Etching method and etching apparatus
An etching method includes: adsorbing an adsorbate based on a processing gas containing BCl 3 gas onto a target object, which serves as a to-be-etched object, by: supplying H 2 gas and the processing gas to a process space in which the target object is disposed; and applying power of a predetermined frequency to the process space, while supplying the H 2 gas is stopped, to generate plasma in the process space; and etching the target object by generating plasma of a rare gas in the process space to activate the adsorbate.
1. An etching method comprising:
adsorbing an adsorbate based on a processing gas containing BCl 3 gas onto a target object, which serves as a to-be-etched object, wherein the step of adsorbing the adsorbate comprises:
supplying H 2 gas and the processing gas to a process space in which the target object is disposed; and
applying power of a predetermined frequency to the process space, while supplying the H 2 gas is stopped and the processing gas continues to be supplied to the process space, to generate plasma of the processing gas in the process space; and
etching the target object by generating plasma of a rare gas in the process space to activate the adsorbate.
2. The etching method of claim 1 , wherein the step of adsorbing the adsorbate further comprises stopping supplying the H 2 gas before the power of the predetermined frequency is applied to the process space.
3. The etching method of claim 1 , wherein the step of adsorbing the adsorbate further comprises supplying the H 2 gas only for a stabilization time for plasma excitation.
4. The etching method of claim 1 , wherein the target object is a semiconductor wafer including, in a silicon oxide film:
a via hole formed to reach a metal layer; and
a natural oxide film formed over the metal layer.
5. The etching method of claim 1 , wherein the step of adsorbing the adsorbate and the step of etching the target object are repeated one or more times, and purging is performed between the step of adsorbing the adsorbate and the step of etching the target object.
6. The etching method of claim 1 , wherein a gas flow rate ratio of BCl 3 and H 2 supplied for a stabilization time during the step of adsorbing the adsorbate ranges from 1.15 to 1.4.
7. The etching method of claim 1 , wherein a selection ratio between a silicon oxide film formed over the target object and a metal oxide film formed over a metal layer is 5 or larger.
8. The etching method of claim 1 , wherein the rare gas supplied during the step of etching the target object is Ar.
9. The etching method of claim 1 , wherein the power applied during the step of adsorbing the adsorbate and the step of etching the target object is applied from at least one selected from the group of an upper part and a lower part.