P-type SiC epitaxial wafer and production method therefor
A method of producing a p-type SiC epitaxial wafer, the method including: a step of setting an input raw material C/Si ratio, being a ratio between the C element and the Si element in a feedstock gas; and a step of obtaining a p-type SiC epitaxial wafer having an Al dopant concentration of at least 1×10 18 cm −3 by forming a p-type SiC epitaxial film on a substrate in a film-forming atmosphere comprising the feedstock gas, a Cl-based gas containing Cl in the molecule, and a dopant gas containing Al and C in the molecule, wherein the input raw material C/Si ratio is set based on a total gas C/Si ratio, being a ratio between the C element and the Si element in the film-forming atmosphere containing the C element included in the dopant gas, the input raw material C/Si ratio differs from the total gas C/Si ratio, and the input raw material C/Si ratio is 0.8 or less.
1 . A p-type SiC epitaxial wafer comprising a p-type SiC epitaxial film, wherein the p-type SiC epitaxial film has an Al dopant concentration of at least 1×10 18 cm −3 , and an in-plane uniformity of the dopant concentration of 25% or less,
the wafer has a diameter of at least six inches, and
the wafer has a triangular defect density of 0.1 cm −2 or less.
2 . A method of producing the p-type SiC epitaxial wafer comprising a p-type SiC epitaxial film according to claim 1 , wherein the p-type SiC epitaxial film has an Al dopant concentration of at least 1×10 18 cm −3 and an in-plane uniformity of the dopant concentration of 25% or less, the method comprising:
a step of setting an input raw material C/Si ratio, which is a ratio between C element and Si element in a feedstock gas,
a step of obtaining a p-type SiC epitaxial wafer having an Al dopant concentration of at least 1×10 18 cm −3 by forming a p-type SiC epitaxial film on a substrate in a film-forming atmosphere comprising the feedstock gas, a Cl-based gas containing Cl in the molecule, and a dopant gas containing Al and C in the molecule, and
a sub-step of setting the input raw material C/Si ratio based on a total gas C/Si ratio, being a ratio between the C element and the Si element in the film-forming atmosphere containing the C element included in the dopant gas, wherein
the input raw material C/Si ratio differs from the total gas C/Si ratio, and
the input raw material C/Si ratio is 0.8 or less.
3 . The method for producing a p-type SiC epitaxial wafer according to claim 2 , wherein the total gas C/Si ratio is at least 1.0.
4 . The method for producing a p-type SiC epitaxial wafer according to claim 2 , wherein the total gas C/Si ratio is at least 1.0 but not more than 2.1.
5 . The method for producing a p-type SiC epitaxial wafer according to claim 2 , wherein the Cl-based gas containing Cl in the molecule includes HCl.
6 . The method for producing a p-type SiC epitaxial wafer according to claim 2 , wherein, a Si-based feedstock gas in the feedstock gas contains Cl in the molecule.
7 . The method for producing a p-type SiC epitaxial wafer according to claim 2 , wherein the dopant gas containing Al and C in the molecule is trimethylaluminum.
8 . The method for producing a p-type SiC epitaxial wafer according to claim 2 , wherein at least 10% of the C element in the film-forming atmosphere originates from the dopant gas.
9 . The method for producing a p-type SiC epitaxial wafer according to claim 8 , wherein the feedstock gas does not contain the C element.
10 . The p-type SiC epitaxial wafer according to claim 1 , wherein the wafer has an in-plane uniformity of the dopant concentration of 10% or less.
11 . The p-type SiC epitaxial wafer according to claim 1 , wherein the in-plane uniformity of the dopant concentration is a value which is obtained by dividing a difference between a maximum dopant concentration value of the wafer and a minimum dopant concentration value of the wafer by an average dopant concentration value in an in-plane direction of the wafer, and multiplying the divided difference by 100.
12 . The p-type SiC epitaxial wafer according to claim 1 , wherein the in-plane uniformity of the dopant concentration is 18% or less.
13 . The p-type SiC epitaxial wafer according to claim 1 , wherein the in-plane uniformity of the dopant concentration is 10% or less.
14 . The p-type SiC epitaxial wafer according to claim 1 , wherein the in-plane uniformity of the dopant concentration is 7.7 to 20.5%.
15 . The p-type SiC epitaxial wafer according to claim 1 , wherein the in-plane uniformity of the dopant concentration is 7.7% or more.
16 . The p-type SiC epitaxial wafer according to claim 1 , wherein the p-type SiC epitaxial wafer includes a SiC single crystal substrate on which the p-type SiC epitaxial film has been directly formed.
17 . The p-type SiC epitaxial wafer according to claim 1 , wherein the p-type SiC epitaxial wafer is generated by a method comprising:
a step of setting an input raw material C/Si ratio, which is a ratio between C element and Si element in a feedstock gas,
a step of obtaining the p-type SiC epitaxial wafer having an Al dopant concentration of at least 1×10 18 cm −3 by forming the p-type SiC epitaxial film on a substrate in a film-forming atmosphere comprising the feedstock gas, a Cl-based gas containing Cl in the molecule, and a dopant gas containing Al and C in the molecule, and
a sub-step of setting the input raw material C/Si ratio based on a total gas C/Si ratio, being a ratio between the C element and the Si element in the film-forming atmosphere containing the C element included in the dopant gas, wherein
the input raw material C/Si ratio differs from the total gas C/Si ratio, and
the input raw material C/Si ratio is 0.8 or less.
18 . The p-type SiC epitaxial wafer according to claim 1 , wherein depth of the p-type SiC epitaxial film in a thickness direction from a surface of the SiC epitaxial film is 0.1 μm or more.
19 . The p-type SiC epitaxial wafer according to claim 1 , wherein depth of the p-type SiC epitaxial film in a thickness direction from a surface of the SiC epitaxial film is 1 μm or more.