Semiconductor package and method of forming the same
A semiconductor package and a method of forming the same are disclosed. A method of forming a semiconductor package includes the following operations. A polymer layer is formed over a die. A metal feature is formed in the polymer layer. An argon-containing plasma treatment is performed to the polymer layer and the metal feature.
1. A method of forming a semiconductor package, comprising:
forming a polymer layer over a die;
forming a metal feature in the polymer layer; and
performing an argon-containing plasma treatment to the polymer layer and the metal feature, so as to form a treated hydrophobic portion on top of the polymer layer, wherein the treated hydrophobic portion contains argon.
2. The method of claim 1 , wherein the argon plasma treatment further comprises He, Ne, Kr, Xe, O 2 , H 2 , N 2 or a combination thereof.
3. The method of claim 1 , wherein the argon plasma treatment comprises an argon content of 30 vol % or more.
4. The method of claim 1 , wherein the polymer layer comprises polybenzoxazole (PBO), polyimide (PI) or benzocyclobutene (BCB) or a combination thereof.
5. The method of claim 1 , wherein the treated hydrophobic portion of the polymer layer has a wrinkled top surface from a top view.
6. The method of claim 5 , wherein the treated hydrophobic portion of the polymer layer has a water contact angle of 70° to 120°.
7. The method of claim 1 , wherein the metal feature comprises a redistribution layer, a bump structure or a combination thereof.
8. The method of claim 1 , wherein treated hydrophobic portion of the polymer layer has a thickness of 20 angstroms or more.
9. A method of forming a semiconductor package, comprising:
providing at least one die;
forming a redistribution layer structure over the at least one die;
forming a bump structure over the redistribution layer structure; and
performing a plasma treatment to transform a portion of an uppermost polymer layer of the redistribution layer structure into a moisture-resistant layer containing argon.
10. The method of claim 9 , wherein a gas of the plasma treatment comprises Ar.
11. The method of claim 10 , wherein the gas of the plasma treatment further comprises He, Ne, Kr, Xe, O 2 , H 2 , N 2 or a combination thereof.
12. The method of claim 9 , wherein forming a redistribution layer structure comprising:
forming a first polymer layer;
forming a first redistribution layer in the first polymer layer; and
performing another plasma treatment to make the first polymer layer more moisture-resistant.
13. The method of claim 12 , wherein a gas of the plasma treatment comprises Ar.
14. The method of claim 13 , wherein the gas of the plasma treatment further comprises He, Ne, Kr, Xe, O 2 , H 2 , N 2 or a combination thereof.
15. A semiconductor package, comprising:
at least one die;
a redistribution layer structure, disposed over and electrically to the at least one die;
a bump structure, disposed over and electrically connected to the redistribution layer structure; and
a moisture-resistant layer, being an argon-containing layer and disposed over the redistribution layer structure aside the bump structure.
16. The semiconductor package of claim 15 , wherein the moisture-resistant layer has a water contact angle of 70° to 120°.
17. The semiconductor package of claim 15 , wherein the moisture-resistant layer has a surface roughness Rz of 0.1 μm or more.
18. The semiconductor package of claim 15 , wherein the moisture-resistant layer has a thickness of 20 angstroms or more.
19. The semiconductor package of claim 15 , wherein the moisture-resistant layer comprises a carbon atom content of 75 at % or more and an argon atom content of 0.2-2 at %.
20. The semiconductor package of claim 15 , further comprising at least one moisture-resistant layer between polymer layers of the redistribution layer structure.