IP Library Granted Patent US 10,950,551
Granted Patent B2
US 10,950,551 · App. 16/397,539 · Granted Mar 16, 2021

Embedded component package structure and manufacturing method thereof

Inventors: Yu-Ju Liao (Kaohsiung, TW); Chien-Fan Chen (Kaohsiung, TW); Chien-Hao Wang (Kaohsiung, TW)
Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
H01L23/5384H01L21/4871H01L21/67288H01L23/3107H01L23/5383H05K3/4688
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Quick Facts
Patent No.
US 10,950,551
App. No.
16/397,539
Granted
Mar 16, 2021
Kind
B2
Abstract

An embedded component package structure including a dielectric structure and a component is provided. The component is embedded in the dielectric structure and is provided with a plurality of conductive pillars. The conductive pillars are exposed from an upper surface of the dielectric structure and have a first thickness and a second thickness, respectively, and the first thickness is not equal to the second thickness.

Claims (24)

1. An embedded component package structure, comprising:

a dielectric structure; and

an component embedded in the dielectric structure, wherein the component is provided with a plurality of conductive pillars, the conductive pillars being exposed from an upper surface of the dielectric structure and each conductive pillar having a first height and a second height respectively, wherein the first height is not equal to the second height.

2. The package structure according to claim 1 , wherein the component has a warpage between 10-25 μm.

3. The package structure according to claim 1 , wherein the component is provided with a redistribution layer and an insulation layer, the redistribution layer is disposed on the insulation layer, and the redistribution layer has a plurality of electrical pads on which the conductive pillars are disposed.

4. The package structure according to claim 1 , wherein the first height differs from the second height by at least 10 μm.

5. The package structure according to claim 1 , wherein the first height and the second height are at least greater than 3 μm.

6. The package structure according to claim 1 , wherein upper surfaces of the conductive pillars are aligned with the upper surface of the dielectric structure, and lower surfaces of the conductive pillars are located on levels of different heights.

7. The package structure according to claim 1 , wherein the conductive pillars have a first side and a second side, and a length of the first side is not equal to a length of the second side.

8. The package structure according to claim 1 , further comprising a conductive layer covering the dielectric structure and electrically connected to the conductive pillars.

9. The package structure according to claim 1 , wherein each of the conductive pillars has a center line, the center lines have a first inclined angle and a second inclined angle with respect to a vertical line, and the first inclined angle is not equal to the second inclined angle.

10. An embedded component package structure, comprising:

a dielectric structure; and

a component embedded in the dielectric structure, wherein the component is provided with a plurality of conductive pillars, wherein each of the conductive pillars has a center line, the center lines have a first inclined angle and a second inclined angle with respect to a vertical line, and the first inclined angle is not equal to the second inclined angle.

11. The package structure according to claim 10 , wherein the component has a warpage between 10-25 μm.

12. The package structure according to claim 10 , wherein the component is provided with a redistribution layer and an insulation layer, the redistribution layer is disposed on the insulation layer, and the redistribution layer has a plurality of electrical pads disposed on the electrical pads.

13. The package structure according to claim 10 , wherein upper surfaces of the conductive pillars are aligned with an upper surface of the dielectric structure, and lower surfaces of the conductive pillars are located on levels of different heights.

14. The package structure according to claim 13 , wherein the conductive pillars are exposed from the upper surface of the dielectric structure and each conductive pillar has a first height and a second height respectively, and the first height is not equal to the second height.

15. The package structure according to claim 14 , wherein the first height differs from the second height by at least 10 μm.

16. The package structure according to claim 14 , wherein the first height and the second height are at least greater than 3 μm.

17. The package structure according to claim 10 , wherein the conductive pillars have a first side and a second side, a length of the first side is not equal to a length of the second side.

18. The package structure according to claim 10 , further comprising a conductive layer covering the dielectric structure and electrically connected to the conductive pillars.

19. The package structure according to claim 1 , wherein at least one of the plurality of conductive pillars has a lateral surface in direct contact with the dielectric structure.

20. The package structure according to claim 1 , wherein at least one of the plurality of conductive pillars has a uniform width measured in a direction substantially parallel to the upper surface of the dielectric structure.

Assignments (2)
MERGER Recorded Apr 2, 2020
From: ASE EMBEDDED ELECTRONICS INC.
To: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
Reel/Frame 052294/0297 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 30, 2019
From: LIAO, YU-JU; CHEN, CHIEN-FAN; WANG, CHIEN-HAO
To: ASE EMBEDDED ELECTRONICS INC.
Reel/Frame 049033/0223 →
Continuity (1)
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