Oxide sintered body and method for manufacturing the same, sputtering target, and semiconductor device
There is provided an oxide sintered body including indium, tungsten and zinc, wherein the oxide sintered body includes a bixbite type crystal phase as a main component and has an apparent density of higher than 6.6 g/cm 3 and equal to or lower than 7.5 g/cm 3 , a content rate of tungsten to a total of indium, tungsten and zinc in the oxide sintered body is higher than 0.5 atomic % and equal to or lower than 5.0 atomic %, a content rate of zinc to the total of indium, tungsten and zinc in the oxide sintered body is equal to or higher than 1.2 atomic % and equal to or lower than 19 atomic %, and an atomic ratio of zinc to tungsten is higher than 1.0 and lower than 60. There are also provided a sputtering target including this oxide sintered body, and a semiconductor device.
1. A method for manufacturing an oxide sintered body,
the oxide sintered body comprising indium, tungsten and zinc, wherein
the oxide sintered body includes a bixbite type crystal phase as a main component,
the oxide sintered body has an apparent density of higher than 6.6 g/cm 3 and equal to or lower than 7.5 g/cm 3 ,
a content rate of tungsten to a total of indium, tungsten and zinc in the oxide sintered body is higher than 0.5 atomic % and equal to or lower than 5.0 atomic %,
a content rate of zinc to the total of indium, tungsten and zinc in the oxide sintered body is equal to or higher than 1.2 atomic % and equal to or lower than 19 atomic %, and
an atomic ratio of zinc to tungsten is higher than 1.0 and lower than 60, and
the method comprising:
preparing a primary mixture of an indium oxide powder and a tungsten oxide powder;
forming a calcined powder by heat-treating the primary mixture;
preparing a secondary mixture of raw material powders, the secondary mixture including the calcined powder and a zinc oxide powder;
forming a molded body by molding the secondary mixture; and
forming the oxide sintered body by sintering the molded body, wherein
forming a calcined powder includes forming a complex oxide powder including indium and tungsten as the calcined powder by heat-treating the primary mixture at a temperature equal to or higher than 700° C. and lower than 1200° C. under an oxygen-containing atmosphere,
wherein the complex oxide includes at least one of a ZnWO 4 type crystal phase and an In 6 WO 12 type crystal phase.
2. A method for manufacturing an oxide sintered body,
the oxide sintered body comprising indium, tungsten and zinc, wherein
the oxide sintered body includes a bixbite type crystal phase as a main component,
the oxide sintered body has an apparent density of higher than 6.6 g/cm 3 and equal to or lower than 7.5 g/cm 3 ,
a content rate of tungsten to a total of indium, tungsten and zinc in the oxide sintered body is higher than 0.5 atomic % and equal to or lower than 5.0 atomic %,
a content rate of zinc to the total of indium, tungsten and zinc in the oxide sintered body is equal to or higher than 1.2 atomic % and equal to or lower than 19 atomic %, and
an atomic ratio of zinc to tungsten is higher than 1.0 and lower than 60, and
the method comprising:
preparing a primary mixture of a zinc oxide powder and a tungsten oxide powder;
forming a calcined powder by heat-treating the primary mixture;
preparing a secondary mixture of raw material powders, the secondary mixture including the calcined powder and an indium oxide powder;
forming a molded body by molding the secondary mixture; and
forming the oxide sintered body by sintering the molded body, wherein
forming a calcined powder includes forming a complex oxide powder including zinc and tungsten as the calcined powder by heat-treating the primary mixture at a temperature equal to or higher than 550° C. and lower than 1200° C. under an oxygen-containing atmosphere,
wherein the complex oxide includes at least one of a ZnWO 4 type crystal phase and an In 6 WO 12 type crystal phase.
3. The method for manufacturing the oxide sintered body according to claim 1 , wherein
the tungsten oxide powder includes at least one type of crystal phase selected from the group consisting of a WO 3 crystal phase, a WO 2 crystal phase and a WO 2.72 crystal phase.
4. The method for manufacturing the oxide sintered body according to claim 1 , wherein
a median particle size d50 of the tungsten oxide powder is equal to or larger than 0.1 μm and equal to or smaller than 4 μm.
5. The method for manufacturing the oxide sintered body according to claim 2 , wherein
the tungsten oxide powder includes at least one type of crystal phase selected from the group consisting of a WO 3 crystal phase, a WO 2 crystal phase and a WO 2.72 crystal phase.
6. The method for manufacturing the oxide sintered body according to claim 2 , wherein
a median particle size d50 of the tungsten oxide powder is equal to or larger than 0.1 μm and equal to or smaller than 4 μm.