OLED display and OLED display device with plurality of light-absorbing bodies in planarization layer
View Patent ↗An organic light emitting diode (OLED) display panel and an OLED display device include a substrate, a thin film transistor array function layer disposed on the substrate; a planarization layer disposed on the thin film transistor array function layer; an anode electrode disposed on the planarization layer; and a pixel definition layer disposed on the anode electrode. The planarization layer and/or the pixel definition layer include a plurality of light-absorbing bodies used for absorbing incident light emitted from outside the OLED display panel. The light-absorbing bodies are doped in the planarization layer and/or the pixel definition layer.
1. An organic light emitting diode (OLED) display panel, comprising:
a substrate;
a thin film transistor array function layer disposed on the substrate;
a planarization layer disposed on the thin film transistor array function layer;
an anode electrode disposed on the planarization layer; and
a pixel definition layer disposed on the anode electrode,
wherein at least one of the planarization layer and the pixel definition layer comprise a plurality of light-absorbing bodies used for absorbing incident light emitted from outside the OLED display panel, the light-absorbing bodies are doped in the at least one of the planarization layer and the pixel definition layer;
a material of the light-absorbing bodies is one or at least two selected from a group consisting of carbon nanotube, nickel-iron alloy, and benzothiophene chemicals; and
when the planarization layer is doped with the light-absorbing bodies, a particle size of the light-absorbing bodies is less than a thickness of the planarization layer; when the pixel definition layer is doped with the light-absorbing bodies, the particle size of the light-absorbing bodies is less than a thickness of the pixel definition layer.
2. The OLED display panel as claimed in claim 1 , wherein when the planarization layer is doped with the light-absorbing bodies, the particle size of the light-absorbing bodies is less than or equal to one third thickness of the planarization layer.
3. The OLED display panel as claimed in claim 1 , wherein the light-absorbing bodies are distributed uniformly in the at least one of the planarization layer and the pixel definition layer.
4. The OLED display panel as claimed in claim 1 , wherein when the planarization layer is doped with the light-absorbing bodies, a doping ratio of the light-absorbing bodies and the planarization layer is less than or equal to 35 to 100; when the pixel definition layer is doped with the light-absorbing bodies, a doping ratio of the light-absorbing bodies and the pixel definition layer is less than or equal to 35 to 100.
5. The OLED display panel as claimed in claim 1 , wherein the thin film transistor array function layer comprises an active layer, a first insulating layer, a first gate metal layer, a second insulating layer, a second gate metal layer, an interlayer dielectric layer, and a source/drain metal layer on the substrate in sequence.
6. An organic light emitting diode (OLED) display panel, comprising:
a substrate;
a thin film transistor array function layer disposed on the substrate;
a planarization layer disposed on the thin film transistor array function layer;
an anode electrode disposed on the planarization layer; and
a pixel definition layer disposed on the anode electrode,
wherein at least one of the planarization layer and the pixel definition layer comprise a plurality of light-absorbing bodies used for absorbing incident light emitted from outside the OLED display panel, the light-absorbing bodies are doped in the at least one of the planarization layer and the pixel definition layer,
wherein a material of the light-absorbing bodies is one or at least two selected from a group consisting of carbon nanotube, nickel-iron alloy, and benzothiophene chemicals.
7. The OLED display panel as claimed in claim 6 , wherein when the planarization layer is doped with the light-absorbing bodies, a particle size of the light-absorbing bodies is less than a thickness of the planarization layer; when the pixel definition layer is doped with the light-absorbing bodies, the particle size of the light-absorbing bodies is less than a thickness of the pixel definition layer.
8. The OLED display panel as claimed in claim 7 , wherein when the planarization layer is doped with the light-absorbing bodies, the particle size of the light-absorbing bodies is less than one third thickness of the planarization layer.
9. The OLED display panel as claimed in claim 6 , wherein the light-absorbing bodies are distributed uniformly in the at least one of the planarization layer and the pixel definition layer.
10. The OLED display panel as claimed in claim 6 , wherein when the planarization layer is doped with the light-absorbing bodies, a doping ratio of the light-absorbing bodies and the planarization layer is less than or equal to 35 to 100; when the pixel definition layer is doped with the light-absorbing bodies, a doping ratio of the light-absorbing bodies and the pixel definition layer is less than or equal to 35 to 100.
11. The OLED display panel as claimed in claim 6 , wherein the thin film transistor array function layer comprises an active layer, a first insulating layer, a first gate metal layer, a second insulating layer, a second gate metal layer, an interlayer dielectric layer, and a source/drain metal layer on the substrate in sequence.
12. An organic light emitting diode (OLED) display device, comprising an OLED display panel and the OLED display panel comprising:
a substrate;
a thin film transistor array function layer disposed on the substrate;
a planarization layer disposed on the thin film transistor array function layer;
an anode electrode disposed on the planarization layer; and
a pixel definition layer disposed on the anode electrode,
wherein at least one of the planarization layer and the pixel definition layer comprise a plurality of light-absorbing bodies used for absorbing incident light emitted from outside the OLED display panel, the light-absorbing bodies are doped in the at least one of the planarization layer and the pixel definition layer,
wherein a material of the light-absorbing bodies is one or at least two selected from a group consisting of carbon nanotube, nickel-iron alloy, and benzothiophene chemicals.
13. The OLED display device as claimed in claim 12 , wherein when the planarization layer is doped with the light-absorbing bodies, a particle size of the light-absorbing bodies is less than a thickness of the planarization layer; when the pixel definition layer is doped with the light-absorbing bodies, the particle size of the light-absorbing bodies is less than a thickness of the pixel definition layer.
14. The OLED display device as claimed in claim 13 , wherein when the planarization layer is doped with the light-absorbing bodies, the particle size of the light-absorbing bodies is less than one third thickness of the planarization layer.
15. The OLED display device as claimed in claim 12 , wherein when the planarization layer is doped with the light-absorbing bodies, a doping ratio of the light-absorbing bodies and the planarization layer is less than or equal to 35 to 100; when the pixel definition layer is doped with the light-absorbing bodies, a doping ratio of the light-absorbing bodies and the pixel definition layer is less than or equal to 35 to 100.
16. The OLED display device as claimed in claim 12 , wherein the light-absorbing bodies are distributed uniformly in the at least one of the planarization layer and the pixel definition layer.
17. The OLED display device as claimed in claim 12 , wherein the thin film transistor array function layer comprises an active layer, a first insulating layer, a first gate metal layer, a second insulating layer, a second gate metal layer, an interlayer dielectric layer, and a source/drain metal layer on the substrate in sequence.