Method for manufacturing a semiconductor device having a dummy section
View Patent ↗There is provided a semiconductor device comprising a semiconductor substrate having an active area in which a plurality of active elements are formed, and a non-active area excepting the active area; at least one electrode pad electrically connected to any of the active elements. At least one Through Silicon VIA electrode is formed, being electrically connected to the electrode pad by way of the non-active area. The non-active area has an insulating region obtained by forming an insulating film on the semiconductor substrate, and a dummy section obtained by leaving a base material of the semiconductor substrate in the insulating region. The dummy section is provided in a position where an outer edge of the Through Silicon VIA electrode does not intersect with the boundary between the insulating region and the dummy section.
1. A method for manufacturing a semiconductor device, comprising:
providing a semiconductor substrate having an obverse surface and a reverse surface opposite to the obverse surface;
forming a shallow-trench-isolation region of an insulating film on the obverse surface;
forming, in the shallow-trench-isolation region, a plurality of island-shaped dummy portions and a second dummy portion which is surrounded with the island-shaped dummy portions and has a distance across being larger than a distance across each of the island-shaped dummy portions, wherein each of the island-shaped dummy portions and the second dummy portion has a top face coplanar with a top face of the shallow-trench-isolation region and comprises a same material as the semiconductor substrate;
forming a plurality of active elements on the obverse surface to define an element-absence area provided adjacent to the active elements on the obverse surface, the element-absence area being free of any of the active elements;
forming an interlayer insulating film on and over the active elements and the element-absence area;
forming an electrode pad so as to be buried inside the interlayer insulating film and electrically connected to one or more of the active elements; and
forming a Through Silicon VIA hole penetrating within an outer edge of the second dummy portion from the reverse surface of the semiconductor substrate to the obverse surface to form a Through Silicon VIA electrode to be electrically connected to the electrode pad;
wherein the second dummy portion is formed to be a ring-shaped dummy portion surrounding the Through Silicon VIA hole on the obverse surface so that an inner diameter of the ring-shaped dummy portion is larger than an outer diameter of the Through Silicon VIA hole and the ring-shaped dummy portion is separated by a shallow trench isolation region from the Through Silicon VIA hole.
2. The method for manufacturing the semiconductor device of claim 1 , wherein the Through Silicon VIA hole has a first aperture part on the electrode pad and a second aperture part on the reverse surface of the semiconductor substrate, the second aperture part being larger than the first aperture part.