IP Library Granted Patent US 11,003,356
Granted Patent B2
US 11,003,356 · App. 16/421,618 · Granted May 11, 2021

Memory system

Inventors: Tatsuya Zettsu (Yokohama, JP); Yoshihisa Kojima (Kawasaki, JP)
Assignee: Toshiba Memory Corporation
G06F3/061G06F3/064G06F3/0619G06F3/0647G06F3/0652G06F3/0679G06F12/0246G06F3/0653G06F3/0655G06F2212/1032G06F2212/7205
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Quick Facts
Patent No.
US 11,003,356
App. No.
16/421,618
Granted
May 11, 2021
Kind
B2
Abstract

A memory system includes a nonvolatile memory having memory blocks; and a controller configured to receive a request for writing user data from a host; select at least a first block having a first percentage of valid data among the memory blocks, determine a second percentage different from the first percentage on the basis of at least the first percentage of the valid data in the first block, determine a first ratio between a write amount of the user data in accordance with the request from the host and a write amount of the valid data in at least the first block on the basis of the second percentage determined, and write the user data and the valid data in the first block into the nonvolatile memory on the basis of the first ratio.

Claims (32)

1. A memory system comprising:

a nonvolatile memory having memory blocks; and

a controller configured to:

receive a request for writing user data from a host;

select at least a first block having a first percentage of valid data among the memory blocks;

determine a second percentage different from the first percentage on the basis of at least the first percentage of the valid data in the first block;

determine a first ratio between a write amount of the user data in accordance with the request from the host and a write amount of the valid data in at least the first block on the basis of the second percentage determined; and

write the user data and the valid data in the first block into the nonvolatile memory on the basis of the first ratio.

2. The system of claim 1 , wherein

the controller selects at least the first block as a target of a garbage collection process.

3. The system of claim 1 , wherein

the controller determines 1:N as the first ratio, where N=R/(1−R), N is a write amount of the valid data in the first block into the nonvolatile memory when a write amount of the user data into the nonvolatile memory is 1, and R is the second percentage, and wherein N is a number greater than or equal to zero and R is a number greater than or equal to zero and less than one.

4. The system of claim 1 , wherein

at least the first block includes the first block, a second block, and a third block, and

the controller selects the third block from the memory blocks after writing the valid data in the first block, determines a fourth percentage on the basis of a second percentage of valid data in the second block and a third percentage of valid data in the third block, determines a second ratio between a write amount of user data into the nonvolatile memory and a write amount of the valid data in the second block into the nonvolatile memory on the basis of the fourth percentage, and writes the user data and the valid data in the second block on the basis of the second ratio.

5. The system of claim 1 , wherein

the controller changes the first block to a free block having no valid data after writing the valid data in the first block.

6. A method for controlling a memory system including a nonvolatile memory having memory blocks, the method comprising:

receiving a request for writing user data from a host;

selecting at least a first block having a first percentage of valid data among the memory blocks;

determining a second percentage different from the first percentage on the basis of at least the first percentage of the valid data in the first block;

determining a first ratio between a write amount of the user data in accordance with the request from the host and a write amount of the valid data in at least the first block on the basis of the second percentage determined; and

writing the user data and the valid data in the first block into the nonvolatile memory on the basis of the first ratio.

7. The method of claim 6 , wherein

the selecting comprises selecting at least the first block as a target of a garbage collection process.

8. The method of claim 6 , wherein

the determining of the first ratio comprises determining 1:N as the first ratio, where N=R/(1−R), N is a write amount of the valid data in the first block into the nonvolatile memory when a write amount of the user data into the nonvolatile memory is 1, and R is the second percentage, wherein N is a number greater than or equal to zero and R is a number greater than or equal to zero and less than one.

9. The method of claim 6 , wherein

at least the first block includes the first block, a second block, and a third block, and

the method further comprises

selecting the third block from the memory blocks after writing the valid data in the first block, determining a fourth percentage on the basis of a second percentage of valid data in the second block and a third percentage of valid data in the third block, determining a second ratio between a write amount of user data into the nonvolatile memory and a write amount of the valid data in the second block into the nonvolatile memory on the basis of the fourth percentage, and writing the user data and the valid data in the second block on the basis of the second ratio.

10. The method of claim 6 , further comprising changing the first block to a free block having no valid data after writing the valid data in the first block.

Assignments (3)
CHANGE OF NAME AND ADDRESS Recorded Feb 4, 2022
From: K.K PANGEA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 058957/0124 →
CHANGE OF NAME AND ADDRESS Recorded Jan 31, 2022
From: TOSHIBA MEMORY CORPORATION
To: KIOXIA CORPORATION
Reel/Frame 058905/0582 →
MERGER Recorded Jan 31, 2022
From: TOSHIBA MEMORY CORPORATION
To: K.K PANGEA
Reel/Frame 058946/0675 →
Continuity (4)
Division 16105476 · Aug 20, 2018
Continuation 15267734 · Sep 19, 2016
Provisional Application 62304485 · Mar 7, 2016
Related Publication 20190278478A1 · Sep 12, 2019