Semiconductor memory device having a bonded circuit chip including a solid state drive controller connected to a control circuit

1. A semiconductor memory device comprising:

a circuit chip including a substrate, a control circuit provided on the substrate, a solid state drive controller provided on the substrate, and a circuit-side interconnection layer;

an array chip being bonded to the circuit chip, the array chip including a memory-side interconnection layer and a three-dimensionally disposed plurality of memory cells above the memory-side interconnection layer, the memory cells connected to the memory-side interconnection layer; and

a bonding metal provided between the circuit-side interconnection layer and the memory-side interconnection layer, and bonded to the memory-side interconnection layer and the circuit-side interconnection layer; wherein

the control circuit is connected to the memory-side interconnection layer through the circuit-side interconnection layer and the bonding metal,

the control circuit is connected to the solid state drive controller through the circuit-side interconnection layer.

2. The device according to claim 1 , wherein

the array chip includes a plurality of semiconductor bodies, a plurality of electrode layers facing to the semiconductor bodies, and a plurality of bit lines connected to the semiconductor bodies,

the control circuit includes a row decoder controlling potentials of the electrode layers, and a sense amplifier sensing and amplifying potentials of the bit lines.

3. The device according to claim 2 , wherein

the array chip includes

a first select gate layer provided between a lower most layer of the electrode layers and the bit line, the first select gate layer electrically connected to the memory-side interconnection layer, and

a second select gate layer provided above an upper most layer of the electrode layers, the second select gate layer electrically connected to the memory-side interconnection layer.

4. The device according to claim 1 , wherein

the array chip includes

a charge storage film provided between one of the semiconductor bodies and one of the electrode layers; and

a source line connected to the semiconductor bodies.

5. The device according to claim 1 , wherein

the electrode layers are formed in a step shape at an end of a memory cell array region where the memory cells are disposed, and

the memory-side interconnection layer includes word interconnection layers connected to the electrode layers formed in the step shape.

6. The device according to claim 5 , wherein

the bonding metal includes a plurality of bit-line lead-out sections electrically connected to the bit lines, and

the bit-line lead-out sections are disposed in a region overlapping the memory cell array region.

7. The device according to claim 5 , wherein

the bonding metal includes a plurality of word-line lead-out sections electrically connected to the word interconnection layers.

8. The device according to claim 1 , further comprising an insulating film provided around the bonding metal.

9. The device according to claim 1 , wherein

a plurality of semiconductor memory chips is stacked,

each of the semiconductor memory chips includes the array chip, the circuit chip, and the bonding metal,

each of the semiconductor memory chips includes an end portion along one side of the semiconductor memory chip, and

a plurality of pads included in the circuit chip, and a plurality of via holes penetrating through the array chip and reaching the pads are arrayed in the end portion along the one side.

10. The device according to claim 9 , wherein the circuit chip is a combined control circuit chip including the control circuit and the solid state drive controller.

11. The device according to claim 9 , further comprising external connection electrodes extending to an upper surface of the pads through the via holes.

12. The device according to claim 9 , wherein

the pads are provided in a same layer as the circuit-side interconnection layer and are formed of a same material as the circuit-side interconnection layer.

13. The device according to claim 1 , wherein the circuit chip includes MOSFETs formed on the substrate and electrically connected to the circuit-side interconnection layer.

14. The device according to claim 1 , wherein the substrate has thickness of 10 to 20 μm.

15. The device according to claim 1 , wherein the bonding metal is a copper or a copper alloy.