Electronic device package with reduced thickness variation
A package for an electronic device may include a first layer. The first layer may include a first dielectric material. The first layer may have a planar first surface. The first layer may have a variable thickness. A second layer may be coupled to the first layer. The second layer may include a second dielectric material and may have a planar second surface. The second layer may have a variable thickness. A seam may be located at an interface between the first layer and the second layer, and the seam may have an undulating profile. The package may include at least one electrical trace, for example located in the first layer or the second layer.
1. A package for an electronic device, comprising:
a first layer including a first dielectric material and having a planar first surface, wherein the first layer has a variable thickness;
a second layer including a second dielectric material and having a planar second surface, wherein the second layer is coupled to the first layer and has a variable thickness;
a seam located at the interface between the first layer and the second layer, wherein the seam has an undulating profile;
at least one electrical trace located in the first layer or the second layer; and
a third layer having a planar third surface and including a first set of interconnects and a third dielectric material, wherein the third layer is coupled to the first layer.
2. The package of claim 1 , further comprising a second set of interconnects included in the second layer, wherein the second set of interconnects includes a first interconnect having a first height and a second interconnect having a second height.
3. The package of claim 2 , wherein the second set of interconnects are coplanar with the second surface.
4. The package of claim 2 ,
wherein the first set of interconnects are spaced at a first pitch and the second set of interconnects are spaced at a second pitch.
5. The package of claim 4 , wherein the first pitch is greater than the second pitch.
6. The package of claim 2 , wherein at least one interconnect of the first set of interconnects is in electrical communication with the first interconnect or the second interconnect through the electrical trace.
7. The package of claim 2 , wherein the first set of interconnects includes a third interconnect having a third height and a fourth interconnect having a fourth height.
8. The package of claim 1 , wherein the second dielectric material includes a negative photoresist or a positive photoresist.
9. The package of claim 1 , wherein the second dielectric material includes an organically modified ceramic.
10. The package of claim 1 , wherein first layer has a maximum thickness and a minimum thickness, and the difference between the maximum thickness and the minimum thickness is within a range of approximately 50 nanometers to 1 millimeter.
11. The package of claim 1 , wherein first layer has a maximum thickness and a minimum thickness, and the difference between the maximum thickness and the minimum thickness is within a range of approximately 0.0001% to 5% of a layer thickness of the first layer.
12. An electronic device, comprising:
a package, including:
a first layer including a first dielectric material and having a planar first surface, wherein the first layer has a variable thickness;
a second layer including a second dielectric material and having a planar second surface, wherein the second layer is coupled to the first layer and has a variable thickness;
a seam located at the interface between the first layer and the second layer, wherein the seam has an undulating profile;
a first set of interconnects included in the second layer, wherein the first set of interconnects includes a first interconnect having a first height and a second interconnect having a second height; and
at least one electrical trace located in the first layer or the second layer; and
a semiconductor die coupled with the package, wherein the semiconductor die is in electrical communication with the package.
13. The electronic device of claim 12 , further comprising a motherboard, wherein the package is in electrical communication with the motherboard, and the package is located between the motherboard and the semiconductor die.
14. The electronic device of claim 12 , wherein the semiconductor die is configured as a processor die, a memory die, a graphics processing unit, or an ASIC die.
15. The package of claim 12 , further comprising a third layer having a planar third surface, wherein the third layer is coupled to the first layer.
16. The package of claim 15 , wherein the third layer includes a third dielectric material.
17. The package of claim 12 , wherein the second set of interconnects are coplanar with the second surface.
18. The package of claim 12 , wherein first layer has a maximum thickness and a minimum thickness, and the difference between the maximum thickness and the minimum thickness is within a range of approximately 0.0001% to 5% of a layer thickness of the first layer.
19. A package for an electronic device, comprising:
a first layer including a first dielectric material and having a planar first surface, wherein the first layer has a variable thickness;
a second layer including a second dielectric material and having a planar second surface, wherein the second layer is coupled to the first layer and has a variable thickness;
a seam located at the interface between the first layer and the second layer, wherein the seam has an undulating profile;
a first set of interconnects included in the second layer, wherein the first set of interconnects includes a first interconnect having a first height and a second interconnect having a second height; and
at least one electrical trace located in the first layer or the second layer.
20. The package of claim 19 , further comprising a third layer having a planar third surface, wherein the third layer is coupled to the first layer.
21. The package of claim 20 , wherein the third layer includes a third dielectric material.
22. The package of claim 19 , wherein the second set of interconnects are coplanar with the second surface.