Multi-semiconductor solid state power controllers and method for managing inductive switching transients thereof

1. A direct current solid state power controller system comprising:

a plurality of switching devices connected in parallel for performing switching;

one or more main transient voltage suppressors connected in parallel to the plurality of switching devices and configured to perform voltage clamping;

a plurality of parasitic inductances, each connected in series with a switching device of the plurality of switching devices; and

a plurality of local transient voltage suppressors, each connected in parallel with a switching device of the plurality of switching devices and configured to dissipate energy stored within at least one parasitic inductance of the plurality of parasitic inductances,

wherein the plurality of local transient voltage suppressors have a minimum breakdown voltage greater than a maximum combined clamp voltage of the one or more main transient voltage suppressors.

2. The system of claim 1 , further comprising:

a voltage source for supplying power to the solid state power controller system;

a load arranged to receive the power; and

a flywheel diode arranged to recirculate load current to the load.

3. The system of claim 1 , further comprising:

a main transient voltage suppressor inductor connected in series with the one or more of main transient voltage suppressors wherein the one or more main transient voltage suppressors are configured to dissipate energy from the main transient voltage suppressor inductor.

4. The system of claim 3 , wherein the plurality of local transient voltage suppressors have a minimum breakdown voltage less than a minimum breakdown voltage of the plurality of switching devices.

5. The system of claim 4 , further comprising a plurality of bias resistors connected to each switching device, wherein each local transient voltage suppressors is connected in series with a bias resistor of the plurality of bias resistors, to dissipate energy of the at least one parasitic inductance.

6. The system of claim 5 , wherein a plurality of switching devices comprising a plurality of metal-oxide semiconductor field effect transistors, wherein the bias resistors are each connected to a gate of a metal-oxide semiconductor field effect transistor of the plurality of metal-oxide semiconductor field effect transistor.

7. A bi-directional alternating current solid state power controller system, comprising:

a plurality of pairs of switching devices, each pair is connected in parallel for performing switching;

one or more main transient voltage suppressors connected in parallel to the plurality of pairs of switching devices and configure to perform voltage clamping;

a plurality of parasitic inductances each connected in series with a switching device of the plurality of pairs of switching devices; and

a plurality of local transient voltage suppressors, each connected in parallel a switching device of the plurality of switching devices, and configured to dissipate energy stored within at least one parasitic inductance of the plurality of parasitic inductances,

wherein the plurality of local transient voltage suppressors have a minimum breakdown voltage greater than a maximum combined clamp voltage of the one or more main transient voltage suppressors.

8. The system of claim 7 , further comprising:

a voltage source for supplying power to the solid state power controller system;

a load arranged to receive the power; and

a pair of flywheel diodes each respectively connected to the voltage source and to the load, and arranged to recirculate load current to the load.

9. The system of claim 8 , further comprising:

a main transient voltage suppressor inductor connected in series with one or more main transient voltage suppressors, wherein the one or more main transient voltage suppressors are configured to dissipate energy from the main transient voltage suppressor inductor.

10. The system of claim 9 , wherein the combined clamp voltage of the one or more transient voltage suppressors is less than a minimum breakdown voltage of the plurality of switching devices.

11. The system of claim 9 , further comprising a plurality of bias resistors connected to each switching device, wherein each local transient voltage suppressor is connected in series with a bias resistor of the plurality of bias resistors, to dissipate energy of the at least one parasitic inductance.

12. The system of claim 11 , wherein plurality of switching devices comprising a plurality of metal-oxide semiconductor field effect transistors, wherein the bias resistors are each connected to a gate of a metal-oxide semiconductor field effect transistor of the plurality of metal-oxide semiconductor field effect transistors.

13. A method for managing transients in a direct current solid state power controller, the method comprising:

performing switching with a plurality of switching devices connected in parallel;

performing voltage clamping using one or more main transient voltage suppressors connected in parallel to the plurality of switching devices;

connecting at least one parasitic inductance of a plurality of parasitic inductances in series with a switching device of the plurality of switching devices; and

connecting a local transient voltage suppressor in parallel with a switching device of the plurality of switching devices, and dissipating energy stored within the at least one parasitic inductance of the plurality of parasitic inductances,

wherein the local transient voltage suppressor has a minimum breakdown voltage greater than a maximum combined clamp voltage of the one or more main transient voltage suppressors.