IP Library › Granted Patent US 11,029,594
Granted Patent B2
US 11,029,594 · App. 16/332,075 · Granted Jun 8, 2021

Optimization of a lithography apparatus or patterning process based on selected aberration

Inventors: Steven George Hansen (Phoenix, AZ); Kateryna Stanislavovna Lyakhova (Veldhoven, NL); Paulus Jacobus Maria Van Adrichem (Wijchen, NL)
Assignee: ASML Netherlands B.V.
G03F1/36G03F7/70125G03F7/70866G06F17/10G06F30/398G03F7/70441
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Quick Facts
Patent No.
US 11,029,594
App. No.
16/332,075
Granted
Jun 8, 2021
Kind
B2
Abstract

A method including obtaining a selected component of optical aberration of or for a lithography apparatus, under a processing condition; computing an approximate of a cost function, based on the selected component; and producing an adjustment of the lithography apparatus or a patterning process that uses the lithography apparatus, based on the approximate of the cost function.

Claims (62)

1. A method comprising:

obtaining a selected component of optical aberration of or for a lithography apparatus, under a processing condition;

computing, by a hardware computer system, an approximate of a cost function, based on the selected component of optical aberration;

producing an adjustment for the lithography apparatus or a patterning process that uses the lithography apparatus, based on the approximate of the cost function; and

outputting the adjustment, or data derived therefrom, for use in or with the lithography apparatus or the patterning process that uses the lithography apparatus,

wherein the cost function is a function of a plurality of design variables that represent one or more characteristics of the patterning process, wherein:

producing an adjustment of the lithography apparatus or the patterning process comprises producing an adjustment of one or more of the design variables until a certain termination condition is satisfied, and/or

the selected component of optical aberration is among the design variables, and/or

the selected component of optical aberration is a function of one or more of the design variables.

2. The method of claim 1 , wherein the processing condition comprises one or more selected from: a condition of an illumination mode of the lithography apparatus, a condition of a patterning device used in the patterning process, and/or a condition of a projection system of the lithography apparatus.

3. The method of claim 1 , further comprising obtaining the processing condition by optimizing the lithography apparatus or the patterning process without considering any optical aberration.

4. The method of claim 1 , wherein the selected component of optical aberration is represented by a Zernike coefficient.

5. The method of claim 1 , wherein obtaining the selected component of optical aberration is based on a sensitivity of a metric that the cost function represents, with respect to the selected component of optical aberration.

6. The method of claim 1 , wherein the approximate of the cost function is computed based on the selected component of optical aberration but not the other components of the optical aberration.

7. The method of claim 1 , wherein producing an adjustment of the lithography apparatus or the patterning process comprises optimizing the lithography apparatus or the patterning process.

8. The method of claim 1 , wherein producing an adjustment of the lithography apparatus or the patterning process involves a new processing condition, and the method further comprises obtaining a new value of the selected component of optical aberration or a different selected component of optical aberration, under the new processing condition.

9. The method of claim 1 , wherein the cost function represents a metric that characterizes a process window, and further comprising computing the metric,

wherein computing the metric, comprises:

for each of a plurality of offsets from nominal values of processing parameters that span the process window, determining a largest value of a pattern characteristic in a group of patterns, caused by that offset; and

averaging the largest values caused by all the offsets.

10. The method of claim 1 , wherein the cost function represents a metric relating to an image formed in the patterning process.

11. The method of claim 10 , wherein the metric is one or more selected from: an edge placement error or a function thereof, a process window, a metric characterizing a process window, yield, a stochastic effect, presence or probability of a defect, and/or an interlayer characteristic.

12. A method comprising:

obtaining a selected component of optical aberration of or for a lithography apparatus, under a processing condition;

computing, by a hardware computer system, an approximate of a cost function, based on the selected component of optical aberration;

producing an adjustment for the lithography apparatus or a patterning process that uses the lithography apparatus, based on the approximate of the cost function; and

outputting the adjustment, or data derived therefrom, for use in or with the lithography apparatus or the patterning process that uses the lithography apparatus,

wherein computing the approximate of the cost function comprises computing an approximate of a metric the cost function represents,

wherein computing the approximate of the metric comprises:

for each of a plurality of selected components of optical aberration, determining a largest value of a pattern characteristic in a group of patterns, caused by that selected component; and

averaging the largest values caused by all the selected components.

13. The method of claim 12 , wherein the approximate of the metric is weighted with another metric and the weighting is adjusted during the computing.

14. A computer program product comprising a non-transitory computer-readable medium having instructions therein, the instructions, when executed by a computer system, configured to cause the computer system to at least:

obtain a selected component of optical aberration of or for a lithography apparatus, under a processing condition;

compute an approximate of a cost function, based on the selected component of optical aberration;

produce an adjustment for the lithography apparatus or a patterning process that uses the lithography apparatus, based on the approximate of the cost function; and

output the adjustment, or data derived therefrom, for use in or with the lithography apparatus or the patterning process that uses the lithography apparatus

wherein the cost function is a function of a plurality of design variables that represent one or more characteristics of the patterning process, wherein:

producing an adjustment of the lithography apparatus or the patterning process comprises producing an adjustment of one or more of the design variables until a certain termination condition is satisfied, and/or

the selected component of optical aberration is among the design variables, and/or

the selected component of optical aberration is a function of one or more of the design variables.

15. The computer program product of claim 14 , wherein the cost function represents a metric relating to an image formed in the patterning process.

16. The computer program product of claim 14 , wherein the processing condition comprises one or more selected from: a condition of an illumination mode of the lithography apparatus, a condition of a patterning device used in the patterning process, and/or a condition of a projection system of the lithography apparatus.

17. The computer program product of claim 14 , wherein the instructions are further configured to cause the computer system to obtain the processing condition by optimizing the lithography apparatus or the patterning process without considering any optical aberration.

18. The computer program product of claim 14 , wherein production of an adjustment of the lithography apparatus or the patterning process involves a new processing condition, and the instructions are further configured to cause the computer system to obtain a new value of the selected component of optical aberration or a different selected component of optical aberration, under the new processing condition.

19. The computer program product of claim 14 , wherein computation of the approximate of the cost function comprises computation of an approximate of a metric the cost function represents,

wherein computation of the approximate of the metric comprises:

for each of a plurality of selected components of optical aberration, determination of a largest value of a pattern characteristic in a group of patterns, caused by that selected component, and

averaging of the largest values caused by all the selected components.

20. The computer program product of claim 14 , wherein the cost function represents a metric that characterizes a process window, and the instructions are further configured to cause the computer system to compute the metric,

wherein computation of the metric, comprises:

for each of a plurality of offsets from nominal values of processing parameters that span the process window, determination of a largest value of a pattern characteristic in a group of patterns, caused by that offset; and

averaging of the largest values caused by all the offsets.

21. A computer program product comprising a non-transitory computer-readable medium having instructions therein, the instructions, when executed by a computer system, configured to cause the computer system to at least:

obtain a selected component of optical aberration of or for a lithography apparatus, under a processing condition;

compute an approximate of a cost function, based on the selected component of optical aberration;

produce an adjustment for the lithography apparatus or a patterning process that uses the lithography apparatus, based on the approximate of the cost function; and

output the adjustment, or data derived therefrom, for use in or with the lithography apparatus or the patterning process that uses the lithography apparatus,

wherein computation of the approximate of the cost function comprises computation of an approximate of a metric the cost function represents,

wherein computation of the approximate of the metric comprises:

for each of a plurality of selected components of optical aberration, determination of a largest value of a pattern characteristic in a group of patterns, caused by that selected component; and

averaging of the largest values caused by all the selected components.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 11, 2019
From: HANSEN, STEVEN GEORGE; LYAKHOVA, KATERYNA STANISLAVOVNA; VAN ADRICHEM, PAULUS JACOBUS MARIA
To: ASML NETHERLANDS B.V.
Reel/Frame 048561/0271 →
Continuity (2)
Provisional Application 62394085 · Sep 13, 2016
Related Publication 20190369480A1 · Dec 5, 2019