Bonding wire for semiconductor device
The present invention provides a bonding wire for a semiconductor device suitable for cutting-edge high-density LSIs and on-vehicle LSIs by improving the formation rate of Cu—Al IMC in ball bonds. A bonding wire for a semiconductor device contains Pt of 0.1 mass % to 1.3 mass %, at least one dopant selected from a first dopant group consisting of In, Ga, and Ge, for a total of 0.05 mass % to 1.25 mass %, and a balance being made up of Cu and incidental impurities.
1. A bonding wire for a semiconductor device containing Pt of 0.1 mass % to 1.3 mass %, at least one dopant selected from a first dopant group consisting of In, Ga, and Ge, for a total of 0.05 mass % to 1.25 mass %, and a balance being made up of Cu and incidental impurities, wherein breaking elongation in a tensile test of the bonding wire is 8% to 15.5%, and the bonding wire has no coating layer.
2. The bonding wire for a semiconductor device according to claim 1 , further containing at least one dopant selected from a second dopant group of B, P, Ca, La, and Ce, for a total of 0.0005 mass % to 0.0100 mass %.
3. The bonding wire for a semiconductor device according to claim 1 , wherein a crystal orientation in a longitudinal section of the bonding wire is such that an abundance ratio of a crystal orientation <100> having an angular difference of 15 degrees or less from a longitudinal direction of the bonding wire is from 50% to 100% in area percentage.
4. The bonding wire for a semiconductor device according to claim 1 , further containing at least one element selected from a third dopant group of Au, Pd, and Ni, for a total of 0.0005 mass % to 1.0 mass %.