Complementary transistor and semiconductor device
A complementary transistor is constituted of a first transistor TR 1 and a second transistor TR 2 , active regions 32, 42 of the respective transistors are formed by layering first A layers 33, 43 and the first B layers 35, 45 respectively, surface regions 20 1 , 20 2 provided in a base correspond to first A layers 33, 43 respectively, first B layers 35, 45 each have a conductivity type different from that of the first A layers 33, 43 , and extension layers 36, 46 of the first B layer are provided on insulation regions 21 1 ,21 2 respectively.
1. A complementary transistor, comprising:
a semiconductor substrate;
a first transistor including:
a first control electrode;
a first active region located below the first control electrode;
a first A extension region extending from one end of the first active region;
a first B extension region extending from the other end of the first active region; and
a buffer layer provided between the first control electrode and the semiconductor substrate; and
a second transistor including:
a second control electrode;
a second active region located below the second control electrode;
a second A extension region extending from one end of the second active region; and
a second B extension region extending from the other end of the second active region.
2. The complementary transistor according to claim 1 , wherein the buffer layer includes a material selected from a group consisting of InP, InAlAs, InGaAs, GaAs, and GaSb.
3. The complementary transistor according to claim 1 , wherein
the first A extension region and the second A extension region are constituted of different materials, and
the first B extension region and the second B extension region are constituted of a same material.
4. The complementary transistor according to claim 1 , wherein
the first A extension region and the second A extension region are constituted of different materials, and
the first B extension region and the second B extension region are constituted of different materials.
5. The complementary transistor according to claim 1 , wherein
the first B extension region is constituted of a two-dimensional material or graphene, and
the second B extension region is constituted of a two-dimensional material or graphene.
6. The complementary transistor according to claim 5 , wherein the two-dimensional material includes one kind of two-dimensional material selected from a group consisting of MoS2, MoSe2, MoTe2, WS2, WSe2, WTe2, ZrS2, ZrSe2, ZrTe2, HfS2, HfSe2 and HfTe2.
7. The complementary transistor according to claim 1 , wherein
the first A extension region has a first conductivity type,
the first B extension region has a second conductivity type different from the first conductivity type,
the second A extension region has the second conductivity type, and
the second B extension region has the first conductivity type.
8. The complementary transistor according to claim 1 , further comprising:
a first A electrode connected to the first A extension region,
a first B electrode connected to the first B extension region,
a second A electrode connected to the second A extension region, and
a second B electrode connected to the second B extension region.
9. The complementary transistor according to claim 1 , further comprising a first element isolation region provided between the semiconductor substrate and the first B extension region and a second element isolation region provided between the semiconductor substrate and the second B extension region.
10. The complementary transistor according to claim 9 , wherein the first and second element isolation regions include SiO2.
11. The complementary transistor according to claim 1 , further comprising a first insulating layer provided between the first control electrode and the first active region and a second insulating layer provided between the second control electrode and the second active region.
12. The complementary transistor according to claim 11 , wherein the first and second insulating layers include HfO2.
13. The complementary transistor according to claim 1 , wherein the first active region includes a first A layer and a first B layer and the second active region includes a second A layer and a second B layer.
14. The complementary transistor according to claim 13 , further comprising:
a first interlayer insulation film formed between the first A layer and the first B layer, and
a second interlayer insulation film formed between the second A layer and the second B layer.
15. A complementary transistor, comprising:
a semiconductor substrate;
a first transistor including:
a first control electrode;
a first boundary region located below the first control electrode and formed by a first B layer;
a first A extension layer extending from one end of the first boundary region;
a first B extension layer of the first B layer extending from the other end of the first boundary region;
a second transistor including:
a second control electrode;
a second boundary region located below the second control electrode and formed by
a second B layer;
a second A extension layer extending from one end of the second boundary region; and
a second B extension layer of the second B layer extending from the other end of the second boundary region;
a first element isolation region provided between the semiconductor substrate and the first boundary region,
wherein the first element isolation region is provided under the first B layer and the first B extension layer; and
a second element isolation region provided between the semiconductor substrate and the second boundary region,
wherein the second element isolation region is provided under the second B layer and the second B extension layer.
16. The complementary transistor according to claim 15 , wherein
the first A extension layer and the second A extension layer are constituted of different materials, and
the first B extension layer and the second B extension layer are constituted of a same material.
17. The complementary transistor according to claim 15 , wherein
the first B extension layer is constituted of a two-dimensional material or graphene, and
the second B extension layer is constituted of a two-dimensional material or graphene.
18. A complementary transistor, comprising:
a semiconductor substrate;
a first transistor including:
a first control electrode;
a first boundary region located below the first control electrode and formed by a first
B layer;
a first A extension layer extending from one end of the first boundary region;
a first B extension layer of the first B layer extending from the other end of the first boundary region;
a second transistor including:
a second control electrode;
a second boundary region located below the second control electrode and formed by a second B layer;
a second A extension layer extending from one end of the second boundary region; and
a second B extension layer of the second B layer extending from the other end of the second boundary region;
a first element isolation region provided within the semiconductor substrate, wherein the first element isolation region is provided under the first B layer and the first B extension layer; and
a second element isolation region provided within the semiconductor substrate,
wherein the second element isolation region is provided under the second B layer and the second B extension layer.
19. The complementary transistor according to claim 18 , wherein
the first A extension layer and the second A extension layer are constituted of different materials, and
the first B extension layer and the second B extension layer are constituted of a same material.
20. The complementary transistor according to claim 18 , wherein
the first B extension layer is constituted of a two-dimensional material or graphene, and
the second B extension layer is constituted of a two-dimensional material or graphene.