Inverted T channel field effect transistor (ITFET) including a superlattice
A semiconductor device may include a substrate and an inverted T channel on the substrate and including a superlattice. The superlattice may include stacked groups of layers, with each group of layers including stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The semiconductor device may further include source and drain regions on opposing ends of the inverted T channel, and a gate overlying the inverted T channel between the source and drain regions.
1. A semiconductor device comprising:
a substrate;
an inverted T channel on the substrate and comprising a superlattice, the superlattice comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions;
source and drain regions on opposing ends of the inverted T channel; and
a gate overlying the inverted T channel between the source and drain regions.
2. The semiconductor device of claim 1 wherein the substrate comprises a semiconductor-on-insulator (SOI) substrate.
3. The semiconductor device of claim 1 wherein the gate comprises a gate insulator overlying the superlattice channel layer, and a gate electrode overlying the gate insulator.
4. The semiconductor device of claim 1 wherein the base semiconductor monolayers comprise silicon.
5. The semiconductor device of claim 1 wherein each base semiconductor portion comprises a base semiconductor selected from the group consisting of Group IV semiconductors, Group III-V semiconductors, and Group II-VI semiconductors.
6. The semiconductor device of claim 1 wherein the at least one non-semiconductor monolayer comprises oxygen.
7. The semiconductor device of claim 1 wherein the at least one non-semiconductor monolayer comprises a non-semiconductor selected from the group consisting of oxygen, nitrogen, fluorine, and carbon-oxygen.
8. The semiconductor device of claim 1 wherein all of the base semiconductor portions are a same number of monolayers thick.
9. The semiconductor device of claim 1 wherein at least some of the base semiconductor portions are a different number of monolayers thick.
10. A semiconductor device comprising:
a semiconductor-on-insulator (SOI) substrate;
an inverted T channel on the SOI substrate and comprising a superlattice, the superlattice comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions;
source and drain regions on opposing ends of the inverted T channel; and
a gate overlying the inverted T channel between the source and drain regions and comprising a gate insulator overlying the superlattice channel layer, and a gate electrode overlying the gate insulator.
11. The semiconductor device of claim 10 wherein the base semiconductor monolayers comprise silicon.
12. The semiconductor device of claim 10 wherein each base semiconductor portion comprises a base semiconductor selected from the group consisting of Group IV semiconductors, Group III-V semiconductors, and Group II-VI semiconductors.
13. The semiconductor device of claim 10 wherein the at least one non-semiconductor monolayer comprises oxygen.
14. The semiconductor device of claim 10 wherein the at least one non-semiconductor monolayer comprises a non-semiconductor selected from the group consisting of oxygen, nitrogen, fluorine, and carbon-oxygen.
15. The semiconductor device of claim 10 wherein all of the base semiconductor portions are a same number of monolayers thick.
16. The semiconductor device of claim 10 wherein at least some of the base semiconductor portions are a different number of monolayers thick.
17. A semiconductor device comprising:
a substrate;
an inverted T channel on the substrate and comprising a superlattice, the superlattice comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base silicon monolayers defining a base silicon portion, and at least one oxygen monolayer constrained within a crystal lattice of adjacent base silicon portions;
source and drain regions on opposing ends of the inverted T channel; and
a gate overlying the inverted T channel between the source and drain regions.
18. The semiconductor device of claim 17 wherein the substrate comprises a semiconductor-on-insulator (SOI) substrate.
19. The semiconductor device of claim 17 wherein the gate comprises a gate insulator overlying the superlattice channel layer, and a gate electrode overlying the gate insulator.
20. The semiconductor device of claim 17 wherein all of the base semiconductor portions are a same number of monolayers thick.
21. The semiconductor device of claim 17 wherein at least some of the base semiconductor portions are a different number of monolayers thick.