Electronic chip with under-side power block

1. An electronic chip, comprising:

a power block, comprising:

a power source configured to provide power to components of the electronic chip; and

a relay circuit coupled to the power source and a ground plane;

a chip package having a first major side and a second major side, the power block secured to the second major side; the chip package comprising:

electrical connections, disposed on the second major side, to be secured with respect to a circuit board; and

interconnect circuitry, electrically coupling the power block to ground, comprising:

a plurality of conductive layers;

a plurality of insulating layers, individual ones of the plurality of insulating layers positioned between individual ones of the plurality of conductive layers;

a conductive through hole, electrically connecting a first pair of the plurality of conductive layers through a first one of the plurality of insulating layers with a through hole conductive material defining a first width and having a side wall perpendicular to the first and second major sides; and

a via, electrically connecting a second pair of the plurality of conductive layers through a second one of the plurality of insulating layers with a via conductive material defining a second width less than the first width, the via electrically coupling the conductive through hole with another one of the plurality of conductive layers different than the first pair of the plurality of conductive layers.

2. The electronic chip of claim 1 , wherein the conductive through hole is a mechanical drill through hole.

3. The electronic chip of claim 2 , wherein the mechanical drill through hole is a plated through hole.

4. The electronic chip of claim 2 , wherein the mechanical drill through hole is a coreless through hole.

5. The electronic chip of claim 2 , wherein the power block further comprises a power block interconnect, electrically coupled to the interconnect circuitry of the chip package, the power block interconnect comprising at least one power block conductive through hole.

6. The electronic chip of claim 1 , wherein the interconnect circuitry is gold-to-gold interconnect circuitry.

7. The electronic chip of claim 1 , further comprising:

a die, electrically coupled to the power source via the interconnect circuitry, and secured to the first major side.

8. A method, comprising:

forming a chip package having a first major side and a second major side, comprising:

forming an insulator;

forming interconnect circuitry embedded in the insulator, comprising:

a plurality of conductive layers;

a plurality of insulating layers, individual ones of the plurality of insulating layers positioned between individual ones of the plurality of conductive layers;

a conductive through hole, electrically connecting a first pair of the plurality of conductive layers through a first one of the plurality of insulating layers with a through hole conductive material defining a first width and having a side wall perpendicular to the first and second major sides; and

a via, electrically connecting a second pair of the plurality of conductive layers through a second one of the plurality of insulating layers with a via conductive material defining a second width less than the first width, the via electrically coupling the conductive through hole with another one of the plurality of conductive layers different than the first pair of the plurality of conductive layers;

securing a power block to the second major side and electrically coupling the power block to the interconnect circuitry, comprising:

a power source configured to provide power to components of the electronic chip; and

a relay circuit coupled to the power source and a ground plane; and

securing electrical connections to the second major side and electrically coupling the electrical connections to the interconnect circuitry.

9. The method of claim 8 , wherein forming the interconnect circuitry comprises mechanically drilling the conductive through hole, the conductive through hole being a mechanical drill through hole.

10. The method of claim 9 , wherein forming the interconnect circuitry comprises plating the mechanical drill through hole to form a plated through hole.

11. The method of claim 9 , wherein the mechanical drill through hole is a coreless through hole.

12. The method of claim 9 , wherein the power block further comprises a power block interconnect, and wherein electrically coupling the power block to the interconnect circuitry comprises electrically coupling the power block interconnect to the interconnect circuitry of the chip package, the power block interconnect comprising at least one power block conductive through hole.

13. The method of any claim 8 , wherein forming the interconnect circuitry comprises forming gold-to-gold interconnect circuitry.

14. The method of claim 8 , further comprising:

securing a die to the first major side and electrically coupling the die to the power source via the interconnect circuitry.

15. The method of claim 8 , further comprising milling the power block from a first size to a second size smaller than the first size, wherein securing the electrical connections comprises securing at least one of the electrical connections to a portion of the second major side previously occupied by the power block prior to milling.

16. A system, comprising:

a circuit board; and

an electronic chip, secured and electrically coupled to the circuit board, comprising:

a power block, comprising:

a power source configured to provide power to components of the electronic chip; and

a relay circuit coupled to the power source and a ground plane;

a chip package having a first major side facing away from the circuit board and a second major side facing the circuit board, the power block secured to the second major side, the chip package comprising:

electrical connections, disposed on the second major side, secured to the circuit board; and

interconnect circuitry, electrically coupling the power block to ground, comprising:

a plurality of conductive layers;

a plurality of insulating layers, individual ones of the plurality of insulating layers positioned between individual ones of the plurality of conductive layers;

a conductive through hole, electrically connecting a first pair of the plurality of conductive layers through a first one of the plurality of insulating layers with a through hole conductive material defining a first width and having a side wall perpendicular to the first and second major sides; and

a via, electrically connecting a second pair of the plurality of conductive layers through a second one of the plurality of insulating layers with a via conductive material defining a second width less than the first width, the via electrically coupling the conductive through hole with another one of the plurality of conductive layers different than the first pair of the plurality of conductive layers.

17. The electronic chip of claim 16 , wherein the conductive through hole is a mechanical drill through hole.

18. The electronic chip of claim 17 , wherein the mechanical drill through hole is a plated through hole.

19. The electronic chip of claim 17 , wherein the mechanical drill through hole is a careless through hole.

20. The electronic chip of claim 17 , wherein the power block further comprises a power block interconnect, electrically coupled to the interconnect circuitry of the chip package, the power block interconnect comprising at least one power block conductive through hole.