IP Library Granted Patent US 10,832,890
Granted Patent B2
US 10,832,890 · App. 16/364,898 · Granted Nov 10, 2020

Charged particle beam device

Inventors: Masato Suzuki (Tokyo, JP); Satoshi Tomimatsu (Tokyo, JP); Makoto Sato (Tokyo, JP); Tatsuya Asahata (Tokyo, JP)
Assignee: HITACHI HIGH-TECH SCIENCE CORPORATION
H01J37/3053H01J37/20H01J2237/20214H01J2237/20285
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Quick Facts
Patent No.
US 10,832,890
App. No.
16/364,898
Granted
Nov 10, 2020
Kind
B2
Abstract

To automatically repeat an operation of isolating a sample piece, which is formed by processing a sample with an ion beam, and transferring the sample piece to a sample piece holder, a charged particle beam device includes a computer configured to perform control so that, without rotating a needle with which the sample piece is fixed to the sample piece holder, a deposition film deposited on the needle is irradiated with a charged particle beam from a charged particle beam irradiation optical system.

Claims (12)

1. A charged particle beam device, which is configured to automatically perform steps of isolating a sample piece from a sample, shifting a posture of the sample piece, and fixing the sample piece to a sample piece holder, the charged particle beam device comprising:

a charged particle beam irradiation optical system configured to apply a charged particle beam;

a sample stage, on which the sample is to be placed, and which is configured to move;

a needle including a movement mechanism, the movement mechanism including a rotation axis and being configured to hold and carry the sample piece;

a holder fixing table configured to hold the sample piece holder, to which the sample piece is to be transferred;

a gas supply portion configured to supply a gas, from which a deposition film is to be formed through application of a focused ion beam; and

a computer configured to perform control so that, without rotating the needle with which the sample piece is fixed to the sample piece holder, the deposition film deposited on the needle is irradiated with the charged particle beam from the charged particle beam irradiation optical system after disconnecting the needle from the sample piece and under the state in which the needle is rotated for mounting the sample piece to the sample holder such that the deposition film which remains on the needle is removed after disconnecting the needle from the sample piece.

2. The charged particle beam device according to claim 1 , wherein the computer is configured to irradiate the deposition film and the needle with the charged particle beam from the charged particle beam irradiation optical system.

3. The charged particle beam device according to claim 2 , wherein the computer is configured to perform processing of removing an end surface of the needle by irradiating the end surface with the charged particle beam from the charged particle beam irradiation optical system, the end surface being formed when the sample piece and the needle are separated from each other.

4. The charged particle beam device according to claim 2 , wherein the computer is configured to irradiate a side of the needle on which the deposition film is deposited, with the charged particle beam from the charged particle beam irradiation optical system.

5. The charged particle beam device according to claim 2 , wherein the computer is configured to irradiate, when a thickness dimension of a tip end of the needle exceeds a predetermined value, a side of the needle on which the deposition film is deposited, with the charged particle beam from the charged particle beam irradiation optical system, to perform processing so that the thickness dimension falls below the predetermined value.

6. The charged particle beam device according to claim 1 , wherein the computer is configured to end application of the charged particle beam from the charged particle beam irradiation optical system depending on a change in brightness of each pixel in image data of the deposition film and the needle, the image data being acquired by irradiating the deposition film and the needle with the charged particle beam.

Assignments (3)
CHANGE OF NAME Recorded Sep 17, 2025
From: HITACHI HIGH-TECH SCIENCE CORPORATION
To: HITACHI HIGH-TECH ANALYSIS CORPORATION
Reel/Frame 072905/0225 →
CHNAGE OF ADDRESS Recorded Sep 17, 2025
From: HITACHI HIGH-TECH SCIENCE CORPORATION
To: HITACHI HIGH-TECH SCIENCE CORPORATION
Reel/Frame 072909/0725 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 26, 2019
From: SUZUKI, MASATO; TOMIMATSU, SATOSHI; SATO, MAKOTO; ASAHATA, TATSUYA
To: HITACHI HIGH-TECH SCIENCE CORPORATION
Reel/Frame 048702/0976 →
Priority Claims (1)
JP 2018-069105 · Mar 30, 2018 · national
Continuity (1)
Related Publication 20190304745A1 · Oct 3, 2019