Embedded chip package, manufacturing method thereof, and package-on-package structure
An embedded chip package includes a circuit board, a chip, a dielectric material layer, and a build-up circuit structure. The circuit board includes a glass substrate and at least one conductive via. The glass substrate has a first surface, a second surface opposite the first surface, and a through-hole penetrating the glass substrate. The conductive via penetrates the glass substrate. The chip is disposed inside the through-hole. The dielectric material layer is filled inside the through-hole and covers the chip. The build-up circuit structure is disposed on the circuit board. The build-up circuit structure is electrically connected to the conductive via. A lower surface of the chip is exposed outside the dielectric material layer.
1. An embedded chip package, comprising:
a circuit board, comprising:
a glass substrate having a first surface, a second surface opposite the first surface, and a through-hole penetrating the glass substrate; and
at least one conductive via penetrating the glass substrate;
a chip disposed inside the through-hole;
a dielectric material layer filled inside the through-hole and covering the chip; and
a build-up circuit structure disposed on the circuit board, wherein the build-up circuit structure is electrically connected to the conductive via, a lower surface of the chip is exposed outside the dielectric material layer, and the lower surface of the chip is an active surface.
2. The embedded chip package of claim 1 , wherein the lower surface of the chip is level with the second surface of the glass substrate.
3. The embedded chip package of claim 1 , wherein the build-up circuit structure comprises:
a first circuit layer;
a first dielectric layer covering the first circuit layer;
a second circuit layer, wherein the second circuit layer and the first circuit layer are respectively located at two opposite sides of the first dielectric layer; and
at least one first via penetrating the first dielectric layer to be electrically connected to the first circuit layer and the second circuit layer.
4. The embedded chip package of claim 1 , wherein the build-up circuit structure is disposed at the first surface of the glass substrate, and the embedded chip package further comprises:
a patterned conductive layer disposed at the second surface of the glass substrate such that the build-up circuit structure and the patterned conductive layer are respectively located at two opposite sides of the glass substrate; and
a solder ball or a copper column disposed on the patterned conductive layer such that the solder ball or the copper column and the circuit board are respectively located at two opposite sides of the patterned conductive layer.
5. The embedded chip package of claim 4 , wherein the active surface faces the patterned conductive layer and is electrically connected to the patterned conductive layer.
6. The embedded chip package of claim 4 , wherein the build-up circuit structure is electrically connected to the patterned conductive layer via the conductive via.
7. The embedded chip package of claim 1 , wherein the build-up circuit structure is disposed at the second surface of the glass substrate, and the embedded chip package further comprises:
a solder ball or a copper column disposed on the build-up circuit structure such that the solder ball or the copper column and the circuit board are respectively located at two opposite sides of the build-up circuit structure.
8. The embedded chip package of claim 7 , wherein the active surface faces the build-up circuit structure and is electrically connected to the build-up circuit structure.
9. The embedded chip package of claim 1 , wherein the through-hole is connected to the first surface and the second surface of the glass substrate.
10. A package-on-package structure, comprising:
a first circuit board;
at least one first embedded chip package disposed on the first circuit board comprises the embedded chip package of claim 4 ; and
a second embedded chip package disposed on the first embedded chip package, comprising:
a second circuit board, comprising: a second glass substrate having a third surface, a fourth surface opposite the third surface, and a second through-hole penetrating the second glass substrate; and at least one second conductive via penetrating the second glass substrate;
a second chip disposed inside the second through-hole;
a second dielectric material layer filled inside the second through-hole and covering the second chip;
a second build-up circuit structure disposed on the second circuit board, wherein the second build-up circuit structure is electrically connected to the second conductive via, a lower surface of the second chip is exposed outside the second dielectric material layer, and the second build-up circuit structure is disposed at the fourth surface of the second glass substrate; and
a second solder ball or a second copper column disposed on the second build-up circuit structure such that the second solder ball or the second copper column and the second circuit board are respectively located at two opposite sides of the second build-up circuit structure,
wherein the second embedded chip package and the first circuit board are respectively located at two opposite sides of the first embedded chip package.
11. The package-on-package structure of claim 10 , wherein the second solder ball or the second copper column of the second embedded chip package is electrically connected to the build-up circuit structure of the first embedded chip package, and the solder ball or the copper column of the first embedded chip package is electrically connected to the first circuit board.
12. A manufacturing method of an embedded chip package, comprising:
providing a carrier and a release layer disposed on the carrier;
disposing a chip on the release layer;
disposing a circuit board on the release layer, the circuit board comprising:
a glass substrate having a first surface, a second surface opposite the first surface, and a through-hole penetrating the glass substrate; and
at least one conductive via penetrating the glass substrate;
forming a dielectric material layer on the release layer after the chip and the circuit board are disposed on the release layer and the chip is embedded inside the through-hole, wherein the dielectric material layer is filled inside the through-hole and covers the chip;
removing the release layer and the carrier to expose a lower surface of the chip outside the dielectric material layer; and
forming a build-up circuit structure on the circuit board after the release layer and the carrier are removed such that the build-up circuit structure is electrically connected to the conductive via.
13. The manufacturing method of the embedded chip package of claim 12 , wherein the lower surface of the chip is level with the second surface of the glass substrate.
14. The manufacturing method of the embedded chip package of claim 12 , wherein the build-up circuit structure comprises:
a first circuit layer;
a first dielectric layer covering the first circuit layer;
a second circuit layer, wherein the second circuit layer and the first circuit layer are respectively located at two opposite sides of the first dielectric layer; and
at least one first via penetrating the first dielectric layer to be electrically connected to the first circuit layer and the second circuit layer.
15. The manufacturing method of the embedded chip package of claim 12 , wherein the build-up circuit structure is disposed at the first surface of the glass substrate, and the manufacturing method of the embedded chip package further comprises:
forming a patterned conductive layer on the second surface of the glass substrate such that the build-up circuit structure and the patterned conductive layer are respectively located at two opposite sides of the glass substrate; and
forming a solder ball or a copper column on the patterned conductive layer such that the solder ball or the copper column and the circuit board are respectively located at two opposite sides of the patterned conductive layer.
16. The manufacturing method of the embedded chip package of claim 15 , wherein the lower surface of the chip is an active surface, and the active surface faces the patterned conductive layer and is electrically connected to the patterned conductive layer.
17. The manufacturing method of the embedded chip package of claim 15 , wherein the build-up circuit structure is electrically connected to the patterned conductive layer via the conductive via.
18. The manufacturing method of the embedded chip package of claim 12 , wherein the build-up circuit structure is disposed at the second surface of the glass substrate, and the manufacturing method of the embedded chip package further comprises:
forming a solder ball or a copper column on the build-up circuit structure such that the solder ball or the copper column and the circuit board are respectively located at two opposite sides of the build-up circuit structure.
19. The manufacturing method of the embedded chip package of claim 18 , wherein the lower surface of the chip is an active surface, and the active surface faces the build-up circuit structure and is electrically connected to the build-up circuit structure.
20. The manufacturing method of the embedded chip package of claim 12 , wherein the through-hole is connected to the first surface and the second surface of the glass substrate.