Composition for resist underlayer film formation, resist underlayer film and forming method thereof, production method of patterned substrate, and compound
A composition for resist underlayer film formation contains a compound having a group represented by formula (1), and a solvent. R 1 represents an organic group having 2 to 10 carbon atoms and having a valency of (m+n), wherein the carbon atoms include two carbon atoms that are adjacent to each other, with a hydroxy group or an alkoxy group bonding to one of the two carbon atoms, and with a hydrogen atom bonding to another of the two carbon atoms; L 1 represents an ethynediyl group or a substituted or unsubstituted ethenediyl group; R 2 represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; n is an integer of 1 to 3; * denotes a bonding site to a moiety other than the group represented by the formula (1) in the compound; and m is an integer of 1 to 3.
1. A composition for resist underlayer film formation comprising:
a compound comprising a group represented by formula (1); and
a solvent,
wherein, in the formula (1),
R 1 represents an organic group having 2 to 10 carbon atoms and having a valency of (m+n), wherein the carbon atoms comprise two carbon atoms that are adjacent to each other, with a hydroxy group or an alkoxy group bonding to one of the two carbon atoms, and with a hydrogen atom bonding to another of the two carbon atoms, and wherein a hydrogen atom does not bond to the carbon atom to which the hydroxy group or the alkoxy group bonds;
L 1 represents an ethynediyl group or a substituted or unsubstituted ethenediyl group;
R 2 represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms;
n is an integer of 1 to 3, wherein in a case where n is no less than 2, a plurality of L 1 s are identical or different, and a plurality of R 2 s are identical or different;
* denotes a bonding site to a moiety other than the group represented by the formula (1) in the compound; and
m is an integer of 1 to 3.
2. The composition according to claim 1 , wherein a content of oxygen atoms in the compound is no less than 4% by mass.
3. The composition according to claim 1 , wherein the compound comprises an aromatic ring.
4. The composition according to claim 1 , further comprising an acid generating agent.
5. The composition according to claim 1 , wherein the group represented by the formula (1) is represented by formula (1-1) or (1-2):
wherein, in the formulae (1-1) and (1-2),
R 3 s each independently represent a hydrogen atom or an alkyl group having 1 to 8 carbon atoms; and
L 1 , R 2 and * are as defined in the formula (1).
6. The composition according to claim 1 , wherein a content of the compound in the composition is no less than 1% by mass and no greater than 50% by mass.
7. A resist underlayer film formed from the composition according to claim 1 .
8. A method for resist underlayer film formation comprising:
applying the composition according to claim 1 directly or indirectly on an upper face side of a substrate to form a coating film; and
heating the coating film.
9. The method according to claim 8 , wherein a content of oxygen atoms in the compound is no less than 4% by mass.
10. The method according to claim 8 , wherein the compound comprises an aromatic ring.
11. The method according to claim 8 , wherein the composition comprises an acid generating agent.
12. The method according to claim 8 , wherein the group represented by the formula (1) is represented by formula (1-1) or (1-2):
wherein, in the formulae (1-1) and (1-2),
R 3 s each independently represent a hydrogen atom or an alkyl group having 1 to 8 carbon atoms; and
L 1 , R 2 and * are as defined in the formula (1).
13. The method according to claim 8 , wherein a content of the compound in the composition is no less than 1% by mass and no greater than 50% by mass.
14. A production method of a patterned substrate comprising:
forming a resist pattern directly or indirectly on an upper face side of the resist underlayer film obtained by the method according to claim 8 ; and
carrying out etching using the resist pattern as a mask.
15. The production method according to claim 14 , wherein a content of oxygen atoms in the compound is no less than 4% by mass.
16. The production method according to claim 14 , wherein the compound comprises an aromatic ring.
17. The production method according to claim 14 , wherein the composition comprises an acid generating agent.
18. The production method according to claim 14 , wherein the group represented by the formula (1) is represented by formula (1-1) or (1-2):
wherein, in the formulae (1-1) and (1-2),
R 3 s each independently represent a hydrogen atom or an alkyl group having 1 to 8 carbon atoms; and
L 1 , R 2 and * are as defined in the formula (1).
19. The production method according to claim 14 , wherein a content of the compound in the composition is no less than 1% by mass and no greater than 50% by mass.