Vehicle, display device and manufacturing method for a semiconductor device
To provide a semiconductor device in which a layer to be peeled is attached to a base having a curved surface, and a method of manufacturing the same, and more particularly, a display having a curved surface, and more specifically a light-emitting device having a light emitting element attached to a base with a curved surface. A layer to be peeled, which contains a light emitting element furnished to a substrate using a laminate of a first material layer which is a metallic layer or nitride layer, and a second material layer which is an oxide layer, is transferred onto a film, and then the film and the layer to be peeled are curved, to thereby produce a display having a curved surface.
1. A semiconductor device comprising a peeled layer, the peeled layer comprising:
a pixel portion comprising a first transistor; and
a driver circuit comprising a second transistor,
wherein the peeled layer is capable of curving in a first direction,
wherein a channel length direction of each of the first transistor and the second transistor is a second direction,
wherein the first direction is perpendicular to the second direction, and
wherein the second direction is a direction from one of a source and a drain of the first transistor to the other of the source and the drain of the first transistor.
2. The semiconductor device according to claim 1 , wherein the peeled layer is bonded to a plastic substrate.
3. The semiconductor device according to claim 1 , wherein the pixel portion further comprises a light-emitting element electrically connected to the first transistor.
4. A semiconductor device comprising a peeled layer, the peeled layer comprising:
a pixel portion comprising a first transistor; and
a driver circuit comprising a second transistor,
wherein the peeled layer is capable of curving in a first direction,
wherein a channel length direction of each of the first transistor and the second transistor is a second direction,
wherein the first direction is perpendicular to the second direction,
wherein the second direction is a direction from one of a source and a drain of the first transistor to the other of the source and the drain of the first transistor,
wherein the first transistor and the second transistor comprise a first semiconductor layer and a second semiconductor layer, respectively, and
wherein the first semiconductor layer and the second semiconductor layer are capable of curving the first direction.
5. The semiconductor device according to claim 4 , wherein the peeled layer is bonded to a plastic substrate.
6. The semiconductor device according to claim 4 , wherein the pixel portion further comprises a light-emitting element electrically connected to the first transistor.