Thin film fluoropolymer composite CMP polishing method
The invention provides a polymer-polymer composite polishing method comprising a polishing layer having a polishing surface for polishing or planarizing a substrate. The method includes attaching a polymer-polymer composite having a polishing layer and a polymeric matrix. The polymer matrix has fluoropolymer particles embedded in the polymeric matrix. Then a cationic particle slurry is applied to the polymer-polymer composite polishing pad. Conditioning the polymer-polymer composite polishing pad with an abrasive cuts the polymer-polymer composite polishing pad; and rubbing the cut polymer-polymer composite polishing pad against the substrate forms the polishing surface. The polishing surface has a fluorine concentration measured in atomic percent at a penetration depth of 1 to 10 nm of at least ten percent higher than the bulk fluorine concentration measured with at a penetration depth of 1 to 10 μm to polish or planarize the substrate.
1. A method for polishing or planarizing a substrate of at least one of semiconductor, optical and magnetic substrates, the method comprising the following:
attaching a polymer-polymer composite polishing pad to a polishing device, the polymer-polymer composite polishing pad comprising a polishing layer having a polishing surface for polishing or planarizing the substrate; a polymeric matrix forming the polishing layer, the polymer matrix having a tensile strength, and fluoropolymer particles embedded in the polymeric matrix, the fluoropolymer particles having a tensile strength lower than the tensile strength of the polymeric matrix, the polishing pad having a bulk fluorine concentration;
applying a slurry to the polymer-polymer composite polishing pad, the slurry containing cationic particles;
conditioning the polymer-polymer composite polishing pad with an abrasive to cut the polymer-polymer composite polishing pad; and
rubbing the cut polymer-polymer composite polishing pad against the substrate to form a thin film on the polishing surface, the thin film having a fluorine concentration measured by x-ray photoelectron spectroscopy in atomic percent at a penetration depth of 1 to 10 nm of at least ten percent higher than the bulk fluorine concentration measured with energy-dispersion X-ray spectroscopy at a penetration depth of 1 to 10 μm and to polish or planarize the substrate with the thin film on the polishing surface.
2. The polishing or planarizing method of claim 1 wherein the slurry includes abrasive particles having a positive zeta potential and polishing or planarizing occurs with the fluoropolymer particles having a zeta potential that is more negative than the polymer matrix.
3. The polishing or planarizing method of claim 1 wherein the polishing or planarizing occurs with the slurry containing ceria particles and at a pH below the isoelectric pH of the ceria particles to increase substrate removal rate.
4. The polishing or planarizing method of claim 1 wherein the polishing or planarizing occurs with the slurry containing ceria particles and at a pH below the isoelectric pH of the ceria particles to decrease polishing defects.
5. The polishing or planarizing method of claim 1 wherein the polishing or planarizing occurs with a cationic slurry where the fluoropolymer increases friction between the polymer-polymer composite polishing pad and the substrate to increase substrate removal rate.
6. A method for polishing or planarizing a substrate of at least one of semiconductor, optical and magnetic substrates, the method comprising the following:
attaching a polymer-polymer composite polishing pad to a polishing device, the polymer-polymer composite polishing pad comprising a polishing layer having a polishing surface for polishing or planarizing the substrate, a polymeric matrix forming the polishing layer, the polymer matrix having a tensile strength, and fluoropolymer embedded in the polymeric matrix the fluoropolymer particles having a tensile strength lower than the tensile strength of the polymeric matrix, the polishing pad having a bulk fluorine concentration;
applying a slurry to the polymer-polymer composite polishing pad, the slurry containing cationic particles, the slurry including cationic particles for increasing polishing removal rate;
conditioning the polymer-polymer composite polishing pad with an abrasive to cut the polymer-polymer composite polishing pad; and
rubbing the cut polymer-polymer composite polishing pad against the substrate to form a thin film on the polishing surface, the thin film having a fluorine concentration measured by x-ray photoelectron spectroscopy in atomic percent at a penetration depth of 1 to 10 nm of at least twenty percent higher than the bulk fluorine concentration measured with energy-dispersion X-ray spectroscopy at a penetration depth of 1 to 10 μm and to polish or planarize the substrate with the thin film on the polishing surface.
7. The polishing or planarizing method of claim 6 wherein the slurry includes abrasive particles having a positive zeta potential and polishing or planarizing occurs with the fluoropolymer particles having a zeta potential that is more negative than the polymer matrix.
8. The polishing or planarizing method of claim 6 wherein the polishing or planarizing occurs with the slurry containing ceria particles and at a pH below the isoelectric pH of the ceria particles to increase substrate removal rate.
9. The polishing or planarizing method of claim 6 wherein the polishing or planarizing occurs with the slurry containing ceria particles and at a pH below the isoelectric pH of the ceria particles to decrease polishing defects.
10. The polishing or planarizing method of claim 6 wherein the polishing or planarizing occurs with a cationic slurry where the fluoropolymer increases friction between the polymer-polymer composite polishing pad and the substrate to increase substrate removal rate.