Method of separating a back layer on a singulated semiconductor wafer attached to carrier substrates

1. A method of forming an electronic device comprising:

providing a wafer having a plurality of die formed as part of the wafer and separated from each other by spaces, wherein the wafer has a first major surface and a second major surface opposite to the first major surface, and wherein a layer of material is disposed atop the second major surface, and wherein the layer of material is placed onto a first carrier substrate comprising a first adhesive layer;

singulating the wafer through the spaces to form singulation lines without singulating through the layer of material so that portions of the layer of material overlap the singulation lines;

placing a second carrier substrate comprising a second adhesive layer onto the singulated wafer such that the second adhesive layer faces the first carrier substrate and the singulated wafer is interposed between the first carrier substrate and the second carrier substrate; and

moving a mechanical device adjacent to and in a direction generally parallel to one of the first carrier substrate or the second carrier substrate to separate the portions of layer of material that overlap the singulation lines.

2. The method of claim 1 , wherein:

the second adhesive layer comprises an adhesive strength that is less than that of the first adhesive layer; and

the second adhesive layer extends entirely across the wafer.

3. The method of claim 1 , wherein:

moving the mechanical device includes moving the mechanical device with both the first carrier substrate and the second carrier substrate attached to the wafer.

4. The method of claim 1 , wherein:

moving the mechanical device comprises moving at least one stylus adjacent to and laterally along a surface of the second carrier substrate.

5. The method of claim 1 , wherein:

moving the mechanical device comprises moving the mechanical device against the second carrier substrate while the first carrier substrate is placed adjacent to a compressive material.

6. The method of claim 1 , wherein providing the wafer comprises providing the layer of material comprising a wafer backside coating or a die attach film.

7. The method of claim 1 , wherein providing the wafer comprises providing the layer of material comprising a conductive layer.

8. The method of claim 1 , further comprising cooling at the least the first carrier substrate during at least a portion of the step of moving the mechanical device.

9. A method of singulating a wafer comprising:

providing a wafer having a plurality of die formed as part of the wafer and separated from each other by spaces, wherein the wafer has a first major surface and a second major surface opposite to the first major surface, and wherein a layer of material is disposed atop the second major surface;

placing the wafer and a first carrier substrate into contact with each other, wherein:

the first carrier substrate comprises a first adhesive material, and

the layer of material is disposed adjacent to the first adhesive material;

singulating the wafer through the spaces to form singulation lines, wherein singulating includes stopping in proximity to the layer of material;

placing the wafer and a second carrier substrate into contact with each other, wherein:

the second carrier substrate comprises a second adhesive material having an adhesive strength that is different than that of the first adhesive material;

the second adhesive material faces the wafer and laterally overlaps at least a portion of the wafer; and

the wafer is interposed between the first carrier substrate and the second carrier substrate; and

moving a mechanical device in a direction generally parallel to and adjoining one of the first carrier substrate or the second carrier substrate to separate the layer of material adjacent to the singulation lines.

10. The method of claim 9 , further comprising changing the temperature of the first carrier substrate.

11. The method of claim 9 , wherein moving the mechanical device further comprises pressing the mechanical device against one of the first carrier substrate or the second carrier substrate.

12. The method of claim 9 , wherein:

moving the mechanical device comprises moving the mechanical device adjacent to the second carrier substrate; and

the second adhesive material comprises an adhesive strength that is less than that of the first adhesive material.

13. A method of singulating a wafer comprising:

providing a wafer having a first major surface, a second major surfaces, a plurality of die formed as part of the wafer, a layer of material disposed atop the second major surface, the plurality of die separated by singulation lines that terminate in proximity to the layer of material, and a first carrier substrate having a first adhesive layer adjoining the layer of material;

providing a second carrier substrate having a second adhesive layer, wherein the second adhesive layer comprises an adhesive strength that is different than that of the first adhesive layer;

placing the second adhesive layer proximate to the first major surface of the wafer such that the wafer is interposed between the first carrier substrate and the second carrier substrate; and

moving a mechanical device in a direction generally parallel to and adjoining one of the first carrier substrate or the second carrier substrate to separate the layer of material adjacent to the singulation lines.

14. The method of claim 13 , further comprising:

providing a compressive layer; and

placing the wafer interposed between the compressive layer and the mechanical device such that the first carrier substrate is adjacent to the compressive layer.

15. The method of claim 14 , wherein placing the wafer comprises placing the first carrier substrate so that it physically contacts the compressive layer.

16. The method of claim 13 , wherein providing the wafer comprises providing the layer of material comprising a wafer backside coating ora die attach film.

17. The method of claim 13 , further comprising heating at least the first carrier substrate during at least a portion of the step of moving the mechanical device.

18. The method of claim 13 , further comprising cooling at least the first carrier substrate during at least a portion of the step of moving the mechanical device.

19. The method of claim 13 , wherein:

the second adhesive layer comprises an adhesive strength that is less than that of the first adhesive layer; and

the second adhesive layer laterally overlaps the wafer.

20. The method of claim 13 , wherein moving the mechanical device comprises applying a compressive force generally perpendicular to the substrate.