Image analysis apparatus and charged particle beam apparatus
To provide an image analysis apparatus capable of easily extracting an edge of an upper layer pattern formed intersecting with a lower layer pattern so as not to be affected by the lower layer pattern, the image analysis apparatus includes a calculation unit that calculates an analysis range including a region where the lower layer pattern intersects with the upper layer pattern and a region where the lower pattern is not formed, a calculation unit that averages a plurality of signal profiles, a calculation unit that calculates a maximum value and a minimum value of a signal intensity, a calculation unit that calculates a threshold level difference using the maximum value and the minimum value, and a calculation unit that calculates the edge of the upper layer pattern on the signal profile.
1. A charged particle beam apparatus comprising:
a charged particle beam source;
a sample table on which a sample having a first pattern and a second pattern is disposed, the second pattern being disposed over the first pattern and intersecting with the first pattern;
a charged particle beam optical system that irradiates the sample with charged particles emitted from the charged particle beam source as a charged particle beam;
an image analysis apparatus that irradiates the sample with the charged particle beam to evaluate the sample using signal data obtained from the sample, wherein
the image analysis apparatus includes:
a memory;
an input/output device;
a display; and
a processor communicatively coupled to the memory, the input/output device and the display, the processor is configured to:
include a first region including a first portion where the first pattern and the second pattern intersect with each other and a second region wherein the second pattern is disposed at a position where the first pattern is not formed, and calculate an analysis range of the signal data to be processed;
average a plurality of signal profiles obtained in the analysis range;
calculate a maximum value and a minimum value of signal intensity in the averaged signal profile;
calculate a threshold level difference;
calculate an edge of the second pattern in the signal profile using the threshold level difference;
wherein
the first pattern is a pattern of a conductor layer buried in an insulating film.
2. The charged particle beam apparatus according to claim 1 , wherein
each of the plurality of signal profiles is based on a real signal obtained in the first region.
3. The charged particle beam apparatus according to claim 1 , wherein
each of the plurality of signal profiles is based on a virtual signal calculated from another region obtained in the first region.
4. The charged particle beam apparatus according to claim 1 , wherein
each of the plurality of signal profiles is based on a real signal obtained in the second region.
5. The charged particle beam apparatus according to claim 1 , wherein
each of the plurality of signal profiles is based on a virtual signal calculated from another region obtained in the second region.
6. The charged particle beam apparatus according to claim 1 , wherein the threshold level difference is represented as {(the maximum value)−(the minimum value)}×{(100−T)/100} where T is a threshold ratio set by an operator.