Resin composition, wiring layer laminate for semiconductor, and semiconductor device
One aspect of the present invention relates to a resin composition comprising a curable resin and a curing agent, which is used for forming an inter-wiring layer insulating layer in contact with a copper wiring.
1. A wiring layer laminate for a semiconductor, comprising:
a plurality of wiring layers comprising
an organic insulating layer,
a copper wiring disposed in the organic insulating layer, and
a barrier metal film separating the copper wiring and the organic insulating layer; and
an inter-wiring layer insulating layer disposed between the plurality of wiring layers;
wherein a portion of a surface of the copper wiring is exposed to a principal surface side of one or both of the wiring layer,
the exposed surface of the copper wiring is in contact with the inter-wiring layer insulating layer, and
the inter-wiring layer insulating layer is a layer having a moisture absorptivity of 1% by mass or less after placed in an environment at 130° C. and a relative humidity of 85% for 200 hours.
2. The wiring layer laminate for a semiconductor according to claim 1 , wherein the inter-wiring layer insulating layer is a cured product of a resin composition comprising:
a curable resin; and
a curing agent.
3. The wiring layer laminate for a semiconductor according to claim 2 , wherein the curable resin has at least two maleimide groups and a divalent hydrocarbon group.
4. The wiring layer laminate for a semiconductor according to claim 3 , wherein the hydrocarbon group comprises a chain alkylene group having a main chain with 4 or more carbon atoms.
5. The wiring layer laminate for a semiconductor according to claim 3 , wherein the hydrocarbon group has 8 or more carbon atoms.
6. The wiring layer laminate for a semiconductor according to claim 3 , the hydrocarbon group is a group represented by the following formula (II):
wherein R 2 and R 3 each independently represent an alkylene group, and R 4 and R 5 each independently represent an alkyl group.
7. The wiring layer laminate for a semiconductor according to claim 3 , the curing agent comprises a radical photopolymerization initiator.
8. The wiring layer laminate for a semiconductor according to claim 3 , wherein the resin composition further comprises a compound haying a (meth)acryloyl group.
9. The wiring layer laminate for a semiconductor according to claim 3 , wherein the resin composition further comprises a coupling agent.
10. The wiring layer laminate for a semiconductor according to claim 2 , the curable resin has a divalent organic group having at least 2 imide bonds.
11. The wiring layer laminate for a semiconductor according to claim 10 , the divalent organic group is a group represented by the following formula (I):
wherein R 1 represents a tetravalent organic group.
12. The wiring layer laminate for a semiconductor according to claim 2 , wherein the resin composition further comprises a thermoplastic resin.
13. The wiring layer laminate for a semiconductor according to claim 1 , wherein the organic insulating layer is a layer formed from photosensitive insulating resin.
14. The wiring layer laminate for a semiconductor according to claim 1 , wherein a dielectric constant of the inter-wiring layer insulating layer upon application of 10 GHz is 3.0 or less.
15. The wiring layer laminate for a semiconductor according to claim 1 , wherein a dielectric loss tangent of the inter-wiring layer insulating layer upon application of 10 GHz is 0.005 or less.
16. The wiring layer laminate for a semiconductor according to claim 1 , wherein a 5% weight loss temperature of the inter-wiring layer insulating layer is 300° C. or more.
17. A semiconductor device comprising:
the wiring laminate for a semiconductor according to claim 1 ; and
a semiconductor element electrically connected to the copper wiring.