IP Library › Granted Patent US 11,056,309
Granted Patent B2
US 11,056,309 · App. 16/348,800 · Granted Jul 6, 2021

Method and device for implanting ions in wafers

Inventors: Florian Krippendorf (Jena, DE); Constantin Csato (Stammbach, DE)
Assignee: MI2-FACTORY GMBH
H01J37/05C23C14/18C23C14/48H01J37/1472H01J37/1477H01J37/20H01J37/3171H01L21/046H01L21/0415H01L29/32H01J2237/024H01J2237/0456H01J2237/0458H01J2237/0475H01J2237/057H01J2237/1518H01J2237/20214H01J2237/31701H01J2237/31705H01J2237/31711H01J2237/31713H01L21/265
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Quick Facts
Patent No.
US 11,056,309
App. No.
16/348,800
Granted
Jul 6, 2021
Kind
B2
Abstract

A method comprising the irradiation of a wafer by an ion beam that passes through an implantation filter, the ion beam being electrostatically deviated in a first direction and a second direction in order to move the ion beam over the wafer, and the implantation filter being moved in the second direction to match the movement of the ion beam.

Claims (11)

1. A device comprising:

a wafer chamber, which comprises a wafer holder, which is configured to hold at least one wafer, and

a filter chamber, which comprises a filter holder and first and second closable openings.

2. The device according to claim 1 , wherein the first and second closable openings are each sealable in a pressure-tight manner.

3. The device according to claim 1 , wherein the first and second closable openings and the filter holder lie on a straight line.

4. The device according to claim 1 , wherein the filter holder is movable in at least one direction.

5. The device according to claim 4 , wherein the filter holder is movable out of the filter chamber beyond one of the first and second closable openings.

6. The device according to claim 1 , wherein the filter chamber is arranged in the wafer chamber.

7. The device according to claim 6 , wherein the wafer chamber comprises an implantation opening, wherein the filter holder, the implantation opening, and the wafer holder lie on a straight line in such a way that an ion beam passing through an implantation filter inserted in the filter holder and through the implantation opening can strike a wafer held by the wafer holder.

8. The device according to claim 1 , wherein the filter chamber is arranged outside the wafer chamber.

9. The device according to claim 8 , wherein the wafer chamber comprises an implantation opening, wherein the filter holder, the implantation opening, and the wafer holder lie on a straight line in such a way that an ion beam passing through an implantation filter inserted in the filter holder and through the implantation opening can strike a wafer held by the wafer holder.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 9, 2019
From: KRIPPENDORF, FLORIAN; CSATO, CONSTANTIN
To: MI2-FACTORY GMBH
Reel/Frame 049147/0825 →
Priority Claims (1)
DE 10 2016 122 791.9 · Nov 25, 2016 · national
Continuity (1)
Related Publication 20190267209A1 · Aug 29, 2019