Memory component having internal read-modify-write operation
An memory component includes a memory bank and a command interface to receive a read-modify-write command, having an associated read address indicating a location in the memory bank and to either access read data from the location in the memory bank indicated by the read address after an adjustable delay period transpires from a time at which the read-modify-write command was received or to overlap multiple read-modify-write commands. The memory component further includes a data interface to receive write data associated with the read-modify-write command and an error correction circuit to merge the received write data with the read data to form a merged data and write the merged data to the location in the memory bank indicated by the read address.
1. A memory component comprising:
a memory bank;
a command interface coupled to the memory bank, the command interface to receive, from a memory controller, a read-modify-write command, the read-modify-write command having an associated read address indicating a location in the memory bank to access read data;
a data interface coupled to the memory bank, the data interface to receive write data associated with the read-modify-write command; and
an error correction circuit coupled to the data interface and to the memory bank, the error correction circuit to:
decode the read data as decoded read data;
merge the received write data with the decoded read data;
encode the merged data during a same period of time in which the read data is decoded; and
write the merged data to the location in the memory bank indicated by the read address.
2. The memory component of claim 1 , further comprising:
a clock receiver circuit to receive a clock signal, wherein the period of time is based on a clock cycle of the clock signal.
3. The memory component of claim 1 , wherein to decode the read data, the error correction circuit is to correct single bit errors in the read data using an error syndrome in the read data.
4. The memory component of claim 1 , wherein to merge the received write data with the read data, the error correction circuit is to combine the received write data and the read data using a data mask received with the write data.
5. The memory component of claim 1 , wherein to encode the merged data, the error correction circuit is to generate an error syndrome for the merged data.
6. The memory component of claim 1 , wherein the read data is accessed from the location in the memory bank after an adjustable delay period transpires from a time at which the read-modify-write command was received.
7. The memory component of claim 6 , wherein the command interface is to access, during the adjustable delay period, read data associated with a read command received prior to the read-modify-write command.
8. A method of operation in a memory component, the method comprising:
receiving, from a memory controller, a read-modify-write command, the read-modify-write command having an associated read address indicating a location in a memory bank to access read data;
receiving write data associated with the read-modify-write command;
decoding the read data as decoded read data;
merging the received write data with the decoded read data;
encoding the merged data during a same period of time in which the read data is decoded; and
writing the merged data to the location in the memory bank indicated by the read address.
9. The method of claim 8 , further comprising:
receiving a clock signal, wherein the period of time is based on a clock cycle of the clock signal.
10. The method of claim 8 , wherein decoding the read data comprises correcting single bit errors in the read data using an error syndrome in the read data.
11. The method of claim 8 , wherein merging the received write data with the read data comprises combining the received write data and the read data using a data mask received with the write data.
12. The method of claim 8 , wherein encoding the merged data comprises generating an error syndrome for the merged data.
13. The method of claim 8 , wherein the read data is accessed from the location in the memory bank after an adjustable delay period transpires from a time at which the read-modify-write command was received.
14. The method of claim 13 , further comprising:
accessing, during the adjustable delay period, read data associated with a read command received prior to the read-modify-write command.
15. A memory component comprising:
means for receiving, from a memory controller, a read-modify-write command, the read-modify-write command having an associated read address indicating a location in a memory bank to access read data;
means for receiving write data associated with the read-modify-write command;
means for decoding the read data as decoded read data;
means for merging the received write data with the decoded read data;
means for encoding the merged data during a same period of time in which the read data is decoded; and
means for writing the merged data to the location in the memory bank indicated by the read address.
16. The memory component of claim 15 , further comprising:
means for receiving a clock signal, wherein the period of time is based on a clock cycle of the clock signal.
17. The memory component of claim 15 , wherein decoding the read data comprises correcting single bit errors in the read data using an error syndrome in the read data.
18. The memory component of claim 15 , wherein merging the received write data with the read data comprises combining the received write data and the read data using a data mask received with the write data.
19. The memory component of claim 15 , wherein encoding the merged data comprises generating an error syndrome for the merged data.
20. The memory component of claim 15 , wherein the read data is accessed from the location in the memory bank after an adjustable delay period transpires from a time at which the read-modify-write command was received.