetween.
22. The structure of claim 17 , wherein the protective material comprises first conformal layers on the side surface of the first and second integrated device dies and second filler layers disposed over the first conformal layers on the side surfaces of the first and second integrated device dies.
23. A method for packaging integrated device dies, the method comprising:
directly bonding a plurality of singulated integrated device dies to a carrier such that respective bonding surfaces of the plurality of singulated integrated device dies and the carrier are in direct contact;
after directly bonding, providing a protective material on exposed surfaces of the plurality singulated integrated device dies including sidewall surfaces of the plurality of singulated integrated device dies; and
after providing the protective material, thinning the plurality of singulated integrated device dies.
24. The method claim 23 , further comprising forming interconnects through at least portions of the plurality of singulated integrated device dies.