Complementary transistor and semiconductor device
A complementary transistor is constituted of a first transistor TR 1 and a second transistor TR 2 , active regions 32, 42 of the respective transistors are formed by layering first A layers 33, 43 and the first B layers 35, 45 respectively, surface regions 20 1 , 20 2 provided in a base correspond to first A layers 33, 43 respectively, first B layers 35, 45 each have a conductivity type different from that of the first A layers 33, 43 , and extension layers 36, 46 of the first B layer are provided on insulation regions 21 1 , 21 2 respectively.
1 . A complementary transistor, comprising:
a first transistor including:
a first control electrode; and
a first active region located below the first control electrode and formed by layering a first A layer and a first B layer; and
a second transistor including:
a second control electrode; and
a second active region located below the second control electrode formed by layering a second A layer and a second B layer,
wherein the first B layer is constituted of a two-dimensional material or graphene, and the second B layer is constituted of a two-dimensional material or graphene.
2 . The complementary transistor according to claim 1 , wherein the two-dimensional material includes one kind of two-dimensional material selected from a group consisting of MoS2, MoSe2, MoTe2, WS2, WSe2, WTe2, ZrS2, ZrSe2, ZrTe2, HfS2, HfSe2 and HfTe2.
3 . The complementary transistor according to claim 1 , wherein a first surface region is provided in a base and has a first conductivity type corresponding to the first A layer and the first B layer has a property as a second conductivity type different from the first conductivity type.
4 . The complementary transistor according to claim 3 , wherein a second surface region is provided in the base and has the second conductivity type corresponding to the second A layer and the second B layer has a property as the first conductivity type.
5 . The complementary transistor according to claim 3 , wherein the base is constituted of a semiconductor substrate.
6 . The complementary transistor according to claim 5 , wherein the base is constituted of a two-dimensional material layer.
7 . The complementary transistor according to claim 3 , wherein the base is constituted of silicon or germanium, the first B layer is constituted of MoS2, WTe2 or graphene and the second B layer is constituted of HfTe2.
8 . The complementary transistor according to claim 3 , wherein the base is constituted of MoS2, the first B layer is constituted of WTe2, and the second B layer is constituted of ZrS2, HfS2 or HfSe2.
9 . The complementary transistor according to claim 4 , wherein
a portion of the base constituting the first surface region and a portion of the base constituting the second surface region are constituted of different materials, and
the first B layer and the second B layer are constituted of the same material.
10 . The complementary transistor according to claim 9 , wherein
the portion of the base constituting the first surface region is constituted of a silicon semiconductor substrate,
the portion of the base constituting the second surface region is constituted of a semiconductor layer formed in the silicon semiconductor substrate, and
the first B layer and the second B layer are constituted of the same two-dimensional material.
11 . The complementary transistor according to claim 9 , wherein
the portion of the base constituting the first surface region is constituted of a semiconductor layer formed in a silicon semiconductor substrate,
the portion of the base constituting the second surface region is constituted of the silicon semiconductor substrate, and
the first B layer and the second B layer are constituted of the same two-dimensional material.
12 . The complementary transistor according to claim 9 , wherein
the portion of the base constituting the first surface region is constituted of a first semiconductor layer formed in a semiconductor substrate,
the portion of the base constituting the second surface region is constituted of a second semiconductor layer formed in the semiconductor substrate, and
the first B layer and the second B layer are constituted of the same two-dimensional material.
13 . The complementary transistor according to claim 9 , wherein
the portion of the base constituting the first surface region and the portion of the base constituting the second surface region are constituted of different materials, and
the first B layer and the second B layer are constituted of different materials.
14 . The complementary transistor according to claim 1 , wherein
a first interlayer insulation film is formed between the first A layer and the first B layer, and
a second interlayer insulation film is formed between the second A layer and the second B layer.
15 . A complementary transistor, comprising:
a semiconductor substrate;
a first transistor including:
a first control electrode; and
a first active region located below the first control electrode and formed by layering a first A layer and a first B layer; and
a second transistor including:
a second control electrode; and
a second active region located below the second control electrode formed by layering a second A layer and a second B layer,
wherein the first B layer is constituted of a two-dimensional material or graphene, and the second B layer is constituted of a two-dimensional material or graphene.
16 . The complementary transistor according to claim 15 , further comprising a buffer layer provided between the first control electrode and the semiconductor substrate.
17 . The complementary transistor according to claim 16 , wherein the buffer layer includes a material selected from the group consisting of InP, InAlAs, InGaAs, GaAs, and GaSb.
18 . The complementary transistor according to claim 15 , wherein the two-dimensional material includes one kind of two-dimensional material selected from a group consisting of MoS2, MoSe2, MoTe2, WS2, WSe2, WTe2, ZrS2, ZrSe2, ZrTe2, HfS2, HfSe2 and HfTe2.
19 . A complementary transistor, comprising:
a semiconductor substrate;
a first transistor including:
a first control electrode; and
a first active region located below the first control electrode and formed by layering a first A layer and a first B layer;
a second transistor including:
a second control electrode; and
a second active region located below the second control electrode formed by layering a second A layer and a second B layer; and
a buffer layer provided between the first control electrode and the semiconductor substrate.
20 . The complementary transistor according to claim 19 , wherein the buffer layer includes a material selected from the group consisting of InP, InAlAs, InGaAs, GaAs, and GaSb.