Semiconductor device including a chip capacitor mounted on a wiring substrate
The terminal pattern TP 1 of the wiring substrate PB has a side T 1 a facing the terminal pattern TP 2 and the terminal pattern TP 2 of the wiring substrate PB has a side T 2 a facing the side T 1 a of the terminal pattern TP 1 . The side T 1 a and the side of T 2 a are exposed from the opening portion OP 1 and OP 2 of the solder resist layer SR 1 respectively, and outer peripheries of terminal patterns TP 1 and TP 2 other than sides T 1 a and T 2 a are not exposed from opening portions OP 1 and OP 2 . The opening portion OP 1 and the opening portion OP 2 are separated from each other. The electrode E 1 of the capacitor C 1 is soldered to the terminal pattern TP 1 exposed from the opening portion OP 1 , and the electrode E 2 of the capacitor C 1 is soldered to the terminal pattern TP 2 exposed from the opening portion OP 2.
1. A semiconductor device comprising:
a wiring substrate;
a semiconductor chip mounted on the wiring substrate; and
a first chip capacitor mounted on the wiring substrate, the first chip capacitor having a first electrode and a second electrode opposite the first electrode,
wherein the wiring substrate includes:
a first conductive layer which includes a first terminal pattern and a second terminal pattern; and
an insulating layer which covers the first conductive layer,
wherein the insulating layer includes:
a first opening portion exposing a part of the first terminal pattern; and
a second opening portion exposing a part of the second terminal pattern,
wherein, in plan view, the first opening portion and the second opening portion are separated apart from each other such that the insulating layer is located between the first opening portion and the second opening portion,
wherein the second terminal pattern is not exposed in the first opening portion,
wherein the first terminal pattern is not exposed in the second opening portion,
wherein the first terminal pattern has a first side which faces the second terminal pattern in the plan view,
wherein the second terminal pattern has a second side which faces the first side of the first terminal pattern in the plan view,
wherein the first side of the first terminal pattern is exposed in the first opening portion,
wherein the second side of the second terminal pattern is exposed in the second opening portion,
wherein other sides of the first terminal pattern except the first side are not exposed in the first opening portion,
wherein other sides of the second terminal pattern except the second side are not exposed in the second opening portion,
wherein the first electrode of the first chip capacitor is electrically connected with the first terminal pattern exposed in the first opening portion via a first solder,
wherein the second electrode of the first chip capacitor is electrically connected with the second terminal pattern exposed in the second opening portion via a second solder,
wherein the first opening portion has a third side facing the second opening portion in the plan view,
wherein the second opening portion has a fourth side facing the third side of the first opening portion in the plan view,
wherein a conductive member of the first conductive layer is not disposed between the first side of the first terminal pattern and the third side of the first opening portion, and
wherein the conductive member of the first conductive layer is not disposed between the second side of the second terminal pattern and the fourth side of the second opening portion.
2. The semiconductor device according to claim 1 ,
wherein an interval between the first side of the first terminal pattern and the third side of the first opening portion is more than 100 μm in the plan view, and
wherein an interval between the second side of the second terminal pattern and the fourth side of the second opening portion is more than 100 μm in the plan view.
3. The semiconductor device according to claim 1 ,
wherein the other sides of the first terminal pattern except the first side is covered with the insulating layer, and
wherein the other sides of the second terminal pattern except the second side is covered with the insulating layer.
4. The semiconductor device according to claim 1 , wherein the insulating layer is a solder resist layer.
5. The semiconductor device according to claim 1 , wherein the first chip capacitor is inserted in series connection into a signal transmission path through which an electric signal is input to or output from a circuit of the semiconductor chip.
6. The semiconductor device according to claim 1 ,
wherein the first conductive layer further includes a first wiring, and
wherein the first wiring is connected to the other sides of the first terminal pattern except the first side.
7. The semiconductor device according to claim 6 ,
wherein the first conductive layer further includes a second wiring, and
wherein the second wiring is connected to the other sides of the second terminal pattern except the second side.
8. A semiconductor device comprising:
a wiring substrate;
a semiconductor chip mounted on the wiring substrate;
a first chip capacitor mounted on the wiring substrate, the first chip capacitor having a first electrode and a second electrode opposite the first electrode; and
a second chip capacitor mounted on the wiring substrate, the second chip capacitor including a third electrode and a fourth electrode opposite the third electrode,
wherein the wiring substrate includes:
a first conductive layer which includes a first terminal pattern, a second terminal pattern, a third terminal pattern, and a fourth terminal pattern; and
an insulating layer which covers the first conductive layer, wherein the insulating layer includes:
a first opening portion exposing a part of the first terminal pattern;
a second opening portion exposing a part of the second terminal pattern;
a third opening portion exposing a part of the third terminal patter; and
a fourth opening portion exposing a part of the fourth terminal pattern,
wherein, in plan view, the first opening portion and the second opening portion are separated apart from each other such that the insulating layer is located between the first opening portion and the second opening portions,
wherein, in the plan view, the third opening portion and the fourth opening portion are separated apart from each other such that, the insulating layer is located between the third opening portion and the fourth opening portion,
wherein the second terminal pattern is not exposed in each of the first opening portion, the third opening portion and the fourth opening portion,
wherein the first terminal pattern is not exposed in each of the second opening portion, the third opening portion, and the fourth opening portion,
wherein the fourth terminal pattern is not exposed in each of the first opening portion, the second opening portion, and the third opening portion,
wherein the third terminal pattern is not exposed in each of the first opening portion, the second opening portion, and the fourth opening portion,
wherein the first terminal pattern has a first side which faces the second terminal pattern in the plan view,
wherein the first side of the first terminal pattern is exposed in the first opening portion,
wherein other sides of the first terminal pattern except the first side is not exposed in the first opening portion,
wherein the second terminal pattern has a second side which faces the first side of the first terminal pattern in the plan view,
wherein the second side of the second terminal pattern is exposed in the second opening portion,
wherein other sides of the second terminal pattern except the second side is not exposed in the second opening portion,
wherein the third opening portion is disposed inside the third terminal pattern in the plan view,
wherein the fourth opening portion is disposed inside the fourth terminal pattern in the plan view,
wherein the first electrode of the first chip capacitor is electrically connected with the first terminal pattern exposed in the first opening portion via a first solder,
wherein the second electrode of the first chip capacitor is electrically connected with the second terminal pattern exposed in the second opening portion via a second solder,
wherein the third electrode of the second chip capacitor is electrically connected with the third terminal pattern exposed in the third opening portion via a third solder connected portion, and
wherein the fourth electrode of the second chip capacitor is electrically connected with the fourth terminal pattern exposed in the fourth opening portion via a fourth solder connected portion.
9. The semiconductor device according to claim 8 ,
wherein the third terminal pattern is a terminal for a power supply voltage, and
wherein the fourth terminal pattern is a terminal for a reference potential.
10. The semiconductor device according to claim 9 , wherein an interval between the second chip capacitor and the semiconductor chip is smaller than an interval between the first chip capacitor and the semiconductor chip.
11. The semiconductor device according to claim 10 , wherein the first chip capacitor is inserted in series connection into a signal transmission path through which an electric signal is input to or output from a circuit of the semiconductor chip.
12. The semiconductor device according to claim 9 , wherein the third terminal pattern is surrounded with the fourth terminal pattern in the plan view.
13. The semiconductor device according to claim 9 ,
wherein the third terminal pattern has a fifth side which faces the fourth terminal pattern in the plan view,
wherein the fourth terminal pattern has a sixth side which faces the fifth side of the third terminal pattern in the plan view, and
wherein a distance between the fifth side of the third terminal pattern and the sixth side of the fourth pattern is less than a distance between the first side of the first terminal pattern and the second side of the second pattern.
14. The semiconductor device according to claim 13 ,
wherein the first opening portion has a third side facing the second opening portion in the plan view,
wherein the second opening portion has a fourth side facing the third side of the first opening portion in the plan view,
wherein a conductive member of the first conductive layer is not disposed between the first side of the first terminal pattern and the third side of the first opening portion, and
wherein the conductive member of the first conductive layer is not disposed between the second side of the second terminal pattern and the fourth side of the second opening portion.
15. The semiconductor device according to claim 14 ,
wherein an interval between the first side of the first terminal pattern and the third side of the first opening portion is more than 100 μm in the plan view, and
wherein an interval between the second side of the second terminal pattern and the fourth side of the second opening portion is more than 100 μm in the plan view.