Semiconductor device having a lid with through-holes
In one example, a semiconductor device, includes a substrate having a top side and a conductor on the top side of the substrate, an electronic device on the top side of the substrate connected to the conductor on the top side of the substrate via an internal interconnect, a lid covering a top side of the electronic device, and a thermal material between the top side of the electronic device and the lid, wherein the lid has a through-hole. Other examples and related methods are also disclosed herein.
1. A semiconductor device, comprising:
a substrate having a top side and a conductor on the top side of the substrate;
an electronic device on the top side of the substrate connected to the conductor on the top side of the substrate via an internal interconnect;
a lid covering a top side of the electronic device; and
a thermal material between the top side of the electronic device and the lid, wherein the lid has a through-hole;
wherein the top side of the electronic device comprises patternings, and a portion of the thermal material is disposed between the patternings; and
further comprising:
a dam at a perimeter of the electronic device and contacting the thermal material.
2. The semiconductor device of claim 1 , further comprising a perimeter structure between the lid and the top side of the substrate to secure the lid to the substrate.
3. The semiconductor device of claim 1 , wherein a portion of the lid is secured to the top side of the substrate.
4. The semiconductor device of claim 1 , wherein the patternings comprise a trench pattern.
5. The semiconductor device of claim 1 , wherein the patternings comprise a parallel pattern.
6. The semiconductor device of claim 1 , wherein the patternings comprise a zig-zag pattern to distribute the thermal material across the electronic device when the thermal material is introduced into the patternings via the through-hole before the through-hole is filled.
7. The semiconductor device of claim 1 , wherein a bottom side of the lid comprises lid patternings, and a portion of the thermal material is disposed between the lid patternings.
8. The semiconductor device of claim 1 , wherein the through-hole is filled.
9. The semiconductor device of claim 1 , wherein the thermal material comprises a coolant medium that can be circulated through the through-hole via a cooling pipe.
10. The semiconductor device of claim 1 , wherein the substrate comprises a redistribution layer (RDL) substrate.
11. The semiconductor device of claim 1 , further comprising an adhesive between the lid and the top side of the electronic device, wherein the thermal material is in an internal region between the adhesive and the top side of the electronic device.
12. The semiconductor device of claim 1 , wherein the dam is at a periphery of the patternings.
13. The semiconductor device of claim 1 , wherein the dam comprises an adhesive contacting a bottom side of the lid.
14. The semiconductor device of claim 1 , wherein the dam contains the thermal material within the perimeter of electronic device.
15. The semiconductor device of claim 1 , wherein the patternings comprise a crest having a length that is less than half a length of the electronic device.
16. A method to manufacture a semiconductor device, comprising:
providing patternings on a backside of an electronic device;
placing the electronic device on a top side of a substrate, wherein the electronic device contacts a conductor on the top side of the substrate via an internal interconnect;
providing a lid over the electronic device;
injecting a thermal material into a through-hole of the lid; and
filling the through-hole to seal the thermal material between the lid and the top side of the electronic device;
wherein a portion of the thermal material is disposed between the patternings; and
further comprising:
providing a dam at a perimeter of the electronic device and contacting the thermal material.
17. The method of claim 16 , further comprising providing a perimeter structure on the top side of the substrate at a periphery of the electronic device, wherein the lid is adhered to the perimeter structure and the perimeter structure is adhered to the top side of the substrate.
18. The method of claim 16 , further comprising adhering a portion of the lid to the top side of the substrate.
19. The method of claim 16 , further comprising providing an encapsulant on the top side of the substrate at a periphery of the electronic device, wherein a portion of the lid covers a portion of the encapsulant.