Granted Patent B2

US 12,273,967 · App. 17/995,826 · Granted Apr 8, 2025

Inventors: Jani Holopainen (Espoo, FI); Kari Härkönen (Espoo, FI)

Assignee: Lumineq Oy

H05B33/145C23C16/306H05B33/10C23C16/45525

Abstract

Claims (34)

1. A display element comprising:

a first insulator layer;

a second insulator layer; and

a first phosphor layer of activator-group 4 element codoped zinc sulfide, ZnS:X,Y, between the first insulator layer and the second insulator layer;

wherein the first phosphor layer has an average atomic percentage of group 4 elements, at-% ave Y , of at least 0.01 atomic percent, at-%;

wherein at least one of europium, Eu; manganese, Mn; samarium, Sm; and terbium, Tb, is used as an activator, X, in the first phosphor layer; and

wherein at least one of titanium, Ti; zirconium, Zr; hafnium, Hf; and rutherfordium, Rf, is used as a group 4 element dopant, Y, in the first phosphor layer.

2. The display element according to claim 1 , wherein the first phosphor layer has an average atomic percentage of group 4 elements, at-% Y ave , of at least 0.01 at-%, or at least 0.02 at-%, or at least 0.03 at-%, or at least 0.04 at-%, or at least 0.05 at-% and/or at most 0.15 at-%, or at most 0.3 at-%, or at most 0.5 at-%, or at most 1 at-%, or at most 2 at-%.

3. The display element according to claim 1 , wherein the first phosphor layer has an average atomic percentage of activators, at-% X ave , of at least 0.05 at-% or at least 0.1 at-% and/or at most 1.5 at-% or at most 3 at-%.

4. The display element according to claim 1 , wherein the first phosphor layer has an atomic ratio of group 4 elements to activators, R Y:X ave , of at most 1, or at most 0.8, or at most 0.6, or at most 0.4.

5. The display element according to claim 1 , wherein the first insulator layer and/or the second insulator layer comprises a compound of a group 4 element, Y, used as a dopant in the first phosphor layer.

6. The display element according to claim 1 , comprising a third insulator layer and a second phosphor layer between the second insulator layer and the third insulator layer.

7. The display element according to claim 1 , wherein the display element is implemented as an inorganic thin film electroluminescent, TFEL, display element.

8. A method comprising:

using a display element for displaying,

wherein the display element comprises at least a first phosphor layer of an activator-group 4 element codoped zinc sulfide, ZnS:X,Y;

wherein at least one of europium, Eu; manganese, Mn; samarium, Sm; and terbium, Tb, is used as an activator, X, in the first phosphor layer; and

wherein at least one of titanium, Ti; zirconium, Zr; hafnium, Hf; and rutherfordium, Rf, is used as a group 4 element dopant, Y, in the first phosphor layer.

9. The method according to claim 8 , wherein using the display element comprises increasing at least one of aging stability and brightness of the display element based on using the group 4 element.

10. The method according to claim 8 , wherein the display element comprises a first insulator layer and a second insulator layer such that the phosphor layer between the first insulator layer and the second insulator layer.

11. A method for manufacturing a display element, the method comprising:

forming a first insulator layer;

forming a first phosphor layer of activator-group 4 element codoped zinc sulfide, ZnS:X, Y; and

forming a second insulator layer such that the first phosphor layer is arranged between the first insulator layer and the second insulator layer;

wherein the first phosphor layer has an average atomic percentage of group 4 elements, at-% ave Y , of at least 0.01 atomic percent, at-%;

wherein at least one of europium, Eu; manganese, Mn; samarium, Sm; and terbium, Tb, is used as an activator, X, in the first phosphor layer; and

wherein at least one of titanium, Ti; zirconium, Zr; hafnium, Hf; and rutherfordium, Rf, is used as a group 4 element dopant, Y, in the first phosphor layer.

12. The method according to claim 11 , further comprising:

forming a second phosphor layer such that the second insulator layer is arranged between the first phosphor layer and the second phosphor layer; and

forming a third insulator layer such that the second phosphor layer is arranged between the second insulator layer and the third insulator layer.

13. The method according to claim 11 , wherein forming the first phosphor layer comprises performing an atomic layer deposition.

14. The method according to claim 13 , wherein at least one of forming the first insulator layer and forming the second insulator layer comprises performing an atomic layer deposition, wherein a group 4 element, Y, precursor is used in the atomic layer deposition for forming the first phosphor layer as a precursor.

15. The method according to claim 11 , wherein the first phosphor layer has an average atomic percentage of group 4 elements, at-% Y ave , of at least 0.01 at-%, or at least 0.02 at-%, or at least 0.03 at-%, or at least 0.04 at-%, or at least 0.05 at-% and/or at most 0.15 at-%, or at most 0.3 at-%, or at most 0.5 at-%, or at most 1 at-%, or at most 2 at-%.

16. The method according to claim 11 , wherein the first phosphor layer has an average atomic percentage of activators, at-% X ave , of at least one of at least 0.05 at-% or at least 0.1 at-% and at most 1.5 at-% or at most 3 at-%.

Priority Claims (1)

Continuity (1)

References Cited (32)