Memory component having internal read-modify-write operation
An memory component includes a memory bank and a command interface to receive a read-modify-write command, having an associated read address indicating a location in the memory bank and to either access read data from the location in the memory bank indicated by the read address after an adjustable delay period transpires from a time at which the read-modify-write command was received or to overlap multiple read-modify-write commands. The memory component further includes a data interface to receive write data associated with the read-modify-write command and an error correction circuit to merge the received write data with the read data to form a merged data and write the merged data to the location in the memory bank indicated by the read address.
1. A memory device comprising:
a first memory die; and
a second memory die stacked with the first memory die, wherein each of the first memory die and the second memory die comprise:
one or more memory banks;
a command interface coupled to the one or more memory banks, the command interface to receive, from a memory controller, a read-modify-write command having an associated read address indicating a location in the one or more memory banks and to access read data from the location in the one or more memory banks indicated by the read address after an adjustable delay period transpires from a time at which the read-modify-write command was received;
a data interface coupled to the one or more memory banks, the data interface to receive write data associated with the read-modify-write command; and
an error correction circuit coupled to the data interface and to the one or more memory banks, the error correction circuit to merge the received write data with the read data to form a merged data and write the merged data to the location in the one or more memory banks indicated by the read address.
2. The memory device of claim 1 , wherein the adjustable delay period is adjustable in view of at least one of a control signal received at a delay element in the memory device, a value specified in the read-modify-write command, or a value maintained in a control register in the memory device, and wherein increasing the adjustable delay period increases a rate at which successive read-modify-write commands are processed.
3. The memory device of claim 1 , wherein each of the first memory die and the second memory die further comprise:
a plurality of memory bank pairs; and
a dedicated error correction circuit associated with each of the plurality of memory bank pairs, wherein a read-modify-write command directed toward each memory bank pair is processed on the dedicated error correction circuit in parallel, such that error detection and correction for a read-modify-write operation for one bank of a memory bank pair proceeds in a staggered fashion with an other bank of the memory bank pair.
4. The memory device of claim 1 , wherein the adjustable delay period comprises two column cycle intervals of a system clock, and wherein the error correction circuit is further to:
decode the read data and encode the merged data within a same column cycle interval of the system clock, wherein a period of time that transpires when decoding the read data and encoding the merged data within a same column cycle interval is less than a time that transpires when decoding and encoding separately.
5. The memory device of claim 1 , wherein the error correction circuit is further to:
decode the read data prior to merging the read data with the received write data, wherein to decode the read data, the error correction circuit to correct single bit errors in the read data using an error syndrome in the read data.
6. The memory device of claim 1 , wherein to merge the received write data with the read data to form the merged data, the error correction circuit is to combine the write data and the read data using a data mask received with the write data.
7. The memory device of claim 1 , wherein the error correction circuit is further to:
encode the merged data prior to writing the merged data to the location in the memory bank, wherein to encode the merged data, the error correction circuit to generate an error syndrome for the merged data.
8. A memory device comprising:
a first memory die; and
a second memory die stacked with the first memory die, wherein each of the first memory die and the second memory die comprise:
one or more memory banks; and
processing logic coupled to the one or more memory banks, wherein the processing logic is configured to:
receive, from a memory controller, a read-modify-write command having an associated read address indicating a location in the one or more memory banks;
access read data from the location in the one or more memory banks indicated by the read address after an adjustable delay period transpires from a time at which the read-modify-write command was received;
receive write data associated with the read-modify-write command;
merge the received write data with the read data to form a merged data; and
write the merged data to the location in the one or more memory banks indicated by the read address.
9. The memory device of claim 8 , wherein the adjustable delay period is adjustable in view of at least one of a control signal received at a delay element in the memory device, a value specified in the read-modify-write command, or a value maintained in a control register in the memory device, and wherein increasing the adjustable delay period increases a rate at which successive read-modify-write commands are processed.
10. The memory device of claim 8 , wherein each of the first memory die and the second memory die further comprise:
a plurality of memory bank pairs; and
a dedicated error correction circuit associated with each of the plurality of memory bank pairs, wherein a read-modify-write command directed toward each memory bank pair is processed on the dedicated error correction circuit in parallel, such that error detection and correction for a read-modify-write operation for one bank of a memory bank pair proceeds in a staggered fashion with an other bank of the memory bank pair.
11. The memory device of claim 8 , wherein the adjustable delay period comprises two column cycle intervals of a system clock, and wherein the processing logic is further configured to:
decode the read data and encode the merged data within a same column cycle interval of the system clock, wherein a period of time that transpires when decoding the read data and encoding the merged data within a same column cycle interval is less than a time that transpires when decoding and encoding separately.
12. The memory device of claim 8 , wherein the processing logic is further configured to:
decode the read data prior to merging the read data with the received write data, wherein to decode the read data, the processing logic is to correct single bit errors in the read data using an error syndrome in the read data.
13. The memory device of claim 8 , wherein to merge the received write data with the read data to form the merged data, the processing logic is to combine the write data and the read data using a data mask received with the write data.
14. The memory device of claim 8 , wherein the processing logic is further configured to:
encode the merged data prior to writing the merged data to the location in the memory bank, wherein to encode the merged data, the processing logic is to generate an error syndrome for the merged data.
15. A method of operation in a memory device, the memory comprising:
receiving, from a memory controller, a read-modify-write command having an associated read address indicating a location in one or more memory banks of a first memory die stacked with a second memory die;
accessing read data from the location in the one or more memory banks indicated by the read address after an adjustable delay period transpires from a time at which the read-modify-write command was received;
receiving write data associated with the read-modify-write command;
merging the received write data with the read data to form a merged data; and
writing the merged data to the location in the one or more memory banks indicated by the read address.
16. The method of claim 15 , wherein the adjustable delay period is adjustable in view of at least one of a control signal received at a delay element in the memory device, a value specified in the read-modify-write command, or a value maintained in a control register in the memory device, and wherein increasing the adjustable delay period increases a rate at which successive read-modify-write commands are processed.
17. The method of claim 15 , wherein the adjustable delay period comprises two column cycle intervals of a system clock, and wherein the method further comprises:
decoding the read data and encode the merged data within a same column cycle interval of the system clock, wherein a period of time that transpires when decoding the read data and encoding the merged data within a same column cycle interval is less than a time that transpires when decoding and encoding separately.
18. The method of claim 15 , further comprising:
decoding the read data prior to merging the read data with the received write data, wherein decoding the read data comprises correcting single bit errors in the read data using an error syndrome in the read data.
19. The method of claim 15 , wherein merging the received write data with the read data to form the merged data comprises combining the write data and the read data using a data mask received with the write data.
20. The method of claim 15 , further comprising
encoding the merged data prior to writing the merged data to the location in the memory bank, wherein encoding the merged data comprises generating an error syndrome for the merged data.