IP Library Granted Patent US 10,608,030
Granted Patent B2
US 10,608,030 · App. 16/361,543 · Granted Mar 31, 2020

Image sensors with diffractive lenses

Inventor: Byounghee Lee (Meridian, ID)
Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
H01L27/14625G02B3/0056G02B5/1885G02B5/201G02B13/0085G02B27/4205H01L27/1462H01L27/1463H01L27/14603H01L27/14621H01L27/14627
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 10,608,030
App. No.
16/361,543
Granted
Mar 31, 2020
Kind
B2
Abstract

An image sensor may include an array of imaging pixels. Each imaging pixel may have a photosensitive area that is covered by a respective diffractive lens to focus light onto the photosensitive area. The diffractive lenses may have a higher index of refraction than the surrounding materials. The diffractive lenses may be formed on an upper or lower surface of a planarization layer or may be embedded within the planarization layer. In some cases, multiple diffractive lenses may be formed over the imaging pixels. Some of the multiple diffractive lenses may have refractive indexes lower than the planarization layer such that the diffractive lenses defocus light. Focusing and defocusing diffractive lenses may be used to tune the response of the imaging pixels to incident light.

Claims (30)

1. An image sensor comprising a plurality of imaging pixels, wherein an imaging pixel of the plurality of imaging pixels comprises:

a photodiode; and

a diffractive lens formed over the photodiode, wherein the diffractive lens of the imaging pixel is formed from a first material that has a first index of refraction, wherein there is a gap between the diffractive lens and a respective adjacent diffractive lens of an adjacent imaging pixel, and wherein a layer that is formed from a second material having a second index of refraction that is different than the first index of refraction fills the gap and extends continuously between the diffractive lens and the respective adjacent diffractive lens.

2. The image sensor defined in claim 1 , wherein the diffractive lens has a planar upper surface and a planar lower surface.

3. The image sensor defined in claim 2 , wherein no microlens with a curved surface is formed over the diffractive lens.

4. The image sensor defined in claim 1 , wherein the diffractive lens comprises silicon nitride.

5. The image sensor defined in claim 1 , further comprising:

a planarization layer that is formed over the plurality of imaging pixels.

6. The image sensor defined in claim 5 , wherein the diffractive lens is formed on a surface of the planarization layer.

7. The image sensor defined in claim 6 , wherein the layer that is formed from the second material is formed on the surface of the planarization layer.

8. The image sensor defined in claim 1 , wherein the layer that is formed from the second material comprises a planarization layer and wherein the diffractive lens is embedded within the planarization layer.

9. An imaging pixel comprising:

a photosensitive area;

a first diffractive lens formed over the photosensitive area, wherein the first diffractive lens is transparent, wherein the first diffractive lens has first and second opposing surfaces, wherein the first and second surfaces of the first diffractive lens are planar, and wherein the diffractive lens has a first index of refraction;

a layer of material formed over the first diffractive lens that has a second index of refraction that is different than the first index of refraction; and

a second diffractive lens formed over the first diffractive lens, wherein a portion of the layer of material is interposed between the first diffractive lens and the second diffractive lens.

10. The imaging pixel defined in claim 9 , wherein the first diffractive lens is embedded within the layer of material.

11. The imaging pixel defined in claim 10 , wherein the second diffractive lens is embedded within the layer of material.

12. The imaging pixel defined in claim 9 , wherein the second diffractive lens has a third index of refraction that is different than the first and second indices of refraction.

13. The imaging pixel defined in claim 12 , wherein the third index of refraction is greater than the first index of refraction.

14. The imaging pixel defined in claim 12 , wherein the third index of refraction is less than the first index of refraction.

15. The imaging pixel defined in claim 9 , further comprising:

a color filter element formed over the photosensitive area.

16. An image sensor comprising a plurality of imaging pixels, wherein each imaging pixel of the plurality of imaging pixels comprises:

a photosensitive area;

a diffractive lens formed over the photosensitive area, wherein the diffractive lens has an upper surface, a lower surface, and edge surfaces and wherein the diffractive lens has a first index of refraction; and

a layer of material having a second index of refraction that is different than the first index of refraction, wherein the edge surfaces, the upper surface, and the lower surface of the diffractive lens are in direct contact with the layer of material.

17. The image sensor defined in claim 16 , wherein the diffractive lens comprises silicon nitride.

18. The imaging pixel defined in claim 9 , wherein the second index of refraction is different than an additional index of refraction of the second diffractive lens.

19. The imaging pixel defined in claim 9 , wherein the layer of material is formed from a different material than the second diffractive lens.

Assignments (3)
RELEASE OF SECURITY INTEREST IN PATENTS PREVIOUSLY RECORDED AT REEL 049473, FRAME 0932 Recorded Aug 17, 2023
From: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC; FAIRCHILD SEMICONDUCTOR CORPORATION
Reel/Frame 064618/0721 →
SECURITY INTEREST Recorded Jun 14, 2019
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC; FAIRCHILD SEMICONDUCTOR CORPORATION
To: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
Reel/Frame 049473/0932 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 22, 2019
From: LEE, BYOUNGHEE
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Reel/Frame 048670/0212 →
Continuity (2)
Continuation 15719174 · Sep 28, 2017
Related Publication 20190221598A1 · Jul 18, 2019