Cleaning method and processing apparatus
A cleaning method for cleaning a processing apparatus including a processing container, a mounting stage configured to mount an object to be processed inside the processing container, an edge ring disposed at a peripheral edge portion of the mounting stage, a gas supply unit configured to supply a gas into an inside of the processing container, and a direct current power source configured to apply a direct voltage to the edge ring, and an exhaust unit configured to exhaust the inside of the processing container includes a first process of exhausting the gas inside the processing container by the exhaust unit while the gas is supplied into the inside of the processing container by the gas supply unit at least predetermined flow rate, and a second process of applying a predetermined direct voltage to the edge ring by the direct current power source.
1. A cleaning method for cleaning a processing apparatus including
a processing container,
a mounting stage configured to mount an object to be processed inside the processing container,
an edge ring disposed at a peripheral edge portion of the mounting stage,
a gas supply unit configured to supply a gas into an inside of the processing container, and
a direct current power source configured to apply direct voltage to the edge ring, and
an exhaust unit configured to exhaust the inside of the processing container, the cleaning method comprising:
a first process of exhausting the gas inside the processing container by the exhaust unit while the gas is supplied into the inside of the processing container by the gas supply unit at least predetermined flow rate; and
a second process of switching over and repeatedly applying predetermined direct voltages, which are mutually adverse between positive and negative voltage values, to the edge ring by the direct current power source.
2. The cleaning method according to claim 1 ,
wherein the processing apparatus further includes a facing member facing the mounting stage inside the processing container, and
another predetermined direct voltage is further applied to the facing member in the second process.
3. The cleaning method according to claim 1 ,
wherein, in the second process, the direct voltages are applied while the first process is performed.
4. The cleaning method according to claim 1 ,
wherein, in the first process, at least one type of a gas selected from among a group including an inert gas, an SF 6 gas, a CF 4 gas, and an O 2 gas is supplied into the inside of a flow rate of at least 1000 sccm.
5. The cleaning method according to claim 4 ,
wherein the inert gas is at least any one of a rare gas and an N 2 gas.
6. A cleaning method for cleaning a processing apparatus including
a processing container,
a mounting stage configured to mount an object to be processed inside the processing container,
a facing member disposed to face the mounting stage inside the processing container,
a gas supply unit configured to supply a gas into an inside of the processing container, and
a direct current power source configured to apply direct voltage to the facing member, and
an exhaust unit configured to exhaust the inside of the processing container, the cleaning method comprising:
a first process of exhausting the gas inside the processing container by the exhaust unit while the gas is supplied into the inside of the processing container by the gas supply unit at least predetermined flow rate; and
a second process of switching over and repeatedly applying predetermined direct voltages, which are mutually adverse between positive and negative voltage values, to the facing member by the direct current power source.
7. The cleaning method according to claim 6 ,
wherein, in the second process, the direct voltages are applied while the first process is performed.
8. The cleaning method according to claim 6 ,
wherein, in the first process, at least one type of a gas selected from among a group including an inert gas, an SF 6 gas, a CF 4 gas, and an O 2 gas is supplied into the inside of a flow rate of at least 1000 sccm.
9. The cleaning method according to claim 8 ,
wherein the inert gas is at least any one of a rare gas and an N 2 gas.