SiC epitaxial wafer containing large pit defects with a surface density of 0.5 defects/CM2 or less, and production method therefor
A SiC epitaxial wafer in which a SiC epitaxial layer is formed on a 4H—SiC single crystal substrate having an off angle and a substrate carbon inclusion density of 0.1 to 6.0 inclusions/cm 2 , and wherein a density of large pit defects caused by substrate carbon inclusions and contained in the SiC epitaxial layer is 0.5 defects/cm 2 or less.
1. A SiC epitaxial wafer comprising a SiC epitaxial layer formed on a 4H-SiC single crystal substrate,
wherein the 4H-SiC single crystal substrate has an off angle and a substrate carbon inclusion density of 0.1 to 6.0 inclusions/cm 2 ,
wherein a density of large pit defects caused by substrate carbon inclusions and contained in the SiC epitaxial layer is 0.01 defects/cm 2 or more and 0.5 defects/cm 2 or less,
wherein the large pit defect is a pit located on the surface at a position corresponding to the position of the carbon inclusion on the substrate surface,
wherein the substrate carbon inclusions in the 4H-SiC single crystal substrate are inclusions generated by incorporating a lump of carbon that came flying in a course of crystal formation into an ingot, and
a size of the large pit defect is 100 μm 2 or more and 500 μm 2 or less.
2. A method for producing a SiC epitaxial wafer in which a SiC epitaxial layer is formed on a 4H—SiC single crystal substrate, the method comprising
a 4H—SiC single crystal substrate preparing step of preparing a 4H—SiC single crystal substrate having an off angle and a substrate carbon inclusion density of 0.1 to 6.0 inclusions/cm 2 by obtaining a confocal microscope image of a surface of the 4H—SiC single crystal substrate and identifying positions and a number of carbon inclusions on the surface;
an epitaxial growth step of growing an epitaxial layer on the SiC single crystal substrate, and
a step of selecting a SiC epitaxial wafer which has a density of large pit defects of 0.01 defects/cm 2 or more and 0.5 defects/cm 2 or less caused by substrate carbon inclusions and contained in the SiC epitaxial layer,
wherein the substrate carbon inclusions in the 4H—SiC single crystal substrate are inclusions generated by incorporating a lump of carbon that came flying in a course of crystal formation into an ingot,
wherein, in the epitaxial growth step, a conversion rate from the substrate carbon inclusions to the large pit defects caused by the substrate carbon inclusions is controlled to be 16% or less by the C/Si ratio and a thickness of the SiC epitaxial layer,
wherein, in the epitaxial growth step, a growth rate is set from 5 to 100 μm/hour, a growth temperature is set to 1,500° C. or higher, and a C/Si ratio is set to 1.25 or less, and
wherein the large pit defect is a pit located on the surface at a position corresponding to the position of the carbon inclusion on the substrate surface and a size of the large pit defect is 100 μm 2 or more and 500 μm 2 or less.
3. The method for producing a SiC epitaxial wafer according to claim 2 , wherein the C/Si ratio is set to 1.10 or less.
4. The method for producing a SiC epitaxial wafer according to claim 2 , wherein the growth rate is set from 40 to 100 μm/hour.
5. The method for producing a SiC epitaxial wafer according to claim 2 , wherein the growth rate is set from 60 to 100 μm/hour.
6. The SiC epitaxial wafer according to claim 1 , wherein the substrate carbon inclusion density is 0.28 to 6.0 inclusions/cm 2 .
7. The method for producing a SiC epitaxial wafer according to claim 2 , wherein the substrate carbon inclusion density is 0.28 to 6.0 inclusions/cm 2 .