Lids for integrated circuit packages with solder thermal interface materials
Disclosed herein are lids for integrated circuit (IC) packages with solder thermal interface materials (STIMs), as well as related methods and devices. For example, in some embodiments, an IC package may include a STIM between a die of the IC package and a lid of the IC package. The lid of the IC package may include nickel, the IC package may include an intermetallic compound (IMC) between the STIM and the nickel, and the lid may include an intermediate material between the nickel and the IMC.
1. An integrated circuit (IC) package, comprising:
a package substrate;
a die;
a lid, wherein the lid includes nickel, and the die is between the package substrate and the lid;
a solder thermal interface material (STIM) between the die and the lid;
an intermetallic compound (IMC) between the STIM and the nickel; and
an intermediate material between the nickel and the IMC, wherein the intermediate material includes vanadium, titanium, zirconium, tungsten, cerium, hafnium, tantalum, yttrium, niobium, or molybdenum.
2. The IC package of claim 1 , wherein a thickness of the intermediate material is between 70 nanometers and 400 nanometers and the intermediate material separates the nickel and the IMC.
3. The IC package of claim 1 , wherein the intermediate material is between the nickel and the STIM.
4. The IC package of claim 1 , wherein the lid further includes copper, and the nickel is between the copper and the intermediate material.
5. The IC package of claim 1 , wherein the lid further includes aluminum, and the nickel is between the aluminum and the intermediate material.
6. The IC package of claim 1 , wherein the IMC includes indium.
7. The IC package of claim 6 , wherein the IMC includes gold or silver.
8. The IC package of claim 1 , wherein the IMC is laterally coextensive with the STI M.
9. The IC package of claim 1 , wherein the IMC is not laterally coextensive with the STIM.
10. The IC package of claim 1 , wherein:
the intermediate material has a first face and a second face,
the second face is opposite the first face,
the first face of the intermediate material is in contact with the nickel of the lid, and
the second face of the intermediate material is in contact with the IMC.
11. A lid for an integrated circuit (IC) package, the lid comprising:
a core comprising a first material;
an exterior layer around the core, wherein the exterior layer includes nickel on at least a portion of the first material, and a material composition of the core is different from a material composition of the exterior layer;
a second material comprising indium, silver, or gold; and
an intermediate material separating the exterior layer and the second material, wherein the intermediate material includes vanadium, titanium, zirconium, tungsten, cerium, hafnium, tantalum, yttrium, niobium, or molybdenum.
12. The lid of claim 11 , wherein the second material has a thickness between 0.1 microns and 1 micron.
13. The lid of claim 11 , wherein the intermediate material and the second material are on an underside of the lid.
14. The lid of claim 11 , wherein the intermediate material is in contact with the exterior layer.
15. The lid of claim 14 , wherein the second material is in contact with the portion of the intermediate material.
16. The lid of claim 14 , wherein the intermediate material is further in contact with the second material.
17. An integrated circuit (IC) assembly, comprising:
an IC package including a solder thermal interface material (STIM) between a die of the IC package and a lid of the IC package, wherein the lid of the IC package includes a core and an exterior layer around the core, the exterior layer includes nickel, and a material composition of the core is different from a material composition of the exterior layer, the IC package further includes an intermediate material, a first adhesion material region between the STIM and the intermediate material, and a second adhesion material region between the STIM and the die, wherein the intermediate material includes vanadium, titanium, zirconium, tungsten, cerium, hafnium, tantalum, yttrium, niobium, or molybdenum; and
a circuit board coupled to the IC package.
18. The IC assembly of claim 17 , wherein the IC package is a ball grid array package.
19. An integrated circuit (IC) package, comprising:
a package substrate;
a die;
a lid, wherein the lid includes a core and an exterior layer around the core, the exterior layer includes nickel, a material composition of the core is different from a material composition of the exterior layer, and the die is between the package substrate and the lid;
a solder thermal interface material (STIM) between the die and the lid;
an intermediate material, wherein the intermediate material includes vanadium, titanium, zirconium, tungsten, cerium, hafnium, tantalum, yttrium, niobium, or molybdenum;
a first adhesion material region between the STIM and the intermediate material; and
a second adhesion material region between the STIM and the die.
20. The IC package of claim 19 , wherein:
the intermediate material has a first face and a second face,
the second face is opposite the first face,
the first face of the intermediate material is in contact with the exterior layer of the lid, and
the second face of the intermediate material is in contact with the first adhesion material region.