Semiconductor device
A manufacturing method of a semiconductor device includes the following steps. A semiconductor substrate including at least one fin structure is provided. A gate material layer is formed on the semiconductor substrate, and the fin structure is covered by the gate material layer. A trench is formed partly in the gate material layer and partly in the fin structure. An isolation structure is formed partly in the trench and partly outside the trench. At least one gate structure is formed straddling the fin structure by patterning the gate material layer after the step of forming the isolation structure. A top surface of the isolation structure is higher than a top surface of the gate structure in a vertical direction for enhancing the isolation performance of the isolation structure. A sidewall spacer is formed on sidewalls of the isolation structure, and there is no gate structure formed on the isolation structure.
1. A semiconductor device, comprising:
a semiconductor substrate, wherein the semiconductor substrate comprises at least one fin structure;
a plurality of gate structures disposed straddling the at least one fin structure;
an interlayer dielectric disposed on the at least one fin structure;
an isolation structure partly disposed in the at least one fin structure and partly disposed in the interlayer dielectric above the at least one fin structure, wherein a topmost surface of the isolation structure is higher than a topmost surface of each of the gate structures in a vertical direction; and
a plurality of source/drain regions at least partially disposed in the at least one fin structure, wherein the source/drain regions are disposed on two sides of each of the gate structures in an extending direction of the at least one fin structure, and some of the source/drain regions are disposed between the isolation structure and the gate structures.
2. The semiconductor device of claim 1 , wherein a distance between the topmost surface of the isolation structure and a top surface of the at least one fin structure in the vertical direction is longer than a distance between the topmost surface of each of the gate structures and the top surface of the at least one fin structure in the vertical direction.
3. The semiconductor device of claim 1 , further comprising:
a sidewall spacer disposed on sidewalls of the isolation structure and sidewalls of the gate structures, wherein the sidewall spacer disposed on the sidewalls of the isolation structure is higher than the sidewall spacer disposed on the sidewalls of the gate structures in the vertical direction.
4. The semiconductor device of claim 1 , wherein a maximum width of the isolation structure is smaller than a maximum width of each of the gate structures in an extending direction of the at least one fin structure.
5. The semiconductor device of claim 1 , wherein the gate structures comprises metal gate structures or dummy gate structures.
6. The semiconductor device of claim 1 , wherein the interlayer dielectric is partly disposed on the topmost surface of the isolation structure and partly disposed on the topmost surface of each of the gate structures.