Inorganic TFEL display element and manufacturing
A method for manufacturing an inorganic thin film electroluminescent display element comprises forming a layer structure, said forming the layer structure comprising forming a first dielectric layer ( 11 ); forming a luminescent layer ( 12 ), comprising manganese doped zinc sulfide ZnS:Mn, on the first dielectric layer, and forming a second dielectric layer ( 13 ) on the luminescent layer. Each of the first and the second dielectric layers are formed so as to comprise nanolaminate with alternating aluminum oxide Al 2 O 3 and zirconium oxide ZrO 2 sub-layers.
1. An inorganic thin film electroluminescent display element, comprising a layer structure comprising:
a first dielectric layer,
a luminescent layer, comprising manganese doped zinc sulfide ZnS:Mn, on the first dielectric layer, and
a second dielectric layer on the luminescent layer,
wherein each of the first and the second dielectric layers comprises nanolaminate with alternating aluminum oxide Al 2 O 3 and zirconium oxide ZrO 2 sub-layers,
wherein zirconium content of the first dielectric layer and/or the second dielectric layer is at least 10% by mass, and
wherein, in the first dielectric layer and/or the second dielectric layer where the zirconium content is at least 10%, aluminum content is at least 5% by mass.
2. The inorganic thin film electroluminescent display element as defined in claim 1 , wherein the luminescent layer is formed by atomic layer deposition using maximum process temperature in the range of 150 to 270° C.
3. The inorganic thin film electroluminescent display element as defined in claim 2 , wherein the luminescent layer is formed using diethylzinc, hydrogen sulfide, and Mn(thd)3 as precursors.
4. The inorganic thin film electroluminescent display element as defined in claim 1 , wherein the layer structure is formed on a glass substrate having a thickness of less than or equal to 250 μm.
5. The inorganic thin film electroluminescent display element as defined in claim 1 , wherein a ZrO 2 sub-layer has a thickness in the range of 1 to 9 nm.
6. The inorganic thin film electroluminescent display element as defined in claim 1 , wherein an Al 2 O 3 sub-layer has a thickness in the range of 1 to 15 nm.
7. The inorganic thin film electroluminescent display element as defined in claim 1 , wherein the electroluminescent display element is transparent.
8. The inorganic thin film electroluminescent display element as defined in claim 1 , wherein the first and the second dielectric layers are formed by atomic layer deposition.
9. The inorganic thin film electroluminescent display element as defined in claim 1 , wherein the luminescent layer is formed by atomic layer deposition using maximum process temperature in the range of 200 to 270° C.
10. The inorganic thin film electroluminescent display element as defined in claim 1 , wherein the luminescent layer is formed by atomic layer deposition using maximum process temperature in the range of 225 to 260° C.
11. The inorganic thin film electroluminescent display element as defined in claim 1 , wherein the luminescent layer is formed by atomic layer deposition using maximum process temperature is 250° C.
12. The inorganic thin film electroluminescent display element as defined in claim 1 , wherein the layer structure is formed on a glass substrate having a thickness of less than or equal to 100 μm.
13. The inorganic thin film electroluminescent display element as defined in claim 1 , wherein a ZrO 2 sub-layer has a thickness in the range of 3 to 7 nm.
14. The inorganic thin film electroluminescent display element as defined in claim 1 , wherein a ZrO 2 sub-layer has a thickness in the range of 4 to 6 nm.
15. The inorganic thin film electroluminescent display element as defined in claim 1 , wherein an Al 2 O 3 sub-layer has a thickness in the range of 3 to 10 nm.
16. The inorganic thin film electroluminescent display element as defined in claim 1 , wherein an Al 2 O 3 sub-layer has a thickness in the range of 5 to 10 nm.