IP Library › Granted Patent US 10,706,801

Granted Patent B2

US 10,706,801 · App. 16/447,357 · Granted Jul 7, 2020

Liquid crystal display device and electronic device including the same

Inventor: Atsushi Umezaki (Kanagawa, JP)

Assignee: Semiconductor Energy Laboratory Co., Ltd.

G09G3/3674 G02F1/13454 G02F1/136286 G09G3/3677 G11C19/28 H01L23/528 H01L29/786 G02F2001/13606 G02F2201/124 G09G3/3688 G09G2300/0408 G09G2300/0417 G09G2310/0286 H01L27/1214 H01L29/7869 H01L2924/0002

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Quick Facts

Patent No.: US 10,706,801
App. No.: 16/447,357
Granted: Jul 7, 2020
Kind: B2

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Abstract

A driver circuit includes first to third transistors, a first circuit, and a second circuit. In the first transistor, a first terminal is electrically connected to a second wiring, a second terminal is electrically connected to a first wiring, and a gate is electrically connected to the second circuit and a first terminal of the third transistor. In the second transistor, a first terminal is electrically connected to the first wiring, a second terminal is electrically connected to a sixth wiring, a gate is electrically connected to the first circuit and a gate of the third transistor. A second terminal of the third transistor is electrically connected to the sixth wiring. The first circuit is electrically connected to a third wiring, a fourth wiring, a fifth wiring, and the sixth wiring. The second circuit is electrically connected to the first wiring, the second wiring, and the sixth wiring.

Claims (49)

1. A semiconductor device comprising:

a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, a seventh transistor, an eighth transistor, a ninth transistor, a tenth transistor, an eleventh transistor, a twelfth transistor, a thirteenth transistor, and a fourteenth transistor,

wherein one of a source electrode and a drain electrode of the first transistor is electrically connected to one of a source electrode and a drain electrode of the fourth transistor, one of a source electrode and a drain electrode of the eleventh transistor, one of a source electrode and a drain electrode of the twelfth transistor, and one of a source electrode and a drain electrode of the fourteenth transistor,

wherein a gate electrode of the first transistor is electrically connected to one of a source electrode and a drain electrode of the second transistor, one of a source electrode and a drain electrode of the third transistor, one of a source electrode and a drain electrode of the fifth transistor, a gate electrode of the seventh transistor, a gate electrode of the ninth transistor, one of a source electrode and a drain electrode of the tenth transistor, and one of a source electrode and a drain electrode of the thirteenth transistor,

wherein the other of the source electrode and the drain electrode of the second transistor is electrically connected to a gate electrode of the second transistor, and the other of the source electrode and the drain electrode of the third transistor,

wherein a gate electrode of the third transistor is electrically connected to one of a source electrode and a drain electrode of the sixth transistor, one of a source electrode and a drain electrode of the eighth transistor, a gate electrode of the eighth transistor, and a gate electrode of the twelfth transistor,

wherein a gate electrode of the fourth transistor is electrically connected to a gate electrode of the fifth transistor, the other of the source electrode and the drain electrode of the sixth transistor, and one of a source electrode and a drain electrode of the seventh transistor,

wherein a gate electrode of the sixth transistor is electrically connected to the other of the source electrode and the drain electrode of the eighth transistor, and one of a source electrode and a drain electrode of the ninth transistor,

wherein a gate electrode of the tenth transistor is electrically connected to a gate electrode of the eleventh transistor,

wherein a gate electrode of the thirteenth transistor is electrically connected to a gate electrode of the fourteenth transistor.

2. A semiconductor device comprising:

wherein one of a source electrode and a drain electrode of the first transistor is electrically connected to one of a source electrode and a drain electrode of the fourth transistor, one of a source electrode and a drain electrode of the eleventh transistor, one of a source electrode and a drain electrode of the twelfth transistor, one of a source electrode and a drain electrode of the fourteenth transistor, and a first gate line,

wherein the other of the source electrode and the drain electrode of the first transistor is electrically connected to a first clock signal line,

wherein the other of the source electrode and the drain electrode of the second transistor is electrically connected to a gate electrode of the second transistor, the other of the source electrode and the drain electrode of the third transistor, and a second gate line,

wherein a gate electrode of the tenth transistor is electrically connected to a gate electrode of the eleventh transistor, and a third gate line,

wherein a gate electrode of the thirteenth transistor is electrically connected to a gate electrode of the fourteenth transistor,

wherein the other of the source electrode and the drain electrode of the fourth transistor is electrically connected to the other of the source electrode and the drain electrode of the fifth transistor, the other of the source electrode and the drain electrode of the seventh transistor, the other of the source electrode and the drain electrode of the ninth transistor, the other of the source electrode and the drain electrode of the tenth transistor, the other of the source electrode and the drain electrode of the eleventh transistor, the other of the source electrode and the drain electrode of the twelfth transistor, the other of the source electrode and the drain electrode of the thirteenth transistor, the other of the source electrode and the drain electrode of the fourteenth transistor, and a power supply line.

3. A semiconductor device comprising:

wherein one of a source electrode and a drain electrode of the first transistor is electrically connected to one of a source electrode and a drain electrode of the fourth transistor, one of a source electrode and a drain electrode of the eleventh transistor, one of a source electrode and a drain electrode of the twelfth transistor, one of a source electrode and a drain electrode of the fourteenth transistor, and a first gate line,

wherein the other of the source electrode and the drain electrode of the first transistor is electrically connected to a first clock signal line,

wherein a gate electrode of the tenth transistor is electrically connected to a gate electrode of the eleventh transistor, and a third gate line,

wherein a gate electrode of the thirteenth transistor is electrically connected to a gate electrode of the fourteenth transistor, and a signal line to which a reset signal is input,

4. A semiconductor device comprising:

wherein one of a source electrode and a drain electrode of the first transistor is electrically connected to one of a source electrode and a drain electrode of the fourth transistor, one of a source electrode and a drain electrode of the eleventh transistor, one of a source electrode and a drain electrode of the twelfth transistor, one of a source electrode and a drain electrode of the fourteenth transistor, and a first gate line,

wherein the other of the source electrode and the drain electrode of the first transistor is electrically connected to a first clock signal line,

wherein a gate electrode of the tenth transistor is electrically connected to a gate electrode of the eleventh transistor, and a third gate line,

wherein a gate electrode of the thirteenth transistor is electrically connected to a gate electrode of the fourteenth transistor,

wherein, in the first transistor, an area where the one of the source electrode and the drain electrode overlaps with the gate electrode is larger than an area where the other of the source electrode and the drain electrode overlaps with the gate electrode,

wherein, in the second transistor, an area where the one of the source electrode and the drain electrode overlaps with the gate electrode is smaller than an area where the other of the source electrode and the drain electrode overlaps with the gate electrode,

wherein, in the third transistor, an area where the one of the source electrode and the drain electrode overlaps with the gate electrode is smaller than an area where the other of the source electrode and the drain electrode overlaps with the gate electrode.

Priority Claims (1)

JP 2009-007419 · Jan 16, 2009 · national

Continuity (5)

Continuation 15807119 · Nov 8, 2017

Continuation 14285819 · May 23, 2014

Continuation 13742662 · Jan 16, 2013

Continuation 12685439 · Jan 11, 2010

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