Display device and method of fabricating the same
A display device and a method of fabricating the same are provided. The display device comprises a substrate, a via layer on the substrate, an anode electrode on the via layer, a pixel-defining film on the via layer and the anode electrode, and exposing a portion of the anode electrode, an organic layer on the anode electrode, and a cathode electrode on the organic layer, wherein the pixel-defining film comprises a first region containing boron, and a second region other than the first region.
1 . A display device comprising:
a substrate;
a via layer on the substrate;
an anode electrode on the via layer;
a pixel-defining film on the via layer and the anode electrode, and exposing a portion of the anode electrode;
an organic layer on the anode electrode; and
a cathode electrode on the organic layer,
wherein the pixel-defining film comprises a first region comprising boron, and a second region other than the first region, and
wherein the first region forms a concentration gradient in which a concentration of the boron decreases from a surface of the pixel-defining film to the second region.
2 . The display device of claim 1 , wherein the first region is adjacent to the cathode electrode, and the second region is adjacent to the anode electrode.
3 . The display device of claim 1 , wherein the first region is not in contact with a top surface of the via layer, and the second region is in contact with the top surface of the via layer.
4 . The display device of claim 1 , wherein the first region covers the second region.
5 . The display device of claim 1 , wherein a thickness of the second region is larger than a thickness of the first region.
6 . The display device of claim 1 , wherein a thickness of the first region is in a range of 0.005% to 0.025% of a thickness of the pixel-defining film.
7 . The display device of claim 1 , wherein an optical density of the pixel-defining film is in a range of 0.7 to 1.
8 . The display device of claim 1 , wherein the pixel-defining film has an opening exposing a portion of the anode electrode, and
the first region comprises an inner circumferential surface of the opening.
9 . The display device of claim 1 , wherein the first region is parallel to a top surface of the via layer.
10 . The display device of claim 1 , wherein the pixel-defining film has an opening exposing a portion of the anode electrode, and
the second region comprises at least part of an inner circumferential surface of the opening.
11 . A method of fabricating a display device, the method comprising:
forming a via layer on a substrate;
forming an anode electrode on the via layer;
forming an organic material layer on the via layer and the anode electrode;
patterning the organic material layer to form a pixel-defining film exposing the anode electrode;
doping the pixel-defining film with boron to form a first region of the pixel-defining film comprising the boron, and a second region of the pixel-defining film other than the first region, the first region forming a concentration gradient in which a concentration of the boron decreases from a surface of the pixel-defining film to the second region;
forming an organic layer on the anode electrode; and
forming a cathode electrode on the organic layer.
12 . The method of claim 11 , wherein the second region is not doped with the boron.
13 . The method of claim 11 , wherein a dose of the boron is in a range of 5E15/cm 2 to 1E16/cm 2 .
14 . The method of claim 11 , wherein the doping the pixel-defining film with boron comprises doping the boron at an acceleration voltage of 10 KeV to 20 KeV.
15 . A method of fabricating a display device, the method comprising:
forming a via layer on a substrate;
forming an anode electrode on the via layer;
forming an organic material layer on the via layer and the anode electrode;
doping the organic material layer with boron to form a first region of the organic material layer comprising the boron, and a second region of the organic material layer other than the first region, the first region forming a concentration gradient in which a concentration of the boron decreases from a surface of the organic material layer to the second region;
patterning the organic material layer to form a pixel-defining film exposing the anode electrode;
forming an organic layer on the anode electrode; and
forming a cathode electrode on the organic layer.
16 . The method of claim 15 , wherein the second region is not doped with the boron.
17 . The method of claim 16 , wherein the first region is formed parallel to a top surface of the via layer.
18 . The method of claim 15 , wherein a dose of the boron is in a range of 5E15/cm 2 to 1E16/cm 2 .
19 . The method of claim 15 , wherein the doping the organic material layer with boron comprises doping the boron at an acceleration voltage of 10 KeV to 20 KeV.