Solid state image sensor, production method thereof and electronic device
A solid state image sensor includes a semiconductor substrate where photoelectric conversion regions for converting light into charges are arranged per pixel planarly arranged; an organic photoelectric conversion film laminated at a light irradiated side of the semiconductor substrate via an insulation film and formed at the regions where the pixels are formed; a lower electrode formed at and in contact with the organic photoelectric conversion film at a semiconductor substrate side; a first upper electrode laminated at a light irradiated side of the organic photoelectric conversion film and formed such that ends of the first upper electrode are substantially conform with ends of the organic photoelectric conversion film when the solid state image sensor is planarly viewed; and a film stress suppressor for suppressing an effect of a film stress on the organic photoelectric conversion film, the film stress being generated on the first upper electrode.
1. An imaging device, comprising:
a first photodiode disposed in a semiconductor substrate;
a first insulating layer disposed above the semiconductor substrate;
a first lower electrode disposed within the first insulating layer;
an organic photoelectric conversion film disposed directly above the first insulating layer;
an upper electrode disposed above the organic photoelectric conversion film; and
a film disposed over the organic photoelectric conversion film and the upper electrode,
wherein the first lower electrode is disposed between the organic photoelectric conversion film and the first photodiode,
wherein, in a plan view, a first plane area of the film is greater than a plane area of the upper electrode,
wherein the film is in physical contact with the first insulating layer; and
wherein the first insulating layer is a single layer insulating layer.
2. The imaging device according to claim 1 , wherein the film is transparent to visible light.
3. The imaging device according to claim 1 , wherein the film absorbs light with a wavelength of about 400 nm or less.
4. The imaging device according to claim 1 , wherein the film is configured to suppress a strain of the upper electrode.
5. The imaging device according to claim 1 , wherein the first photodiode and the first lower electrode correspond to a first pixel.
6. The imaging device according to claim 1 , further comprising:
a second photodiode disposed in the semiconductor substrate; and
a second lower electrode disposed in the first insulating layer,
wherein the second lower electrode is disposed between the organic photoelectric conversion film and the second photodiode.
7. The imaging device according to claim 6 ,
wherein the first photodiode and the first lower electrode correspond to a first pixel and the second photodiode and the second lower electrode correspond to a second pixel.
8. The imaging device according to claim 1 ,
wherein the film covers a side surface of the upper electrode and a side surface of the organic photoelectric conversion film.
9. The imaging device according to claim 1 ,
wherein the upper electrode and the film are formed of a same material.
10. The imaging device according to claim 1 ,
wherein the film is disposed around an outer periphery of the upper electrode.
11. The imaging device according to claim 1 ,
wherein ends of the upper electrode substantially conform with ends of the organic photoelectric conversion film.
12. The imaging device according to claim 1 , further comprising a second photodiode disposed between the first photodiode and the first lower electrode.
13. The imaging device according to claim 1 ,
wherein a light incident side of the first lower electrode is substantially co-planar with a light incident side of the first insulating layer.
14. The imaging device according to claim 1 , further comprising a second insulating layer disposed above the upper electrode, wherein the film is disposed over the second insulating layer.
15. The imaging device according to claim 14 ,
wherein the second insulating layer is transparent to visible light.
16. The imaging device according to claim 14 ,
wherein the second insulating layer absorbs light with a wavelength of about 400 nm or less.
17. The imaging device according to claim 1 ,
wherein the upper electrode is transparent to visible light.
18. The imaging device according to claim 1 ,
wherein the upper electrode absorbs light with a wavelength of about 400 nm or less.
19. The imaging device according to claim 1 ,
wherein the organic photoelectric conversion film includes a structure having at least one of an organic p type semiconductor and an organic n type semiconductor.
20. An electronic device, comprising:
an optical system;
an imaging device, comprising:
a first photodiode disposed in a semiconductor substrate;
a first insulating layer disposed above the semiconductor substrate;
a first lower electrode disposed within the first insulating layer;
an organic photoelectric conversion film disposed directly above the first insulating layer;
an upper electrode disposed above the organic photoelectric conversion film; and
a film disposed over the organic photoelectric conversion film and the upper electrode,
wherein the first lower electrode is disposed between the organic photoelectric conversion film and the first photodiode,
wherein, in a plan view, a first plane area of the film is greater than a plane area of the upper electrode, and
wherein the film is in contact with the first insulating layer;
signal processing circuitry; and
wherein the first insulating layer is a single layer insulating layer.