Ultrathin atomic layer deposition film accuracy thickness control
Methods for depositing films by atomic layer deposition using cyclic siloxane precursors are provided. Methods involve exposing the substrate to a cyclic siloxane precursor during operation of an atomic layer deposition cycle to form silicon oxide.
1. A method of depositing a silicon-containing film on a substrate, the method comprising:
providing the substrate;
exposing the substrate to a silicon-containing precursor selected from the group consisting of cyclic siloxanes;
exposing the substrate to a reactant to react with the silicon-containing precursor and form at least a portion of a silicon-containing film; and
alternating between exposing of the substrate to the silicon-containing precursor and the exposing of the substrate to the reactant in cycles until a desired thickness of the silicon-containing film is deposited,
wherein the exposing of the substrate to the silicon-containing precursor and exposing of the substrate to the reactant is performed at a temperature greater than about 400° C.
2. The method of claim 1 , wherein a plasma is ignited during the exposing of the substrate to the reactant.
3. The method of claim 2 , wherein the plasma is generated in a chamber housing the substrate.
4. The method of claim 2 , wherein the plasma is generated remotely.
5. The method of claim 1 , wherein the silicon-containing film comprises silicon oxide.
6. The method of claim 1 , wherein the silicon-containing film comprises oxygen-doped silicon carbide.
7. The method of claim 1 , wherein the silicon-containing precursor is selected from the group consisting of 2,4,6,8-tetramethylcyclotetrasiloxane (TMCTS), heptamethylcyclotetrasiloxane (HMCTS), and silsesquioxane.
8. The method of claim 1 , wherein the silicon-containing precursor is a cyclotetrasiloxane.
9. The method of claim 1 , wherein the silicon-containing precursor is a cyclotrisiloxane.
10. The method of claim 1 , wherein the silicon-containing precursor is a cyclopentasiloxane.
11. The method of claim 1 , wherein a chamber housing the substrate is purged between exposing the substrate to the silicon-containing precursor and exposing the substrate to the reactant.