Dielectric gap fill evaluation for integrated circuits
Apparatus and methods for dielectric gap fill evaluations are provided. In one example, a method can comprise providing a gap fill substrate over one or more interlayer dielectric trenches of a dielectric layer and over a first material located in the one or more interlayer dielectric trenches. The method can also comprise depositing a gap fill candidate material within one or more gap fill substrate trenches of the gap fill substrate. Furthermore, the method can comprise etching the gap fill candidate material until a void within the first material is identified. Additionally, the method can comprise filling the one or more gap fill substrate trenches with a second material to form one or more contacts with the first material to measure a leakage current of one or more pitches.
1. An apparatus comprising:
a silicon substrate;
an interlayer dielectric disposed on the silicon substrate;
a first metal within one or more first trenches of the interlayer dielectric;
a gap fill substrate disposed on the first metal and the interlayer dielectric;
a dielectric gap fill material disposed within one or more second trenches of the gap fill substrate, wherein the dielectric gap fill material within the one or more second trenches comprises a void that exposes part of the first material; and
a second metal, wherein the second metal fills the void and forms one or more contacts with the first metal.
2. The apparatus of claim 1 , wherein the first metal is a copper metal.
3. The apparatus of claim 1 , wherein the gap fill substrate is a nitride gap fill substrate.
4. The apparatus of claim 1 , wherein the dielectric gap fill material is disposed on the gap fill substrate.
5. The apparatus of claim 1 , wherein the dielectric gap fill material is disposed on the interlayer dielectric.
6. The apparatus of claim 1 , wherein the dielectric gap fill material is disposed on the first metal.
7. The apparatus of claim 1 , further comprising:
one or more pitches that comprise the gap fill substrate and the one or more second trenches of the gap fill substrate.
8. The apparatus of claim 1 , wherein the second metal forms a contact to the first metal.
9. The apparatus of claim 1 , wherein the second metal forms a contact to the first metal.
10. The apparatus of claim 1 , wherein the second metal is a copper metal.
11. The apparatus of claim 1 , wherein the dielectric gap fill material comprises an organic material.
12. The apparatus of claim 1 , wherein the dielectric gap fill material comprises an amorphous silicon film.
13. The apparatus of claim 1 , wherein the dielectric gap fill material comprises a flowable oxide.
14. The apparatus of claim 1 , wherein the dielectric gap fill material comprises a nitride.
15. The apparatus of claim 1 , wherein the dielectric gap fill material comprises carbon.
16. The apparatus of claim 1 , wherein the dielectric gap fill material comprises hydrogen.
17. The apparatus of claim 1 , wherein the dielectric gap fill material comprises oxygen.
18. The apparatus of claim 1 , wherein the dielectric gap fill material comprises silicon comprising organic material.
19. An apparatus comprising:
a silicon substrate;
an interlayer dielectric disposed on the silicon substrate;
a first metal within one or more first trenches of the interlayer dielectric;
a gap fill substrate disposed on the first metal and the interlayer dielectric;
a dielectric gap fill material disposed within one or more second trenches of the gap fill substrate, wherein the dielectric gap fill material comprises a nitride; and
a second metal, wherein the second metal forms one or more contacts with the first metal.
20. An apparatus comprising:
a silicon substrate;
an interlayer dielectric disposed on the silicon substrate;
a first metal within one or more first trenches of the interlayer dielectric;
a gap fill substrate disposed on the first metal and the interlayer dielectric;
a dielectric gap fill material disposed within one or more second trenches of the gap fill substrate, wherein the dielectric gap fill material comprises carbon; and
a second metal, wherein the second metal forms one or more contacts with the first metal.