Manufacturing method of three-dimensional semiconductor device
A semiconductor device includes a first channel layer and a second channel layer, each extending from an upper portion to a lower portion; and word lines stacked toward the upper portion from the lower portion, the word lines spaced apart from each other, the word lines each extending to surround the first channel layer and the second layer; a first lower select group surrounding a portion of the first channel layer that further protrudes toward the lower portion than the word lines; and a second lower select group surrounding a portion of the second channel layer that further protrudes toward the lower portion than the word lines.
1. A method of manufacturing a semiconductor device, the method comprising:
forming a first stack structure;
forming isolation insulating layers penetrating the first stack structure, wherein the first stack structure is separated into first patterns by the isolation insulating layers;
forming a second stack structure on the first patterns and the isolation insulating layers; and
forming slits penetrating the second stack structure such that the second stack structure is separated into second patterns, wherein the slits penetrate the first patterns, respectively, such that each of the first patterns is separated into third patterns between adjacent isolation insulating layers.
2. The method of claim 1 , wherein the slits and the isolation insulating layers are alternately disposed in one direction.
3. The method of claim 1 , further comprising, before forming the slits, forming channel layers that penetrate the first patterns through the second stack structure.
4. The method of claim 3 , wherein each of the channel layers includes a lower portion that penetrates any one of the first patterns and an upper portion that penetrates the second stack structure and has a greater width than the lower portion.
5. The method of claim 3 , wherein a distance between lower portions of the channel layers, the lower portions penetrating the first patterns, is greater than a distance between upper portions of the channel layers, the upper portions penetrating the second stack structure.
6. The method of claim 1 , wherein each of the first stack structure and the second stack structure includes a structure in which an interlayer insulating layer and a sacrificial layer are stacked, and
wherein the method further comprises replacing the sacrificial layers of the first and second stack structures with conductive patterns through the slit.
7. The method of claim 1 , wherein the first stack structure is formed on a source region, and
wherein the method further comprises forming a source contact line connected to the source region in the slit.
8. The method of claim 1 , further comprising:
before forming the second stack structure, forming lower holes that penetrate the first stack structure, and filling a first semiconductor layer in each of the lower holes; and
after forming the second stack structure, forming upper holes that penetrate the second stack structure and leave the first semiconductor layer exposed, and forming a second semiconductor layer connected to the first semiconductor layer in each of the upper holes.
9. A method of manufacturing a semiconductor device, the method comprising:
forming a first stack structure;
forming a second stack structure on the first stack structure;
forming channel layers penetrating the second stack structure and the first stack structure; and
forming slits penetrating the second stack structure and the first stack structure so that a first group including first channel layers of the channel layers and a second group including second channel layers of the channel layers are disposed between adjacent slits,
wherein the first stack structure is separated into a first lower select group and a second lower select group between the adjacent slits, and
wherein the first lower select group and the second lower select group are spaced apart from each other between the first group and the second group.
10. The method of claim 9 , wherein the first lower select group and the second lower select group are spaced apart from each other by an isolation layer disposed between the adjacent slits.
11. The method of claim 9 , wherein each of the channel layers includes a lower portion surrounded by the first stack structure and an upper portion surrounded by the second stack structure, and
wherein the upper portion has a greater width than the lower portion.
12. The method of claim 9 , wherein a distance between lower portions of the channel layers, the lower portions penetrating the first stack structure, is greater than a distance between upper portions of the channel layers, the upper portions penetrating the second stack structure.
13. The method of claim 9 , wherein the first stack structure is formed on a source region, and
wherein each of the channel layers has a longitudinal sectional structure of which width becomes narrower as the structure comes closer to the source region.
14. The method of claim 9 , wherein each of the first stack structure and the second stack structure includes a structure in which an interlayer insulating layer and a sacrificial layer are stacked, and
wherein the method further comprises replacing the sacrificial layers of the first and second stack structures with conductive patterns through the slit.
15. The method of claim 9 , wherein forming of the channel layers comprises:
forming lower holes that penetrate the first stack structure;
filling a first semiconductor layer in each of the lower holes;
forming upper holes that penetrate the second stack structure and leave the first semiconductor layer exposed; and
forming a second semiconductor layer connected to the first semiconductor layer in each of the upper holes.