Error recovery in magnetic random access memory after reflow soldering

1. A method of manufacturing an electronic device that includes magnetic random access memory (MRAM), comprising:

loading the MRAM with data including main data, first error correcting data, and second error correcting data, wherein:

the MRAM comprises a plurality of MRAM cells characterized by a first magnetic anisotropy corresponding to a first error rate at a predefined temperature; and

the first error rate exceeds a threshold for correcting errors using only the first error correcting data;

after loading the MRAM with the data:

heating the MRAM to the predefined temperature;

correcting errors in the main data using both the first error correcting data and the second error correcting data;

after correcting the errors in the main data:

erasing, from the MRAM, the second error correcting data; and

maintaining, on the MRAM, the first error correcting data.

2. The method of claim 1 , further including:

after erasing, from the MRAM, the second error correcting data, operating the electronic device;

while operating the electronic device, detecting an error in the main data; and

correcting the error in the main data using the first error correcting data.

3. The method of claim 1 , wherein the MRAM is heated to the predefined temperature during a reflow soldering process.

4. The method of claim 1 , wherein the main data comprises firmware for the device.

5. The method of claim 1 , wherein:

the main data is redundantly-encoded in the first error correcting data and the second error correcting data; and

correcting errors in the main data using both the first error correcting data and the second error correcting data includes majority voting.

6. The method of claim 1 , wherein:

at least one of the first error correcting data and the second error correcting data comprise error correcting code data; and

correcting errors in the main data using both the first error correcting data and the second error correcting data includes using one of a Hamming code and a Bose-Chaudhuri-Hocquenghem (BCH) code.

7. The method of claim 1 , further including:

predicting the first error rate based on the predefined temperature; and

allocating an amount of second error correcting data based on the predicted first error rate.

8. The method of claim 1 , wherein each of the plurality of the MRAM cells comprises:

a magnetic storage layer; and

a magnetic reference layer;

wherein a datum is encoded in a relative alignment of a magnetization of the magnetic storage layer and the magnetic reference layer.

9. The method of claim 8 , wherein each of the plurality of the MRAM cells comprises a current-induced magnetic switching device.

10. The method of claim 8 , wherein the first error rate corresponds to a thermal stability of the relative alignment of the magnetization of the magnetic storage layer and the magnetic reference layer.

11. The method of claim 10 , wherein the thermal stability is proportional to the first magnetic anisotropy.

12. The method of claim 11 , wherein the first magnetic anisotropy is a perpendicular magnetic anisotropy.

13. The method of claim 10 , wherein the thermal stability is proportional to a size of the MRAM cell.