IP Library › Granted Patent US 11,037,877
Granted Patent B2
US 11,037,877 · App. 16/354,135 · Granted Jun 15, 2021

Package structure and method of manufacturing the same

Inventors: Zi-Jheng Liu (Taoyuan, TW); Hung-Jui Kuo (Hsinchu, TW); Ming-Tan Lee (Kaohsiung, TW)
Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
H01L23/5381H01L21/4853H01L21/4857H01L21/565H01L21/568H01L23/3128H01L23/5383H01L23/5386H01L23/562H01L24/16H01L25/0655H01L25/50H01L2224/16225H01L2924/3512
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Quick Facts
Patent No.
US 11,037,877
App. No.
16/354,135
Granted
Jun 15, 2021
Kind
B2
Abstract

A package structure includes a first die, a second die, a bridge, an encapsulant and a redistribution layer (RDL) structure. The bridge is arranged side by side with the first die and the second die. The encapsulant laterally encapsulates the first die, the second die and the bridge. The RDL structure is disposed on the first die, the second die, the bridge and the encapsulant. The first die and the second die are electrically connected to each other through the bridge and the RDL structure.

Claims (54)

1. A package structure, comprising:

a first die and a second die;

a bridge, arranged side by side with the first die and the second die;

an encapsulant, laterally encapsulating the first die, the second die and the bridge;

a redistribution layer (RDL) structure, disposed on the first die, the second die, the bridge and the encapsulant,

wherein the first die and the second die are electrically connected to each other through the bridge and the RDL structure,

wherein there is free of active device disposed on the bridge and vertically between the bridge and the RDL structure, wherein a top surface of the bridge is coplanar with a top surface of the first die and a top surface of the second die;

wherein the bridge is free of active devices, and

wherein the top surfaces of the first die, the second die and the bridge are in physical contact with a polymer layer and a redistribution layer of the RDL structure.

2. The package structure of claim 1 , wherein a top surface of the encapsulant is coplanar with the top surfaces of the first die, the second die and the bridge.

3. The package structure of claim 1 , wherein a bottom surface of the bridge is coplanar with a bottom surface of the first die and a bottom surface of the second die.

4. The package structure of claim 1 , wherein portions of the encapsulant are laterally between the bridge and the first die, and laterally between the bridge and the second die.

5. The package structure of claim 1 , wherein the bridge is free of passive devices.

6. The package structure of claim 5 , wherein

the bridge comprises an interconnection structure and a connector on the interconnection structure,

the interconnection structure comprises a conductive line and a via; and

the connector is connected to the conductive line through the via.

7. The package structure of claim 6 , wherein the conductive line has a pitch less than a pitch of a redistribution layer of the RDL structure.

8. The package structure of claim 6 , where the connector of the bridge is in physical contact with bottom surfaces of the redistribution layer and the polymer layer of the RDL structure.

9. The package structure of claim 6 , wherein a portion of the encapsulant is disposed on the interconnection structure and laterally encapsulating sidewalls of the connector.

10. The package structure of claim 1 , wherein a width of the bridge is less than a width of the first die and a width of the second die.

11. A package structure, comprising:

a first die and a second die;

a bridge, disposed between the first die and the second die, wherein the bridge is free of active or passive devices;

an encapsulant, encapsulating sidewalls of the first die, sidewalls of the second die and sidewalls of the bridge;

a RDL structure, disposed on and electrically connected to the first die, the second die, and the bridge,

wherein a top surface of the bridge is coplanar with a top surface of the first die and a top surface of the second die,

wherein there is free of active device disposed on the bridge and vertically between the bridge and the RDL structure, and wherein the top surfaces of the first die, the second die and the bridge are in physical contact with a polymer layer and a redistribution layer of the RDL structure.

12. The package structure of claim 11 , wherein

the bridge comprises a first connector and a second connector;

the first connector is connected to the first die through a first portion of the redistribution layer of the RDL structure; and

the second connector is connected to the second die through a second portion of the redistribution layer of the RDL structure.

13. The package structure of claim 11 , wherein the bridge comprises conductive lines having a pitch less than a pitch of the redistribution layer of the RDL structure.

14. The package structure of claim 11 , wherein a portion of the encapsulant is laterally between the first die and the bridge, and laterally between the second die and the bridge.

15. A method of forming a package structure, comprising:

arranging a first die, a second die and a bridge side by side;

forming an encapsulant laterally encapsulating sidewalls of the first die, sidewalls of the second die and sidewalls of the bridge;

forming an RDL structure on the first die, the second di; the bridge and the encapsulant,

wherein the first die and the second die are electrically connected to each other through the bridge and the RDL structure,

wherein there is free of active device disposed on the bridge and vertically between the bridge and the RDL structure, wherein a top surface of the bridge is coplanar with a top surface of the first die and a top surface of the second die;

wherein the bridge is free of active devices, and

wherein the top surfaces of the first die, the second die and the bridge are in physical contact with a polymer layer and a redistribution layer of the RDL structure.

16. The method of claim 15 , wherein

the first die is sigulated from a first wafer comprising a plurality of first dies, the bridge is singulated from a second wafer comprising a plurality of bridges; and

the number of the bridges comprised in the second wafer is larger than the number of the first dies comprised in the first wafer.

17. The method of claim 15 , wherein the bridge is formed by a forming method, comprising:

providing a substrate, wherein the substrate is free of active or passive devices;

forming an interconnection structure on the substrate, the interconnection structure comprises conductive lines and vias connected to each other; and

forming a plurality of connectors on the interconnection structure.

18. The method of claim 17 , wherein the forming the interconnection structure comprising forming the conductive lines having a pitch less than a pitch of the redistribution layer of the RDL structure.

19. The method of claim 15 , wherein the forming the encapsulant comprising:

forming an encapsulant material layer to encapsulant sidewalls and the top surfaces of the first die, the second die and the bridge;

performing a planarization process to at least remove a portion of the encapsulant material layer over the top surfaces of the first die, the second die and the bridge.

20. The method of the claim 19 , wherein after the performing the planarization process, the top surface of the first die, the top surface of the second die, the top surface of the bridge and a top surface of the encapsulant are coplanar with each other.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 15, 2019
From: LIU, ZI-JHENG; KUO, HUNG-JUI; LEE, MING-TAN
To: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Reel/Frame 048604/0907 →
Continuity (1)
Related Publication 20200294921A1 · Sep 17, 2020