Display apparatus
A display apparatus includes: a first thin-film transistor (TFT) including a first semiconductor layer including a silicon semiconductor; a second TFT including a second semiconductor layer including an oxide semiconductor; a first shielding layer configured to overlap the first TFT and positioned between a substrate and the first TFT; and a second shielding layer configured to overlap the second TFT and positioned between the substrate and the second TFT.
1. A display apparatus comprising a pixel in a display area, the pixel comprising:
a first thin-film transistor (TFT) for driving the pixel, the first TFT comprising a first semiconductor layer comprising a silicon semiconductor;
a second TFT comprising a second semiconductor layer comprising an oxide semiconductor, one end of the second semiconductor layer being connected to one end of the first semiconductor layer of the first TFT and the other end of the second semiconductor layer being connected to a gate electrode of the first TFT;
a first shielding layer configured to overlap the first TFT, the first shielding layer interposed between a substrate and the first TFT; and
a second shielding layer configured to overlap the second TFT, the second shielding layer interposed between the substrate and the second TFT.
2. The display apparatus of claim 1 , wherein the first shielding layer and the second shielding layer are positioned on the same layer.
3. The display apparatus of claim 1 , wherein the first shielding layer and the second shielding layer are positioned on different layers.
4. The display apparatus of claim 3 , wherein the second shielding layer is positioned on the same layer as the first semiconductor layer.
5. The display apparatus of claim 3 , wherein the second shielding layer is positioned on the same layer as a gate electrode of the first TFT.
6. The display apparatus of claim 3 , further comprising a capacitor overlapping the first TFT, wherein the second shielding layer is positioned on the same layer as one electrode of the capacitor.
7. The display apparatus of claim 1 , further comprising a capacitor overlapping the second shielding layer and positioned between the second shielding layer and the second TFT.
8. The display apparatus of claim 7 , wherein one electrode of the capacitor is positioned on the same layer as one of the first semiconductor layer of the first TFT and a gate electrode of the first TFT overlapping a channel region of the first semiconductor layer.
9. The display apparatus of claim 1 , further comprising at least one of:
a first touch sensor overlapping the first TFT; and
a second touch sensor overlapping the second shielding layer and positioned between the second shielding layer and the substrate.
10. The display apparatus of claim 1 , wherein the first shielding layer is electrically connected to a power line for applying a power voltage.
11. The display apparatus of claim 1 , wherein the first shielding layer is electrically connected to a power line for applying an initialization voltage.
12. The display apparatus of claim 1 , wherein the first shielding layer is electrically connected to the first semiconductor layer of the first TFT.
13. The display apparatus of claim 1 , wherein the first shielding layer is electrically connected to a gate electrode of the first TFT.
14. The display apparatus of claim 1 , wherein the second shielding layer is electrically connected to a power line for applying an initialization voltage.
15. The display apparatus of claim 1 , wherein the second shielding layer is electrically connected to a gate electrode of the second TFT.
16. The display apparatus of claim 1 , wherein the first TFT is a driving transistor, and the second TFT is a switching transistor.
17. The display apparatus of claim 1 , wherein the first TFT is a switching transistor, and the second TFT is a driving transistor.
18. A display apparatus comprising:
a first thin-film transistor (TFT) comprising a first semiconductor layer including a silicon semiconductor;
a second TFT comprising a second semiconductor layer including an oxide semiconductor;
a capacitor configured to overlap the first TFT;
a first shielding layer including metal overlapping the first TFT, the first shielding layer interposed between a substrate and the first TFT and separated from the first TFT by an insulating layer; and
a second shielding layer overlapping the second TFT, the second shielding layer interposed between the substrate and the second TFT.
19. The display apparatus of claim 18 , wherein the first shielding layer and the second shielding layer are connected to a same voltage source.
20. The display apparatus of claim 18 , wherein the first shielding layer and the second shielding layer are connected to different voltage sources.