IP Library Granted Patent US 11,638,978
Granted Patent B2
US 11,638,978 · App. 16/435,990 · Granted May 2, 2023

Low-debris fluopolymer composite CMP polishing pad

Inventors: Nan-Rong Chiou (Wilmington, DE); Joseph So (Wilmington, DE); Mohammad T. Islam (New Catle, DE); Matthew R. Gadinski (Newark, DE); Youngrae Park (Wilmington, DE); George C. Jacob (Newark, DE)
Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
B24B37/24B24B37/0056B24B37/22C08F214/262C08L27/18C09G1/02H01L21/3212
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Quick Facts
Patent No.
US 11,638,978
App. No.
16/435,990
Granted
May 2, 2023
Kind
B2
Abstract

The invention provides a polymer-polymer composite polishing pad useful for polishing or planarizing a substrate of at least one of semiconductor, optical and magnetic substrates. The polymer-polymer composite polishing pad includes a polishing layer having a polishing surface for polishing or planarizing the substrate; a polymeric matrix forming the polishing layer and including gas-filled or liquid-filled polymeric microelements; and fluoropolymer particles embedded in the polymeric matrix. The fluoropolymer particles have a tensile strength lower than the tensile strength of the polymeric matrix wherein diamond abrasive materials cut the fluoropolymer to form a reduced number of pad debris particles in the 1 μm to 10 μm size range.

Claims (16)

1. A polymer-polymer composite polishing pad useful for polishing or planarizing a substrate of at least one of semiconductor, optical and magnetic substrates, the polymer-polymer composite polishing pad comprising the following:

a polishing layer having a polishing surface for polishing or planarizing the substrate;

a polymeric matrix forming the polishing layer, the polymer matrix having a tensile strength, the polymer matrix including gas-filled or liquid-filled polymeric microelements; and

fluoropolymer particles embedded in the polymeric matrix between the gas-filled or liquid-filled polymeric microelements, the fluoropolymer particles having a tensile strength lower than the tensile strength of the polymeric matrix wherein diamond abrasive materials cut the fluoropolymer to form a reduced number of pad debris particles in the 1 μm to 10 μm size range.

2. The polymer-polymer composite of claim 1 wherein the fluoropolymer particles embedded in the polymeric matrix represents 2 to 30 volume percent of the polymer-polymer composite polishing pad.

3. The polymer-polymer composite of claim 1 wherein the fluoropolymer has a more negative zeta potential than the polymeric matrix as measured at a pH 7 in distilled water, for preferential attraction of positively charged abrasive particles.

4. The polymer-polymer composite of claim 1 wherein the fluoropolymer particles attracts positively charged particles from a cationic particle slurry for increasing polishing removal rate when using cationic charged abrasive particles.

5. The polymer-polymer composite of claim 1 wherein the fluoropolymer particles attract negatively charged particles from an anionic particle slurry for increasing polishing removal rate when using anionic charged abrasive particles.

6. A polymer-polymer composite polishing pad useful for polishing or planarizing a substrate of at least one of semiconductor, optical and magnetic substrates, the polymer-polymer composite polishing pad comprising the following:

a polishing layer having a polishing surface for polishing or planarizing the substrate;

a polymeric matrix forming the polishing layer, the polymer matrix having a tensile strength, the polymer matrix including gas-filled or liquid-filled polymeric microelements; and

fluoropolymer particles embedded in the polymeric matrix between the gas-filled or liquid-filled polymeric microelements, the fluoropolymer particles having an average particle size less than the average spacing of the polymeric microelements, the fluoropolymer particles having a tensile strength lower than the tensile strength of the polymeric matrix wherein diamond abrasive materials cut the fluoropolymer to form a reduced number of pad debris particles in the 1 μm to 10 μm size range.

7. The polymer-polymer composite of claim 6 wherein the fluoropolymer particles embedded in the polymeric matrix represents 2 to 30 volume percent of the polymer-polymer composite polishing pad.

8. The polymer-polymer composite of claim 6 wherein the fluoropolymer has a more negative zeta potential than the polymeric matrix as measured at a pH 7 in distilled water, for preferential attraction of positively charged abrasive particles.

9. The polymer-polymer composite of claim 6 wherein the fluoropolymer particles attract positively charged particles from a cationic particle slurry for increasing polishing removal rate when using cationic charged abrasive particles.

10. The polymer-polymer composite of claim 6 wherein the fluoropolymer particles attract negatively charged particles from an anionic particle slurry for increasing polishing removal rate when using anionic charged abrasive particles.

Assignments (4)
SECURITY INTEREST Recorded Nov 3, 2025
From: QNITY ELECTRONICS, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 073515/0243 →
SECURITY INTEREST Recorded Nov 3, 2025
From: QNITY ELECTRONICS, INC.
To: U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
Reel/Frame 073517/0298 →
CHANGE OF NAME Recorded Oct 29, 2024
From: ROHM & HAAS ELECTRONIC MATERIALS CMP HOLDINGS INC.
To: DUPONT ELECTRONIC MATERIALS HOLDING, INC.
Reel/Frame 069274/0160 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 27, 2019
From: CHIOU, NAN-RONG; SO, JOSEPH; ISLAM, MOHAMMAD T.; GADINSKI, MATTHEW R.; PARK, YOUNGRAE; JACOB, GEORGE C.
To: ROHM AND HAAS ELECTRONIC MATERIALS CMP HOLDINGS, INC.
Reel/Frame 050177/0902 →