Integrated gate driver
A method is presented for forming a semiconductor device. The method may include forming a first gate structure on a first portion of a semiconductor material located on a surface of an insulating substrate, the first gate structure including a first sacrificial layer and a second sacrificial layer and forming a second gate structure on a second portion of the semiconductor material located on the surface of the insulating substrate, the second gate structure including a third sacrificial layer. The method further includes etching the first and second dielectric sacrificial layers to create a first contact region within the first gate structure and etching the third dielectric sacrificial layer to create a second contact region within the second gate structure. The method further includes forming silicide in at least the first and second contact regions of the first and second gate structures, respectively.
1. A gate driver circuit, comprising:
input transistors;
an integrating resistor and capacitor connected to the input transistors, the capacitor driven by a depletion mode metal oxide semiconductor field effect transistor (MOSFET);
resetting transistors;
a level shifting capacitor and diode, the diode driven by a heterojunction field effect transistor (HJFET); and
a pass transistor driven by a two-stage clock.
2. The gate driver circuit of claim 1 , wherein a gate terminal of the depletion mode MOSFET is used as a first terminal of the capacitor and either or both a drain terminal and source terminal of the depletion mode MOSFET are used as a second terminal of the capacitor.
3. The gate driver circuit of claim 1 , wherein a gate terminal of the HJFET is used as a first terminal of the diode and either or both a drain terminal and source terminal of the HJFET are used as a second terminal of the diode.
4. The gate driver circuit of claim 1 , wherein the depletion mode MOSFET includes a first sacrificial layer and a hydrogenated amorphous silicon layer.
5. The gate driver circuit of claim 4 , wherein the HJFET includes an intrinsic layer, a doped layer, and a second sacrificial layer.
6. The gate driver circuit of claim 5 , wherein the first and second sacrificial layers of the depletion mode MOSFET and the HJFET are etched to create first and second contact regions within the depletion mode MOSFET and the HJFET, respectively, for receiving silicide.
7. The gate driver circuit of claim 6 , wherein input voltages and output voltages are voltage pulses in a range of about 4-8 Volts.
8. The gate driver circuit of claim 7 , wherein the integrating resistor is driven by applying a constant bias to a gate terminal of the depletion mode MOSFET or a gate terminal of the HJFET.
9. The gate driver circuit of claim 8 , wherein the gate driver circuit represents an Nth stage of a shift register, and the integrating resistor consumes power only when the Nth stage is active.
10. The gate driver circuit of claim 9 , wherein a row drive voltage generated by a (N+1)th stage is used for resetting the Nth stage.
11. A gate driver circuit representing an Nth stage of a shift register, the gate driver circuit comprising:
input transistors;
an integrating resistor and capacitor connected to the input transistors, the capacitor driven by a depletion mode metal oxide semiconductor field effect transistor (MOSFET); and
a level shifting capacitor and diode, the diode driven by a heterojunction field effect transistor (HJFET),
wherein a gate terminal of the depletion mode MOSFET is used as a first terminal of the capacitor and either or both a drain terminal and source terminal of the depletion mode MOSFET are used as a second terminal of the capacitor.
12. The gate driver circuit of claim 11 , wherein the depletion mode MOSFET is formed on a first portion of a semiconductor material located on a surface of an insulating substrate.
13. The gate driver circuit of claim 12 , wherein the depletion mode MOSFET includes a first sacrificial layer and a first metal layer.
14. The gate driver circuit of claim 13 , wherein the HJFET is formed on a second portion of the semiconductor material located on the surface of the insulating substrate.
15. The gate driver circuit of claim 14 , wherein the HJFET includes an intrinsic layer, a doped hydrogenated silicon layer, and a second sacrificial layer, the intrinsic layer directly contacting the second portion of the semiconductor material.
16. The gate driver circuit of claim 15 , wherein the first and second sacrificial layers of the depletion mode MOSFET and the HJFET are etched to create first and second contact regions within the depletion mode MOSFET and the HJFET, respectively, for receiving silicide.
17. The gate driver circuit of claim 11 , wherein a gate terminal of the HJFET is used as a first terminal of the diode and either or both a drain terminal and source terminal of the HJFET are used as a second terminal of the diode.
18. The gate driver circuit of claim 11 , wherein an output of an (N+1)th stage, V out (N+1), is used to reset the Nth stage.
19. The gate driver circuit of claim 11 , wherein a row drive voltage generated by an (N+1)th stage, V select (N+1), is used for resetting the Nth stage instead of V out (N+1).
20. The gate driver circuit of claim 11 , wherein, if overlapping clock signals are used, both V out (N+1) or V select (N+1) are used for generating substantially synchronized row drive voltages.