Complementary transistor and semiconductor device
A complementary transistor is constituted of a first transistor TR 1 and a second transistor TR 2 , active regions 32, 42 of the respective transistors are formed by layering first A layers 33, 43 and the first B layers 35, 45 respectively, surface regions 20 1 , 20 2 provided in a base correspond to first A layers 33, 43 respectively, first B layers 35, 45 each have a conductivity type different from that of the first A layers 33, 43 , and extension layers 36, 46 of the first B layer are provided on insulation regions 21 1 ,21 2 respectively.
1. A complementary transistor comprising:
a first transistor including:
a first control electrode;
a first active region located below the first control electrode and formed by layering a first A layer and a first B layer;
a first insulation layer provided between the first control electrode and the first active region;
a first A extension layer extending from one end of the first active region and constituted of the first A layer;
a first B extension layer extending from the other end of the first active region and constituted of the first B layer; and
a second transistor including:
a second control electrode;
a second active region located below the second control electrode and formed by layering a second A layer and a second B layer;
a second insulation layer provided between the second control electrode and the second active region;
a second A extension layer extending from one end of the second active region and constituted of the second A layer; and
a second B extension layer extending from the other end of the second active region and constituted of the second B layer,
wherein
a first surface region provided in a base and having a first conductivity type corresponds to the first A layer and the first A extension layer,
the first B layer has a property as a second conductivity type different from the first conductivity type,
the first B extension layer is provided on a first insulation region provided in the base,
a second surface region provided in the base and having the second conductivity type corresponds to the second A layer and the second A extension layer,
the second B layer has a property as the first conductivity type, and
the second B extension layer is provided on a second insulation region provided in the base.
2. The complementary transistor according to claim 1 , wherein
the first B layer is constituted of a two-dimensional material or graphene, and
the second B layer is constituted of a two-dimensional material or graphene.
3. The complementary transistor according to claim 2 , wherein the two-dimensional material includes one kind of two-dimensional material selected from a group consisting of MoS 2 , MoSe 2 , MoTe 2 , WS 2 , WSe 2 , WTe 2 , ZrS 2 , ZrSe 2 , ZrTe 2 , HfS 2 , HfSe 2 and HfTe 2 .
4. The complementary transistor according to claim 1 , wherein
the base is constituted of a semiconductor substrate, and
the first insulation region and the second insulation region are each constituted of an element isolation region provided in the semiconductor substrate.
5. The complementary transistor according to claim 1 , wherein the base is constituted of a two-dimensional material layer.
6. The complementary transistor according to claim 1 , wherein
the base is constituted of silicon or germanium,
the first B layer is constituted of MoS 2 , WTe 2 , or graphene, and
the second B layer is constituted of HfTe 2 .
7. The complementary transistor according to claim 1 , wherein
the base is constituted of MoS 2 ,
the first B layer is constituted of WTe 2 , and
the second B layer is constituted of ZrS 2 , HfS 2 , or HfSe 2 .
8. The complementary transistor according to claim 1 , wherein
a portion of the base constituting the first surface region and a portion of the base constituting the second surface region are constituted of different materials, and
the first B layer and the first B extension layer, and the second B layer and the second B extension layer are constituted of the same material.
9. The complementary transistor according to claim 8 , wherein
a difference between a value of a valence band of the portion of the base constituting the first surface region and a value of a conduction band of a material constituting the first B layer and the first B extension layer is 1 eV or less, and
a difference between a value of a conduction band of the portion of the base constituting the second surface region and a value of a valence band of a material constituting the second B layer and the second B extension layer is 1 eV or less.
10. The complementary transistor according to claim 8 , wherein
the portion of the base constituting the first surface region is constituted of a silicon semiconductor substrate,
the portion of the base constituting the second surface region is constituted of a semiconductor layer formed in the silicon semiconductor substrate, and
the first B layer and the first B extension layer, and the second B layer and the second B extension layer are constituted of the same two-dimensional material.
11. The complementary transistor according to claim 8 , wherein
the portion of the base constituting the first surface region is constituted of a semiconductor layer formed in a silicon semiconductor substrate,
the portion of the base constituting the second surface region is constituted of the silicon semiconductor substrate, and
the first B layer and the first B extension layer, and the second B layer and the second B extension layer are constituted of the same two-dimensional material.
12. The complementary transistor according to claim 8 , wherein
the portion of the base constituting the first surface region is constituted of a first semiconductor layer formed in the semiconductor substrate,
the portion of the base constituting the second surface region is constituted of a second semiconductor layer formed in the semiconductor substrate, and
the first B layer and the first B extension layer, and the second B layer and the second B extension layer are constituted of the same two-dimensional material.
13. The complementary transistor according to claim 1 , wherein
the portion of the base constituting the first surface region and the portion of the base constituting the second surface region are constituted of different materials, and
the first B layer and the first B extension layer, and the second B layer and the second B extension layer are constituted of different materials.
14. The complementary transistor according to claim 1 , wherein
an absolute value of a difference between an energy value at a lower end of a conduction band of the base and an energy value at a lower end of a conduction band of the first B layer is equal to or less than an energy difference at which driving can be performed at drive voltage of the first transistor,
an absolute value of a difference between an energy value at an upper end of a valence band of the base and an energy value at an upper end of a valence band of the first B layer is equal to or less than the energy difference at which driving can be performed at the drive voltage of the first transistor,
an absolute value of a difference between an energy value at the lower end of the conduction band of the base and an energy value at a lower end of a conduction band of the second B layer is equal to or less than an energy difference at which driving can be performed at drive voltage of the second transistor, and
an absolute value of a difference between an energy value at the upper end of the valence band of the base and an energy value at an upper end of a valence band of the second B layer is equal to or less than the energy difference at which driving can be performed at the drive voltage of the second transistor.
15. The complementary transistor according to claim 1 , wherein
a first interlayer insulation film is formed between the first A layer and the first B layer, and
a second interlayer insulation film is formed between the second A layer and the second B layer.
16. A semiconductor device comprising:
the complementary transistor according to claim 1 and having a base constituted of a silicon semiconductor substrate; and
a field effect transistor formed in the silicon semiconductor substrate.
17. A complementary transistor comprising:
a first transistor including:
a first control electrode;
a first active region located below the first control electrode;
a first insulation layer provided between the first control electrode and the first active region;
a first A extension region extending from one end of the first active region; and
a first B extension region extending from the other end of the first active region; and
a second transistor including:
a second control electrode;
a second active region located below the second control electrode;
a second insulation layer provided between the second control electrode and the second active region;
a second A extension region extending from one end of the second active region; and
a second B extension region extending from the other end of the second active region,
wherein
a first surface region provided in a base and having a first conductivity type corresponds to the first A extension region,
the first B extension region has a property as a second conductivity type different from the first conductivity type and is provided on a first insulation region provided in the base,
the first active region is provided on the first insulation region,
a second surface region provided in the base and having the second conductivity type corresponds to the second A extension region,
the second B extension region has a property as the first conductivity type and is provided on a second insulation region provided in the base, and
the second active region is provided on the second insulation region.
18. The complementary transistor according to claim 17 , wherein
the first B extension region is constituted of a two-dimensional material or graphene, and
the second B extension region is constituted of a two-dimensional material or graphene.
19. The complementary transistor according to claim 18 , wherein the two-dimensional material includes one kind of two-dimensional material selected from a group consisting of MoS 2 , MoSe 2 , MoTe 2 , WS 2 , WSe 2 , WTe 2 , ZrS 2 , ZrSe 2 , ZrTe 2 , HfS 2 , HfSe 2 and HfTe 2 .
20. The complementary transistor according to claim 17 , wherein
the base is constituted of a semiconductor substrate, and
the first insulation region and the second insulation region are each constituted of an element isolation region provided in the semiconductor substrate.
21. The complementary transistor according to claim 17 , wherein the base is constituted of a two-dimensional material layer.
22. The complementary transistor according to claim 17 , wherein
the base is constituted of silicon or germanium,
the first B extension region is constituted of MoS 2 , WTe 2 , or graphene, and
the second B extension region is constituted of HfTe 2 .
23. The complementary transistor according to claim 17 , wherein
the base is constituted of MoS 2 ,
the first B extension region is constituted of WTe 2 , and
the second B extension region is constituted of ZrS 2 , HfS 2 , or HfSe 2 .
24. The complementary transistor according to claim 17 , wherein
the first A extension region and the second A extension region are constituted of different materials, and
the first B extension region and the second B extension region are constituted of the same material.
25. The complementary transistor according to claim 24 , wherein
a difference between a value of a valence band of a material constituting the first A extension region and a value of a conduction band of a material constituting the first B extension region is 1 eV or less, and
a difference between a value of a conduction band of a material constituting the second A extension region and a value of a valence band of a material constituting the second B extension region is 1 eV or less.
26. The complementary transistor according to claim 24 , wherein
the first A extension region is constituted of a silicon semiconductor substrate,
the second A extension region is constituted of a semiconductor layer formed in the silicon semiconductor substrate, and
the first B extension region and the second B extension region are constituted of the same two-dimensional material.
27. The complementary transistor according to claim 24 , wherein
the first A extension region is constituted of a semiconductor layer formed in the silicon semiconductor substrate,
the second A extension region is constituted of the silicon semiconductor substrate, and
the first B extension region and the second B extension region are constituted of the same two-dimensional material.
28. The complementary transistor according to claim 24 , wherein
the first A extension region is constituted of a first semiconductor layer formed in the semiconductor substrate,
the second A extension region is constituted of a second semiconductor layer formed in the semiconductor substrate, and
the first B extension region and the second B extension region are constituted of the same two-dimensional material.
29. The complementary transistor according to claim 17 , wherein
the first A extension region and the second A extension region are constituted of different materials, and
the first B extension region and the second B extension region are constituted of different materials.
30. The complementary transistor according to claim 17 , wherein
an absolute value of a difference between an energy value at a lower end of a conduction band of the base and an energy value at a lower end of a conduction band of the first B extension region is equal to or less than an energy difference at which driving can be performed at drive voltage of the first transistor,
an absolute value of a difference between an energy value at an upper end of a valence band of the base and an energy value at an upper end of a valence band of the first B extension region is equal to or less than the energy difference at which driving can be performed at the drive voltage of the first transistor,
an absolute value of a difference between an energy value at the lower end of the conduction band of the base and an energy value at a lower end of a conduction band of the second B extension region is equal to or less than an energy difference at which driving can be performed at drive voltage of the second transistor, and
an absolute value of a difference between an energy value at the upper end of the valence band of the base and an energy value at an upper end of a valence band of the second B extension region is equal to or less than the energy difference at which driving can be performed at the drive voltage of the second transistor.
31. A semiconductor device comprising:
the complementary transistor according to claim 17 and having a base constituted of a silicon semiconductor substrate; and
a field effect transistor formed in the silicon semiconductor substrate.